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IRFP460P N-Channel 500V 20A MOSFET Equivalent & Substitute Parts
Part Overview
The IRFP460P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage and 20A continuous drain current at 25°C. Manufactured by Vishay Siliconix, this device is packaged in a TO-247-3 through-hole configuration and is classified as obsolete. The IRFP460P operates across a temperature range of -55°C to 150°C (junction temperature).
Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Suitable alternatives maintain the core electrical specifications while offering improved availability and compliance certifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 20 | A |
| On-State Resistance (Rds On) @ 12A, 10V | 270 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 210 | nC |
| Input Capacitance (Ciss) @ 25V | 4200 | pF |
| Operating Temperature Range (TJ) | -55 to 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-247-3 | — |
Substitute Part Grouping Explanation
Substitution of the IRFP460P is determined by the following critical parameters:
Mandatory Matching Criteria:
- FET Type: N-Channel
- Drain-to-Source Voltage (Vdss): 500V minimum
- Package / Case: TO-247-3 (through-hole mounting)
- Operating Temperature Range: -55°C to 150°C (TJ)
Performance Alignment Criteria:
- Continuous Drain Current (Id) @ 25°C: 20A or greater
- On-State Resistance (Rds On): 270 mOhm or lower (at comparable gate voltage and current)
- Gate Threshold Voltage (Vgs(th)): Within ±0.5V of 4V
- Gate Charge (Qg): Lower values indicate improved switching performance
Substitute parts are grouped into two categories:
Category 1: Direct Equivalents (Same Vdss Rating) Parts maintaining the 500V Vdss specification with comparable or superior electrical characteristics. These include IRFP460LC (Vishay Siliconix), STW19NM50N (STMicroelectronics), STW14NK50Z (STMicroelectronics), and STW20NK50Z (STMicroelectronics).
Category 2: Higher Voltage Rated Alternatives (Vdss > 500V) Parts with elevated voltage ratings that operate within the 500V application envelope. SPW20N60C3FKSA1 (Infineon Technologies) is rated for 650V and provides additional design margin.
Category 3: Lower Current Rated Alternatives (Id < 20A) Parts with reduced current ratings suitable for applications not requiring the full 20A specification. IPW50R250CPFKSA1 (Infineon Technologies) is rated for 13A and offers superior on-state resistance and lower gate charge.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|
| IRFP460P | Vishay Siliconix | 500 | 20 | 270 @ 12A, 10V | 4 @ 250µA | 210 @ 10V | 4200 @ 25V | TO-247-3 | Obsolete |
| IRFP460LC | Vishay Siliconix | 500 | 20 | 270 @ 12A, 10V | 4 @ 250µA | 120 @ 10V | 3600 @ 25V | TO-247-3 | Active |
| IPW50R250CPFKSA1 | Infineon Technologies | 500 | 13 | 250 @ 7.8A, 10V | 3.5 @ 520µA | 36 @ 10V | 1420 @ 100V | TO-247-3 | Active |
| SPW20N60C3FKSA1 | Infineon Technologies | 650 | 20.7 | 190 @ 13.1A, 10V | 3.9 @ 1mA | 114 @ 10V | 2400 @ 25V | TO-247-3 | Active |
| STW14NK50Z | STMicroelectronics | 500 | 14 | 380 @ 6A, 10V | 4.5 @ 100µA | 92 @ 10V | 2000 @ 25V | TO-247-3 | Active |
| STW19NM50N | STMicroelectronics | 500 | 14 | 250 @ 7A, 10V | 4 @ 250µA | 34 @ 10V | 1000 @ 50V | TO-247-3 | Active |
| STW20NK50Z | STMicroelectronics | 500 | 17 | 270 @ 8.5A, 10V | 4.5 @ 100µA | 119 @ 10V | 2600 @ 25V | TO-247-3 | Active |
Engineering Selection Recommendations
Primary Recommendation: IRFP460LC
The IRFP460LC is the direct successor to the IRFP460P from the same manufacturer (Vishay Siliconix). It maintains identical electrical specifications for Vdss (500V), Id (20A), and Rds On (270 mOhm). The IRFP460LC offers improved gate charge characteristics (120 nC versus 210 nC) and lower input capacitance (3600 pF versus 4200 pF), resulting in faster switching performance. Product status is active with robust inventory availability (2250 units). RoHS non-compliance status is identical to the original part.
Secondary Recommendation: SPW20N60C3FKSA1
The SPW20N60C3FKSA1 (Infineon Technologies CoolMOS™ series) provides superior electrical performance with lower on-state resistance (190 mOhm versus 270 mOhm) and significantly reduced gate charge (114 nC versus 210 nC). The 650V Vdss rating provides additional design margin for 500V applications. This device is RoHS3 compliant and carries active product status. Inventory availability is excellent (2888 units). The higher voltage rating introduces no compatibility issues for 500V-rated circuits.
