IRFP7718PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP7718PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 195A continuous drain current at 25°C. This device is packaged in TO-247AC through-hole configuration and is designed for high-current switching applications. The part is classified as Obsolete, making identification of equivalent and substitute components essential for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating potential packaging and performance variations.

Substiute Parts

IRFP7718PBF
Infineon TechnologiesIn Stock: 25216IRFP7718PBF Datasheet
IRFP7718PBF
Current Part
IRFP4368PBF
Infineon TechnologiesIn Stock: 26524IRFP4368PBF Datasheet
IRFP4368PBF
MFR Recommended
IXTH440N055T2
IXYSIn Stock: 2151IXTH440N055T2 Datasheet
IXTH440N055T2
MFR Recommended
IXTX550N055T2
IXYSIn Stock: 1113IXTX550N055T2 Datasheet
IXTX550N055T2
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 195 A (Tc)
Rds On (Max) @ 100A, 10V 1.8 mOhm
Gate Charge (Qg) @ 10V 830 nC
Power Dissipation (Max) 517 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-247AC Through Hole
Technology MOSFET (Metal Oxide) N-Channel

Substitute Part Grouping Explanation

Substitution eligibility for the IRFP7718PBF is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Substitute parts must equal or exceed 75V
  • Continuous Drain Current (Id): Substitute parts must support minimum 195A at 25°C
  • On-State Resistance (Rds On): Substitute parts must not exceed 1.8 mOhm at rated conditions to maintain thermal performance
  • Gate Charge (Qg): Lower values reduce switching losses; higher values acceptable if within thermal budget
  • Power Dissipation: Substitute parts must support minimum 517W at case temperature
  • Package Type: Through-hole TO-247 family variants acceptable
  • Operating Temperature: Must support -55°C to 175°C range

Substitution Groups:

Group 1 - Direct Voltage/Current Match (75V, 195A): IRFP4368PBF maintains identical voltage and current ratings with comparable Rds On performance, making it a direct functional equivalent despite minor parameter variations.

Group 2 - Reduced Voltage, Increased Current (55V, 440A+): IXTH440N055T2 and IXTX550N055T2 operate at lower voltage (55V) but provide significantly higher current capacity (440A and 550A respectively). These substitutes are applicable only in circuits where the maximum operating voltage does not exceed 55V, as the lower Vdss rating creates a design constraint.

Parameter Comparison

Parameter IRFP7718PBF IRFP4368PBF IXTH440N055T2 IXTX550N055T2
Manufacturer Infineon Infineon IXYS IXYS
Vdss (V) 75 75 55 55
Id @ 25°C (A) 195 195 440 550
Rds On Max @ 10V (mOhm) 1.8 @ 100A 1.85 @ 195A 1.8 @ 100A 1.6 @ 100A
Gate Charge @ 10V (nC) 830 570 405 595
Power Dissipation Max (W) 517 520 1000 1250
Operating Temp Range (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-247AC TO-247AC TO-247 (IXTH) PLUS247-3
Product Status Obsolete Discontinued Active Active
RoHS Compliance ROHS3 ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

IRFP4368PBF Selection: The IRFP4368PBF is the primary substitute for IRFP7718PBF applications. Both devices are manufactured by Infineon Technologies and maintain identical voltage (75V) and current (195A) ratings. The IRFP4368PBF exhibits marginally higher Rds On (1.85 mOhm vs. 1.8 mOhm) and lower gate charge (570 nC vs. 830 nC), resulting in reduced switching losses. Power dissipation capability is equivalent (520W vs. 517W). Both parts comply with ROHS3 and maintain unlimited moisture sensitivity level (MSL 1). The IRFP4368PBF is packaged in TO-247AC, ensuring mechanical and thermal compatibility. This part is suitable for direct replacement in existing designs without circuit modification.

IXTH440N055T2 and IXTX550N055T2 Selection: These IXYS devices operate at reduced voltage rating (55V vs. 75V) and are applicable only in applications where maximum circuit voltage does not exceed 55V. The IXTH440N055T2 provides 440A continuous current with 1.8 mOhm Rds On and 1000W power dissipation. The IXTX550N055T2 provides 550A continuous current with superior 1.6 mOhm Rds On and 1250W power dissipation. Both devices feature lower gate charge (405 nC and 595 nC respectively) compared to IRFP7718PBF, reducing switching losses. Both are Active products with ROHS3 compliance. Selection between these two depends on current requirement and thermal management capability. The IXTX550N055T2 offers superior on-state resistance and power handling but operates in PLUS247-3 package variant rather than standard TO-247AC.

Compliance and Availability: All substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility. IRFP4368PBF and IXYS devices are currently in stock with substantial inventory levels (26,494 and 2,100+ units respectively), supporting procurement continuity for the obsolete IRFP7718PBF.

Frequently Asked Questions (FAQ)

Q: Can IRFP4368PBF directly replace IRFP7718PBF without circuit modification?

A: Yes. Both devices maintain identical voltage (75V) and current (195A) ratings, equivalent power dissipation (520W vs. 517W), and identical package type (TO-247AC). The IRFP4368PBF exhibits lower gate charge (570 nC vs. 830 nC), which reduces switching losses and may improve circuit efficiency. No design changes are required.

Q: What is the key limitation when using IXTH440N055T2 or IXTX550N055T2 as substitutes?

A: Both IXYS devices are rated for maximum 55V drain-to-source voltage, compared to 75V for IRFP7718PBF. These substitutes are applicable only in circuits where the maximum operating voltage does not exceed 55V. If the circuit design requires 75V capability, these parts are not suitable.

Q: Why does IRFP4368PBF have lower gate charge than IRFP7718PBF?

A: Gate charge (Qg) is a device-specific parameter determined by internal semiconductor structure and is not directly related to voltage or current rating. The lower gate charge (570 nC vs. 830 nC) in IRFP4368PBF results in reduced switching losses and faster switching transitions, which may improve overall circuit performance.

Q: Are the IXYS devices (IXTH440N055T2 and IXTX550N055T2) pin-compatible with IRFP7718PBF?

A: Both IXYS devices use TO-247 family packaging (IXTH and PLUS247-3 variants respectively), which maintains the same three-pin configuration (Gate, Drain, Source) as TO-247AC. Pin assignment is identical, ensuring mechanical compatibility. However, the voltage rating difference (55V vs. 75V) must be verified for circuit compatibility before substitution.

Q: What is the difference between IXTH440N055T2 and IXTX550N055T2?

A: Both are IXYS TrenchT2™ technology devices rated for 55V. The IXTH440N055T2 provides 440A continuous current with 1.8 mOhm Rds On and 1000W power dissipation. The IXTX550N055T2 provides higher 550A continuous current with superior 1.6 mOhm Rds On and 1250W power dissipation. The IXTX550N055T2 offers better on-state performance and thermal capability but operates in PLUS247-3 package rather than standard TO-247.

Q: Are all substitute parts RoHS compliant?

A: Yes. IRFP4368PBF, IXTH440N055T2, and IXTX550N055T2 all comply with ROHS3 standards and are REACH unaffected, ensuring regulatory compatibility with current environmental requirements.

Q: Which substitute part should be selected for new designs?

A: For applications requiring 75V capability, IRFP4368PBF is the recommended substitute, offering direct electrical and mechanical compatibility with IRFP7718PBF. For applications limited to 55V maximum voltage, IXTX550N055T2 is preferred due to superior on-state resistance (1.6 mOhm) and higher power dissipation capability (1250W), providing better thermal performance and efficiency.

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