IRFPC40 N-Channel MOSFET 600V 6.8A Equivalent & Substitute Parts

Part Overview

The IRFPC40 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 600V drain-to-source voltage with 6.8A continuous drain current at 25°C. The device is housed in a Through Hole TO-247-3 package and dissipates up to 150W at the case temperature. The IRFPC40 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Substiute Parts

IRFPC40

Vishay SiliconixIn Stock: 22239IRFPC40 Datasheet

Current PartRFQ

IRFPC40PBF

Vishay SiliconixIn Stock: 1553IRFPC40PBF Datasheet

DirectRFQ

APT11F80B

Microchip TechnologyIn Stock: 687APT11F80B Datasheet

MFR RecommendedRFQ

STW10NK60Z

STMicroelectronicsIn Stock: 3874STW10NK60Z Datasheet

MFR RecommendedRFQ

STW9N80K5

STMicroelectronicsIn Stock: 1202STW9N80K5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFPC40 is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 or compatible TO-247 variant
• Operating Temperature Range: -55°C to 150°C (TJ) minimum

Electrical Compatibility Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 600V
• Current - Continuous Drain (Id) @ 25°C: Must equal or exceed 6.8A
• Drive Voltage (Max Rds On): 10V operation
• Power Dissipation (Max): Must equal or exceed 150W (Tc)
• Gate Voltage (Vgs Max): Must accommodate ±20V minimum

Substitute parts are classified into two categories:

Direct Equivalent: Parts with identical electrical specifications and active product status (IRFPC40PBF).

Functional Equivalent: Parts with equal or superior electrical ratings that maintain circuit functionality while offering enhanced performance characteristics or improved availability (STW10NK60Z, APT11F80B, STW9N80K5).

Parameter Comparison

Engineering Selection Recommendations

IRFPC40PBF (Direct Equivalent - Recommended for Direct Replacement)

The IRFPC40PBF is the primary substitute for the obsolete IRFPC40. Both parts share identical electrical specifications: 600V Vdss, 6.8A continuous drain current, 1.2Ω Rds On at 10V gate drive, and 150W power dissipation. The IRFPC40PBF maintains the same TO-247-3 package and Through Hole mounting configuration. The critical distinction is product status: IRFPC40PBF is Active and ROHS3 Compliant, whereas the IRFPC40 is Obsolete and RoHS non-compliant. For applications requiring exact electrical and thermal performance matching, the IRFPC40PBF provides seamless compatibility with no circuit redesign required.

STW10NK60Z (Functional Equivalent - Enhanced Performance)

The STW10NK60Z from STMicroelectronics is a functional equivalent offering improved electrical performance. It maintains the 600V Vdss rating and TO-247-3 package but provides 10A continuous drain current (versus 6.8A) and 156W power dissipation (versus 150W). The Rds On is reduced to 750mΩ at 4.5A, 10V, providing lower on-state losses. This part is Active and ROHS3 Compliant. The STW10NK60Z is suitable for applications where higher current capacity and improved thermal performance are beneficial within the same voltage class.

APT11F80B (Functional Equivalent - Higher Voltage Rating)

The APT11F80B from Microchip Technology provides a higher voltage rating of 800V Vdss with 12A continuous drain current and 337W power dissipation. This part is suitable for applications requiring higher voltage headroom or increased current handling. The TO-247-3 package and Through Hole mounting are maintained. The APT11F80B is Active and ROHS3 Compliant. Selection of this part is appropriate when circuit design permits higher voltage operation and enhanced thermal margin is required.

STW9N80K5 (Functional Equivalent - Higher Voltage, Lower Current)

The STW9N80K5 from STMicroelectronics offers 800V Vdss with 7A continuous drain current and 110W power dissipation. This part is suitable for applications where voltage rating must exceed 600V but current requirements are comparable to the IRFPC40. The TO-247-3 package and Through Hole mounting are maintained. The STW9N80K5 is Active and ROHS3 Compliant. This part is appropriate when higher voltage operation is required with current demands near or below 7A.

All substitute parts are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRFPC40PBF be used as a direct replacement for the IRFPC40?

A: Yes. The IRFPC40PBF is electrically and mechanically identical to the IRFPC40. Both parts have 600V Vdss, 6.8A continuous drain current, 1.2Ω Rds On at 10V, and 150W power dissipation. The IRFPC40PBF is Active and ROHS3 Compliant, making it the preferred choice for direct substitution in new designs and production.

Q: What is the difference between the IRFPC40 and STW10NK60Z?

A: Both parts operate at 600V Vdss and use the TO-247-3 package. The STW10NK60Z provides higher continuous drain current (10A versus 6.8A), lower on-state resistance (750mΩ versus 1.2Ω at 10V), and slightly higher power dissipation (156W versus 150W). The STW10NK60Z is suitable when improved current handling and reduced losses are required within the same voltage class.

Q: Can I use the APT11F80B in place of the IRFPC40?

A: The APT11F80B is electrically compatible but operates at a higher voltage rating (800V versus 600V). It provides 12A continuous drain current and 337W power dissipation. This part is suitable for applications where higher voltage operation is acceptable and enhanced thermal performance is beneficial. Circuit design must accommodate the higher voltage rating.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: FET Type (N-Channel), Technology (MOSFET Metal Oxide), Mounting Type (Through Hole), Package (TO-247-3), Operating Temperature Range (-55°C to 150°C TJ), Drain to Source Voltage (600V minimum), Continuous Drain Current (6.8A minimum), and Power Dissipation (150W minimum). Substitute parts must meet or exceed these specifications.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (IRFPC40PBF, STW10NK60Z, APT11F80B, STW9N80K5) are ROHS3 Compliant. The original IRFPC40 is RoHS non-compliant. For applications requiring RoHS compliance, any of the substitute parts are acceptable.

Q: What is the difference between the STW10NK60Z and STW9N80K5?

A: The STW10NK60Z operates at 600V Vdss with 10A continuous drain current and 156W power dissipation. The STW9N80K5 operates at 800V Vdss with 7A continuous drain current and 110W power dissipation. Selection depends on whether the application requires 600V or 800V operation and whether current capacity or voltage headroom is the priority.

Q: Can I use a substitute part with higher power dissipation rating?

A: Yes. Parts with equal or higher power dissipation ratings are electrically compatible. Higher power dissipation ratings indicate improved thermal performance and are suitable for applications where thermal margin is beneficial. The circuit design must accommodate the electrical specifications of the substitute part.

Q: What packaging options are available for these substitute parts?

A: All substitute parts are supplied in Through Hole TO-247-3 package configuration, maintaining mechanical compatibility with the original IRFPC40. Packaging is specified as Tube for all active substitute parts.