Alternative for Current-Limited Applications: IPW50R250CPFKSA1
The IPW50R250CPFKSA1 (Infineon Technologies CoolMOS™ series) is suitable for applications where continuous drain current does not exceed 13A. This device delivers exceptional performance metrics: on-state resistance of 250 mOhm, gate charge of only 36 nC, and input capacitance of 1420 pF. RoHS3 compliance and active product status are confirmed. This part is optimal for designs prioritizing switching efficiency and thermal management over maximum current capacity.
Alternative for Current-Matched Applications: STW20NK50Z
The STW20NK50Z (STMicroelectronics SuperMESH™ series) matches the IRFP460P in continuous drain current (17A, approaching 20A specification). On-state resistance is identical at 270 mOhm. Gate charge (119 nC) and input capacitance (2600 pF) represent moderate improvements. RoHS3 compliance and active product status are confirmed with high inventory availability (7794 units).
Lower-Current Alternative: STW19NM50N
The STW19NM50N (STMicroelectronics MDmesh™ II series) is rated for 14A continuous drain current and delivers superior switching characteristics with gate charge of 34 nC and input capacitance of 1000 pF. On-state resistance is 250 mOhm. RoHS3 compliance and active product status are confirmed. This device is suitable for applications where 14A current capacity is sufficient.
Frequently Asked Questions (FAQ)
Q: Can the IRFP460LC be used as a direct replacement for the IRFP460P?
A: Yes. The IRFP460LC maintains identical Vdss (500V), Id (20A), and Rds On (270 mOhm @ 12A, 10V) specifications. Both devices use the TO-247-3 package and operate across -55°C to 150°C. The IRFP460LC offers improved switching performance through lower gate charge and input capacitance. It is the recommended direct equivalent.
Q: What is the primary advantage of the SPW20N60C3FKSA1 over the IRFP460P?
A: The SPW20N60C3FKSA1 provides lower on-state resistance (190 mOhm versus 270 mOhm) and significantly reduced gate charge (114 nC versus 210 nC), resulting in lower conduction losses and faster switching. The 650V Vdss rating provides additional voltage margin. RoHS3 compliance is achieved. These characteristics make it suitable for high-efficiency power conversion applications.
Q: Can I use the IPW50R250CPFKSA1 in a circuit designed for 20A continuous current?
A: No. The IPW50R250CPFKSA1 is rated for 13A continuous drain current at 25°C. Using this device in a 20A application would exceed its current rating and cause thermal stress and potential failure. This device is suitable only for applications where continuous current does not exceed 13A.
Q: Are all substitute parts RoHS compliant?
A: No. The IRFP460P and IRFP460LC are RoHS non-compliant. The IPW50R250CPFKSA1, SPW20N60C3FKSA1, STW14NK50Z, STW19NM50N, and STW20NK50Z are all RoHS3 compliant. If RoHS compliance is required, select from the active, RoHS3-compliant alternatives.
Q: Do all substitute parts use the same TO-247-3 package?
A: Yes. All substitute parts listed use the TO-247-3 through-hole package. Physical mounting and thermal interface characteristics are compatible with the original IRFP460P footprint.
Q: What is the difference between gate charge specifications for these devices?
A: Gate charge (Qg) represents the total charge required to switch the device from off to on state. Lower gate charge values indicate faster switching transitions and reduced switching losses. The IRFP460P requires 210 nC, while the IRFP460LC requires 120 nC, and the IPW50R250CPFKSA1 requires only 36 nC. Lower gate charge is advantageous in high-frequency switching applications.
Q: Can I use a higher voltage-rated device (650V) in a 500V application?
A: Yes. The SPW20N60C3FKSA1 is rated for 650V Vdss and operates safely in 500V applications. The higher voltage rating provides additional design margin and does not introduce compatibility issues. All other electrical parameters remain valid for the 500V operating envelope.
Q: Which substitute part offers the best overall performance?
A: Performance depends on application requirements. For maximum current capacity with improved efficiency, the SPW20N60C3FKSA1 is optimal. For switching speed and minimal gate charge, the IPW50R250CPFKSA1 excels. For direct current-matched replacement, the STW20NK50Z is suitable. For balanced performance across all metrics, the IRFP460LC is recommended.
Q: What is the operating temperature range for all substitute parts?
A: All substitute parts operate across -55°C to 150°C junction temperature (TJ), matching the IRFP460P specification. This ensures thermal compatibility in existing designs.
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