IRFPC50 N-Channel 600V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPC50 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 600V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is designed for high-voltage switching applications requiring 180W power dissipation capability.

The IRFPC50 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with matching or superior electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	11	A (Tc)
On-State Resistance (Rds On) @ 6A, 10V	600	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	140	nC
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFPC50 is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must meet or exceed 600V to maintain circuit protection and reliability in the intended application voltage domain.

Current Rating (Id): The substitute must support at least 11A continuous drain current at 25°C to handle the design load without thermal derating.

On-State Resistance (Rds On): Lower or equivalent Rds On values ensure comparable or improved efficiency and reduced power dissipation during switching operation.

Package Type: All substitutes must use TO-247-3 or compatible TO-247 through-hole packaging to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating range to maintain performance across all environmental conditions.

Gate Charge (Qg): Similar or lower gate charge values ensure compatible drive circuit requirements and switching speed characteristics.

Substitutes are classified into two categories: Parametric Equivalents (identical electrical specifications with different product status or packaging) and Manufacturer Recommended Alternatives (enhanced or alternative specifications from different manufacturers that meet or exceed the IRFPC50 performance envelope).

Parameter Comparison

Parameter	IRFPC50	IRFPC50PBF	STW10NK60Z	STW13NK60Z	IXFH23N80Q
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics	IXYS
Vdss (V)	600	600	600	600	800
Id @ 25°C (A)	11	11	10	13	23
Rds On @ 10V (mOhm)	600 @ 6A	600 @ 6A	750 @ 4.5A	550 @ 4.5A	420 @ 500mA
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4.5 @ 250µA	4.5 @ 100µA	4.5 @ 3mA
Qg @ 10V (nC)	140	140	70	92	130
Power Dissipation (W)	180	180	156	150	500
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFPC50PBF (Vishay Siliconix): This part is the direct parametric equivalent of the IRFPC50, offering identical electrical specifications with 600V Vdss, 11A Id, and 180W power dissipation. The IRFPC50PBF is classified as Active and is ROHS3 compliant, addressing the obsolescence status of the original IRFPC50. This substitute is recommended for direct replacement in existing designs without circuit modification. Inventory availability is 1991 pieces.

STW10NK60Z (STMicroelectronics): This SuperMESH™ series device provides 600V Vdss with 10A continuous drain current, representing a 9% reduction in current rating compared to the IRFPC50. The Rds On is 750mOhm at 4.5A, which is higher than the IRFPC50 specification. Gate charge is significantly lower at 70nC, enabling faster switching response. Power dissipation is rated at 156W. This substitute is suitable for applications where the 10A current rating is sufficient and lower switching losses are beneficial. Product status is Active with ROHS3 compliance. Inventory availability is 3846 pieces.

STW13NK60Z (STMicroelectronics): This SuperMESH™ series device provides 600V Vdss with 13A continuous drain current, representing an 18% increase over the IRFPC50. The Rds On is 550mOhm at 4.5A, which is lower than the IRFPC50 specification, providing improved efficiency. Gate charge is 92nC. Power dissipation is rated at 150W. This substitute is suitable for applications requiring higher current capacity or improved on-state performance. Product status is Active with ROHS3 compliance. Inventory availability is 2765 pieces.

IXFH23N80Q (IXYS): This HiPerFET™ Q Class device provides enhanced specifications with 800V Vdss and 23A continuous drain current, representing significant improvements in voltage and current ratings. The Rds On is 420mOhm at 500mA, providing superior on-state performance. Gate charge is 130nC, comparable to the IRFPC50. Power dissipation is rated at 500W, substantially higher than the IRFPC50. This substitute is recommended for applications requiring higher voltage headroom, increased current capacity, or enhanced thermal performance. The higher voltage rating provides additional circuit protection margin. Product status is Active with ROHS3 compliance. Inventory availability is 1967 pieces.

All recommended substitutes maintain TO-247-3 through-hole packaging compatibility and support the full -55°C to 150°C operating temperature range. Selection should be based on specific application requirements for current, voltage margin, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the IRFPC50PBF be used as a direct replacement for the IRFPC50?

A: Yes. The IRFPC50PBF is a parametric equivalent with identical electrical specifications: 600V Vdss, 11A continuous drain current, 600mOhm Rds On, and 180W power dissipation. The primary difference is product status (Active versus Obsolete) and RoHS compliance (ROHS3 Compliant). No circuit modifications are required.

Q: What is the difference between the STW10NK60Z and STW13NK60Z substitutes?

A: Both devices are STMicroelectronics SuperMESH™ series MOSFETs with 600V Vdss. The STW10NK60Z provides 10A continuous drain current with 750mOhm Rds On and 70nC gate charge. The STW13NK60Z provides 13A continuous drain current with 550mOhm Rds On and 92nC gate charge. The STW13NK60Z offers higher current capacity and lower on-state resistance, while the STW10NK60Z offers lower gate charge for faster switching. Selection depends on whether the application prioritizes current capacity or switching speed.

Q: Why does the IXFH23N80Q have a higher voltage rating (800V) than the IRFPC50 (600V)?

A: The IXFH23N80Q is designed for applications requiring higher voltage margins and circuit protection. The 800V Vdss rating provides 200V additional headroom above the IRFPC50 specification. This higher voltage rating does not prevent use in 600V applications; it simply provides enhanced overvoltage protection. The IXFH23N80Q also offers significantly higher current capacity (23A versus 11A) and power dissipation (500W versus 180W), making it suitable for higher-performance applications.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All recommended substitutes use TO-247-3 or compatible TO-247 through-hole packaging. This ensures mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting arrangements. No mechanical redesign is required when substituting these parts.

Q: What is the significance of RoHS compliance for the IRFPC50 substitutes?

A: The original IRFPC50 is RoHS non-compliant. All recommended substitutes (IRFPC50PBF, STW10NK60Z, STW13NK60Z, and IXFH23N80Q) are ROHS3 compliant. This compliance is important for applications subject to RoHS regulations, particularly in consumer electronics and European markets. ROHS3 compliance ensures the parts meet current environmental and material restriction standards.

Q: Can the IRFPC50 be used in applications where the STW13NK60Z or IXFH23N80Q are specified?

A: The IRFPC50 can be used in applications designed for the STW13NK60Z if the 11A current rating is sufficient for the application load. However, the IRFPC50 cannot be used as a substitute for the IXFH23N80Q in applications requiring 800V voltage rating or 23A current capacity, as the IRFPC50 does not meet these enhanced specifications. Substitution direction is from lower to higher specifications only when the application permits.

Q: What does gate charge (Qg) represent, and why does it vary among substitutes?

A: Gate charge is the total charge required to drive the MOSFET gate from off to on state at a specified gate-source voltage (10V in these specifications). Lower gate charge enables faster switching transitions and reduces drive circuit power requirements. The STW10NK60Z has the lowest gate charge (70nC), enabling the fastest switching response. The IRFPC50 and IXFH23N80Q have comparable gate charge (140nC and 130nC respectively). Gate charge selection depends on drive circuit capabilities and switching frequency requirements.

Q: How does on-state resistance (Rds On) affect device selection?

A: On-state resistance determines power dissipation during conduction: P = I²R. Lower Rds On values reduce power loss and heat generation. The IXFH23N80Q has the lowest Rds On (420mOhm), followed by STW13NK60Z (550mOhm), IRFPC50/IRFPC50PBF (600mOhm), and STW10NK60Z (750mOhm). For applications with high continuous current or thermal constraints, lower Rds On values are preferred. For low-frequency switching applications, Rds On differences may be less critical.

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