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IRFP460LC MOSFET Equivalent & Substitute Parts
Part Overview
The IRFP460LC is an N-Channel power MOSFET from Vishay Siliconix, categorized under Transistors, FETs, MOSFETs. It offers 500 V drain-to-source voltage, 20A continuous drain current at 25°C, and a maximum 280W power dissipation in a through-hole TO-247-3 package. The part is RoHS non-compliant. Identifying equivalent and substitute models is essential for procurement flexibility, compliance considerations, and supply chain continuity.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 280W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitute MOSFET models for the IRFP460LC are selected based strictly on the required electrical and mechanical parameters:
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V minimum
- Continuous Drain Current (Id): ≥14A (or as specified)
- Rds On (maximum and test conditions)
- Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg) (maximum)
- Input Capacitance (Ciss) (maximum)
- Power Dissipation (maximum)
- Maximum Gate-Source Voltage (Vgs max)
- Mounting Type and Package/Case: Through Hole, TO-247-3 or TO-247AC
- Compliance and MSL as per provided data
Only parts meeting or exceeding these parameters under specified conditions and packages are included.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vdss | Id (25°C) | Rds(on) | Vgs(th) (Max) @ Id | Qg (Max) @ Vgs | Vgs (Max) | Ciss (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Package / Case | RoHS Status | MSL |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFP460LC | Vishay Siliconix | 500 V | 20A (Tc) | 270mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3600 pF @ 25 V | 280W (Tc) | -55°C ~ 150°C | TO-247-3 | RoHS non-compliant | 1 |
| IRFP460LCPBF | Vishay Siliconix | 500 V | 20A (Tc) | 270mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3600 pF @ 25 V | 280W (Tc) | -55°C ~ 150°C | TO-247-3 | ROHS3 Compliant | 1 |
| APT24F50B | Microchip Technology | 500 V | 24A (Tc) | 240mOhm @ 11A, 10V | 5V @ 1mA | 90 nC @ 10 V | ±30V | 3630 pF @ 25 V | 335W (Tc) | -55°C ~ 150°C | TO-247-3 | ROHS3 Compliant | 1 |
| SPW20N60C3FKSA1 | Infineon Technologies | 650 V | 20.7A (Tc) | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | 208W (Tc) | -55°C ~ 150°C | TO-247-3 | ROHS3 Compliant | 1 |
| STW14NK50Z | STMicroelectronics | 500 V | 14A (Tc) | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92 nC @ 10 V | ±30V | 2000 pF @ 25 V | 150W (Tc) | -55°C ~ 150°C | TO-247-3 | ROHS3 Compliant | 1 |
| STW19NM50N | STMicroelectronics | 500 V | 14A (Tc) | 250mOhm @ 7A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±25V | 1000 pF @ 50 V | 110W (Tc) | 150°C | TO-247-3 | ROHS3 Compliant | 1 |
| STW20NK50Z | STMicroelectronics | 500 V | 17A (Tc) | 270mOhm @ 8.5A, 10V | 4.5V @ 100µA | 119 nC @ 10 V | ±30V | 2600 pF @ 25 V | 190W (Tc) | 150°C | TO-247-3 | ROHS3 Compliant | 1 |
Engineering Selection Recommendations
Substitute MOSFETs such as IRFP460LCPBF, APT24F50B, SPW20N60C3FKSA1, STW14NK50Z, STW19NM50N, and STW20NK50Z are all listed as active, RoHS3 compliant, and MSL 1. The IRFP460LCPBF closely matches the IRFP460LC in electrical and mechanical parameters and includes RoHS3 compliance. Alternative models from other manufacturers maintain active status and compliance, supporting selection where RoHS status or supply continuity is required.
Frequently Asked Questions (FAQ)
Q1: What are the key parameters when selecting a substitute for IRFP460LC?
A1: Substitute selection is based on FET type, technology, maximum drain-to-source voltage, continuous drain current, Rds(on) under specified test conditions, Vgs(th), gate charge, maximum Vgs, input capacitance, power dissipation, mounting style, package, and RoHS compliance.
Q2: Why might a compliant substitute be necessary?
A2: RoHS compliance may be required for specific markets or applications. IRFP460LCPBF and other substitutes are RoHS3 compliant, whereas IRFP460LC is RoHS non-compliant.
Q3: What package requirements must substitutes meet?
A3: All substitutes listed use a through-hole TO-247-3 (or TO-247AC), matching the IRFP460LC for mechanical compatibility.
Q4: Can I use a higher voltage (Vdss) substitute like SPW20N60C3FKSA1?
A4: Provided the voltage and current ratings meet or exceed the main part, such devices are categorized as suitable equivalents by the electrical parameter selection rules.
Q5: Are there substitutes with improved Rds(on) or higher continuous current?
A5: Some substitutes, such as APT24F50B, offer lower Rds(on) or higher Id ratings while fitting the package and parameter requirements.
Q6: Are all substitutes suitable for high-volume automated assembly?
A6: All listed parts have MSL 1 (Unlimited) and are through-hole packages, supporting storage and assembly requirements comparable to the IRFP460LC.
Q7: Is there full electrical compatibility between the IRFP460LC and all listed substitutes?
A7: All substitutes conform to or exceed the specified key electrical parameters provided in the input.
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