IRFPC50LC Equivalent & Substitute Parts Reference

Part Overview

The Vishay Siliconix IRFPC50LC is an N-channel MOSFET designed for high-voltage (600 V), medium-current (11A) applications in a TO-247-3 through-hole package. It is categorized under Transistors, FETs, MOSFETs. This product is currently designated as Obsolete, which necessitates the identification of suitable alternative models for continued production, maintenance, or design-in purposes.

Key Parameters

Manufacturer Part Number	Manufacturer	Category	Description	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status
IRFPC50LC	Vishay Siliconix	Transistors, FETs, MOSFETs	MOSFET N-CH 600V 11A TO247-3	600 V	11A (Tc)	600mOhm @ 6.6A, 10V	4V @ 250µA	84 nC @ 10 V	±30V	2300 pF @ 25 V	190W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3	RoHS non-compliant

Substitute Part Grouping Explanation

Substitutes are identified strictly by matching the critical electrical and mechanical parameters of the IRFPC50LC within the Transistors, FETs, MOSFETs category. The key allowed substitution parameters are:

Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Operating Temperature
Mounting Type
Package / Case
RoHS Status

Only models matching or exceeding the required specifications and sharing the same mechanical footprint are included.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Package / Case	RoHS Status
IRFPC50LC	Vishay Siliconix	600 V	11A (Tc)	600mOhm @ 6.6A, 10V	4V @ 250µA	84 nC @ 10 V	±30V	2300 pF @ 25 V	190W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	RoHS non-compliant
APT18M80B	Microchip Technology	800 V	19A (Tc)	530mOhm @ 9A, 10V	5V @ 1mA	120 nC @ 10 V	±30V	3760 pF @ 25 V	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ROHS3 Compliant
STW10NK60Z	STMicroelectronics	600 V	10A (Tc)	750mOhm @ 4.5A, 10V	4.5V @ 250µA	70 nC @ 10 V	±30V	1370 pF @ 25 V	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ROHS3 Compliant
STW13NK60Z	STMicroelectronics	600 V	13A (Tc)	550mOhm @ 4.5A, 10V	4.5V @ 100µA	92 nC @ 10 V	±30V	2030 pF @ 25 V	150W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ROHS3 Compliant

Engineering Selection Recommendations

The IRFPC50LC is obsolete and is not RoHS compliant. Substitute parts APT18M80B, STW10NK60Z, and STW13NK60Z are Active and ROHS3 Compliant. All substitutes provided have a matching mounting type (Through Hole) and package/case (TO-247-3). Select substitutes only from this list to ensure continued supply, compliance with RoHS requirements, and compatibility with standard TO-247-3 footprints.

Frequently Asked Questions (FAQ)

Q1: What determines if a MOSFET is a suitable substitute for IRFPC50LC?
Substitution is determined strictly by matching or exceeding the key allowed parameters: Drain to Source Voltage, Continuous Drain Current, Rds On (Max), Gate Threshold Voltage, Gate Charge, Maximum Gate Voltage, Input Capacitance, Power Dissipation, Operating Temperature, Mounting Type, and Package/Case.

Q2: Do the alternatives provide equal mechanical compatibility?
All listed substitutes utilize the TO-247-3 through-hole package, supporting direct mechanical interchangeability.

Q3: Are substitute devices RoHS compliant?
All listed substitutes (APT18M80B, STW10NK60Z, STW13NK60Z) are ROHS3 Compliant.

Q4: Is input capacitance (Ciss) a relevant factor for substitution within this category?
Input capacitance (Ciss) is included in the comparison for signal response integrity; all listed substitutes specify this parameter.

Q5: What are the possible variations in electrical parameters between the IRFPC50LC and substitutes?
Electrical parameters such as drain-source voltage, current, Rds On, and gate charge differ among listed substitutes but are provided for direct engineering selection against the original specification.

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