IRFPC50A N-Channel 600V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPC50A is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 600V drain-to-source voltage with 11A continuous drain current at 25°C. Manufactured by Vishay Siliconix, this device is housed in a TO-247-3 through-hole package and dissipates up to 180W at the case temperature. The IRFPC50A is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement requirements. Active alternatives with identical or enhanced electrical characteristics are available from multiple manufacturers including IXYS and STMicroelectronics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	11	A (Tc)
On-State Resistance (Rds On) @ 6A, 10V	580	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	70	nC
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFPC50A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 11A at 25°C
Gate-Source Voltage (Vgs): Must support ±30V maximum rating
Operating Temperature Range: Must encompass -55°C to 150°C
Mounting Type: Must be through-hole configuration
Package Case: Must be TO-247-3 or compatible TO-247 variant

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide design margin
Input Capacitance (Ciss): Affects gate drive requirements

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (enhanced specifications within the same voltage and current class).

Parameter Comparison

Parameter	IRFPC50A	IRFPC50APBF	STW10NK60Z	STW13NK60Z	IXFH14N60P	IXFH23N80Q
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics	IXYS	IXYS
Product Status	Obsolete	Active	Active	Active	Active	Active
Vdss (V)	600	600	600	600	600	800
Id @ 25°C (A)	11	11	10	13	14	23
Rds On @ 10V (mOhm)	580 @ 6A	580 @ 6A	750 @ 4.5A	550 @ 4.5A	550 @ 7A	420 @ 500mA
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4.5 @ 250µA	4.5 @ 100µA	5.5 @ 2.5mA	4.5 @ 3mA
Qg @ 10V (nC)	70	70	70	92	36	130
Ciss @ 25V (pF)	2100	2100	1370	2030	2500	4900
Power Dissipation (W)	180	180	156	150	300	500
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRFPC50APBF is the direct parametric equivalent to the IRFPC50A. This part maintains identical electrical specifications including 600V Vdss, 11A continuous drain current, 580mOhm Rds On, and 180W power dissipation. The primary distinction is product status: IRFPC50APBF is active and ROHS3 compliant, whereas the IRFPC50A is obsolete and RoHS non-compliant. IRFPC50APBF is supplied in tube packaging and is suitable for direct substitution in all applications where the IRFPC50A was originally specified.

Manufacturer-Recommended Alternatives (Enhanced Performance):

STW10NK60Z (STMicroelectronics SuperMESH™ series) operates at 600V with 10A continuous drain current. This part is rated for 156W power dissipation and features 750mOhm Rds On. The STW10NK60Z is suitable for applications where the 11A current requirement can be met with 10A operation, or where thermal margin is not critical.

STW13NK60Z (STMicroelectronics SuperMESH™ series) operates at 600V with 13A continuous drain current, exceeding the IRFPC50A specification. This part is rated for 150W power dissipation and features 550mOhm Rds On, providing improved on-state performance. The STW13NK60Z is suitable for applications requiring higher current capacity or lower conduction losses.

IXFH14N60P (IXYS HiPerFET™ Polar series) operates at 600V with 14A continuous drain current and 300W power dissipation. This part features 550mOhm Rds On and 36nC gate charge, providing superior switching performance and thermal headroom. The IXFH14N60P is suitable for high-frequency switching applications and designs requiring enhanced power handling.

IXFH23N80Q (IXYS HiPerFET™ Q Class series) operates at 800V with 23A continuous drain current and 500W power dissipation. This part is suitable only for applications where the higher voltage rating is required or where significant design margin is necessary. The 800V rating makes this part unsuitable as a direct replacement in 600V-rated circuits.

All substitute parts are ROHS3 compliant and rated for -55°C to 150°C operating temperature, matching the IRFPC50A thermal envelope.

Frequently Asked Questions (FAQ)

Q: Can IRFPC50APBF be used as a direct replacement for IRFPC50A?

A: Yes. IRFPC50APBF is a parametric equivalent with identical electrical specifications. The only differences are product status (active versus obsolete) and RoHS compliance (ROHS3 versus non-compliant). Both parts are rated for 600V, 11A, 180W, and use the TO-247-3 package. IRFPC50APBF is the recommended direct replacement.

Q: What is the difference between the STW10NK60Z and STW13NK60Z?

A: Both parts are STMicroelectronics SuperMESH™ series MOSFETs rated for 600V operation. The STW10NK60Z is rated for 10A continuous drain current and 156W power dissipation. The STW13NK60Z is rated for 13A continuous drain current and 150W power dissipation. The STW13NK60Z provides higher current capacity with lower on-state resistance (550mOhm versus 750mOhm), making it suitable for applications requiring the IRFPC50A's 11A specification or higher.

Q: Why is IXFH14N60P listed as a substitute if it has different electrical characteristics?

A: IXFH14N60P is a manufacturer-recommended alternative, not a parametric equivalent. It maintains the 600V voltage rating and exceeds the 11A current requirement with 14A continuous drain current. The part features enhanced specifications including 300W power dissipation (versus 180W), lower gate charge (36nC versus 70nC), and improved on-state resistance (550mOhm). These enhancements make IXFH14N60P suitable for applications where the IRFPC50A was specified but where improved performance or thermal margin is beneficial.

Q: Can IXFH23N80Q replace IRFPC50A in a 600V circuit?

A: IXFH23N80Q is rated for 800V operation, not 600V. While the part can operate in a 600V circuit, the higher voltage rating is unnecessary for this application. IXFH23N80Q is suitable only for applications where the 800V rating is required or where significant design margin above 600V is necessary. For standard 600V applications, IRFPC50APBF, STW13NK60Z, or IXFH14N60P are more appropriate selections.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All listed substitute parts use the TO-247-3 through-hole package or compatible TO-247 variants (TO-247AC, TO-247AD). The TO-247-3 and TO-247AC packages are mechanically and electrically identical. The TO-247AD variant used by IXYS parts is mechanically compatible with TO-247-3 footprints. All parts are suitable for direct PCB mounting without package adaptation.

Q: What is the significance of RoHS compliance for substitute selection?

A: IRFPC50A is RoHS non-compliant, while all listed substitute parts are ROHS3 compliant. RoHS compliance is a regulatory requirement in many markets and is often mandated by original equipment manufacturers. If the application or end-use market requires RoHS compliance, IRFPC50APBF, STW10NK60Z, STW13NK60Z, IXFH14N60P, or IXFH23N80Q must be selected. IRFPC50A cannot be used in RoHS-regulated applications.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IRFPC50A and IRFPC50APBF both require 70nC at 10V gate drive. IXFH14N60P requires only 36nC, reducing gate drive power and enabling faster switching. STW10NK60Z and STW13NK60Z require 70nC and 92nC respectively. Lower gate charge is beneficial in high-frequency switching applications but does not affect DC operation. Gate drive circuit design must accommodate the specific Qg value of the selected part.

Q: What thermal considerations apply when substituting parts?

A: IRFPC50A is rated for 180W power dissipation at case temperature. STW10NK60Z is rated for 156W, STW13NK60Z for 150W, IXFH14N60P for 300W, and IXFH23N80Q for 500W. Parts with lower power dissipation ratings require more aggressive thermal management or lower operating power levels. Parts with higher ratings provide additional thermal margin. Thermal design must account for the specific power dissipation rating and operating conditions of the selected substitute.

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