IRFP470 N-Channel 500V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP470 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 500V drain-to-source voltage and 24A continuous drain current at 25°C. The device is housed in a TO-247AD through-hole package and is rated for 300W maximum power dissipation. The IRFP470 is classified as obsolete, necessitating identification of functionally equivalent substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-247-3 package standard.

Substiute Parts

IRFP470

IXYSIn Stock: 2424IRFP470 Datasheet

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STW19NM50N

STMicroelectronicsIn Stock: 2492STW19NM50N Datasheet

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STW20NM50FD

STMicroelectronicsIn Stock: 6567STW20NM50FD Datasheet

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STW26NM50

STMicroelectronicsIn Stock: 21698STW26NM50 Datasheet

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STW28NM50N

STMicroelectronicsIn Stock: 15231STW28NM50N Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFP470 are selected based on strict electrical and mechanical compatibility criteria. All substitute devices must satisfy the following requirements:

Mandatory Compatibility Parameters:

• Drain-to-Source Voltage (Vdss): 500V minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package: TO-247-3 through-hole configuration
• Mounting Type: Through Hole

Performance Consideration Parameters:

• Continuous Drain Current (Id) @ 25°C: 14A or greater
• On-State Resistance (Rds On): Measured at specified gate voltage (10V)
• Gate Charge (Qg): Lower values indicate faster switching characteristics
• Power Dissipation (Max): Thermal capability at case temperature

The substitute parts identified—STW19NM50N, STW20NM50FD, STW26NM50, and STW28NM50N—all meet the mandatory electrical and mechanical criteria. These devices are manufactured by STMicroelectronics and are available in active or not-for-new-designs status, providing viable alternatives to the obsolete IRFP470.

Parameter Comparison

Engineering Selection Recommendations

STW28NM50N is the primary recommended substitute for the IRFP470. This device is manufactured by STMicroelectronics and carries Active product status, ensuring long-term availability and supply chain stability. The STW28NM50N provides 21A continuous drain current, which approaches the IRFP470 specification of 24A. The on-state resistance of 158 mOhm at 10.5A and 10V gate voltage is comparable to the IRFP470 at 230 mOhm, with improved performance characteristics. Gate charge of 50 nC indicates faster switching response than the IRFP470. The device is ROHS3 compliant and rated for 150W power dissipation. The TO-247-3 package provides direct mechanical compatibility.

STW20NM50FD serves as an alternative substitute with Active product status. This device delivers 20A continuous drain current and 214W power dissipation, providing adequate thermal headroom for applications requiring moderate power levels. The on-state resistance of 250 mOhm and gate charge of 53 nC are within acceptable ranges for general switching applications. ROHS3 compliance and active manufacturing status support long-term design viability.

STW26NM50 is suitable for applications requiring higher current capacity. This device provides 30A continuous drain current and 313W power dissipation, exceeding the IRFP470 specifications. The on-state resistance of 120 mOhm represents superior performance. However, this part carries Not For New Designs status, limiting its suitability for new product development despite its technical capabilities.

STW19NM50N is not recommended as a primary substitute due to its 14A continuous drain current rating, which falls below the IRFP470 specification of 24A. This device is suitable only for applications where current requirements do not exceed 14A.

Frequently Asked Questions (FAQ)

Q: Can the STW28NM50N directly replace the IRFP470 in existing designs?

A: The STW28NM50N is electrically compatible with the IRFP470 across all mandatory parameters: 500V Vdss, N-Channel MOSFET technology, and TO-247-3 package configuration. The 21A continuous drain current specification is within acceptable range for most applications designed for 24A operation. Pin configuration and package dimensions are identical. No circuit modifications are required for direct substitution.

Q: What is the significance of the on-state resistance (Rds On) differences between the IRFP470 and substitute parts?

A: On-state resistance directly affects power dissipation and thermal performance. The IRFP470 specifies 230 mOhm at 12A and 10V. The STW28NM50N specifies 158 mOhm at 10.5A and 10V, indicating lower conduction losses. The STW26NM50 specifies 120 mOhm at 13A and 10V, providing superior efficiency. Lower Rds On values reduce heat generation and improve overall circuit efficiency. Selection depends on thermal budget and power dissipation requirements of the specific application.

Q: Why is gate charge (Qg) important for substitute selection?

A: Gate charge determines the energy required to switch the MOSFET and influences switching speed. The IRFP470 specifies 190 nC at 10V. Substitute parts exhibit lower gate charge values: STW19NM50N at 34 nC, STW20NM50FD at 53 nC, STW28NM50N at 50 nC, and STW26NM50 at 106 nC. Lower gate charge enables faster switching transitions, reducing switching losses and allowing higher frequency operation. Applications with stringent switching speed requirements benefit from lower Qg specifications.

Q: What does "Not For New Designs" status mean for the STW26NM50?

A: Not For New Designs status indicates that STMicroelectronics has designated this part for legacy support only. While the device remains available and functional, the manufacturer does not recommend its use in new product development. Existing designs utilizing this part may continue to receive supply support, but new designs should prioritize Active status parts such as STW28NM50N or STW20NM50FD to ensure long-term availability and manufacturing continuity.

Q: Are all substitute parts RoHS compliant?

A: All identified substitute parts—STW19NM50N, STW20NM50FD, STW26NM50, and STW28NM50N—carry ROHS3 compliance certification. This ensures compatibility with environmental regulations and procurement requirements mandating lead-free and restricted substance compliance. The original IRFP470 does not specify RoHS status in the provided documentation.

Q: Can the STW26NM50 be used in applications requiring 24A continuous current?

A: Yes. The STW26NM50 provides 30A continuous drain current at 25°C, exceeding the IRFP470 specification of 24A. This device is suitable for applications requiring 24A operation. However, the Not For New Designs status limits its recommendation for new product development. For new designs, STW28NM50N (21A) or STW20NM50FD (20A) are preferred alternatives with Active product status.

Q: What package considerations apply to these substitute parts?

A: All substitute parts utilize the TO-247-3 through-hole package, identical to the IRFP470 TO-247AD configuration. Pin assignments, lead spacing, and mounting hole dimensions are compatible. No PCB layout modifications are required for direct substitution. All devices are rated for through-hole soldering and mounting on standard PCB configurations.