IRFP460LC MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP460LC is an N-Channel power MOSFET from Vishay Siliconix, categorized under Transistors, FETs, MOSFETs. It offers 500 V drain-to-source voltage, 20A continuous drain current at 25°C, and a maximum 280W power dissipation in a through-hole TO-247-3 package. The part is RoHS non-compliant. Identifying equivalent and substitute models is essential for procurement flexibility, compliance considerations, and supply chain continuity.

Substiute Parts

IRFP460LC
Vishay SiliconixIn Stock: 2305IRFP460LC Datasheet
IRFP460LC
Current Part
IRFP460LCPBF
Vishay SiliconixIn Stock: 1761IRFP460LCPBF Datasheet
IRFP460LCPBF
Parametric Equivalent
APT24F50B
Microchip TechnologyIn Stock: 1002APT24F50B Datasheet
APT24F50B
MFR Recommended
SPW20N60C3FKSA1
Infineon TechnologiesIn Stock: 2967SPW20N60C3FKSA1 Datasheet
SPW20N60C3FKSA1
MFR Recommended
STW14NK50Z
STMicroelectronicsIn Stock: 5526STW14NK50Z Datasheet
STW14NK50Z
MFR Recommended
STW19NM50N
STMicroelectronicsIn Stock: 2492STW19NM50N Datasheet
STW19NM50N
MFR Recommended
STW20NK50Z
STMicroelectronicsIn Stock: 7836STW20NK50Z Datasheet
STW20NK50Z
MFR Recommended

Key Parameters

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
Power Dissipation (Max)280W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3
RoHS StatusRoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Substitute Part Grouping Explanation

Substitute MOSFET models for the IRFP460LC are selected based strictly on the required electrical and mechanical parameters:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V minimum
  • Continuous Drain Current (Id): ≥14A (or as specified)
  • Rds On (maximum and test conditions)
  • Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg) (maximum)
  • Input Capacitance (Ciss) (maximum)
  • Power Dissipation (maximum)
  • Maximum Gate-Source Voltage (Vgs max)
  • Mounting Type and Package/Case: Through Hole, TO-247-3 or TO-247AC
  • Compliance and MSL as per provided data

Only parts meeting or exceeding these parameters under specified conditions and packages are included.

Parameter Comparison

Manufacturer Part Number Manufacturer Vdss Id (25°C) Rds(on) Vgs(th) (Max) @ Id Qg (Max) @ Vgs Vgs (Max) Ciss (Max) @ Vds Power Dissipation (Max) Operating Temperature Package / Case RoHS Status MSL
IRFP460LC Vishay Siliconix 500 V 20A (Tc) 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V 280W (Tc) -55°C ~ 150°C TO-247-3 RoHS non-compliant 1
IRFP460LCPBF Vishay Siliconix 500 V 20A (Tc) 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V 280W (Tc) -55°C ~ 150°C TO-247-3 ROHS3 Compliant 1
APT24F50B Microchip Technology 500 V 24A (Tc) 240mOhm @ 11A, 10V 5V @ 1mA 90 nC @ 10 V ±30V 3630 pF @ 25 V 335W (Tc) -55°C ~ 150°C TO-247-3 ROHS3 Compliant 1
SPW20N60C3FKSA1 Infineon Technologies 650 V 20.7A (Tc) 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V 208W (Tc) -55°C ~ 150°C TO-247-3 ROHS3 Compliant 1
STW14NK50Z STMicroelectronics 500 V 14A (Tc) 380mOhm @ 6A, 10V 4.5V @ 100µA 92 nC @ 10 V ±30V 2000 pF @ 25 V 150W (Tc) -55°C ~ 150°C TO-247-3 ROHS3 Compliant 1
STW19NM50N STMicroelectronics 500 V 14A (Tc) 250mOhm @ 7A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1000 pF @ 50 V 110W (Tc) 150°C TO-247-3 ROHS3 Compliant 1
STW20NK50Z STMicroelectronics 500 V 17A (Tc) 270mOhm @ 8.5A, 10V 4.5V @ 100µA 119 nC @ 10 V ±30V 2600 pF @ 25 V 190W (Tc) 150°C TO-247-3 ROHS3 Compliant 1

Engineering Selection Recommendations

Substitute MOSFETs such as IRFP460LCPBF, APT24F50B, SPW20N60C3FKSA1, STW14NK50Z, STW19NM50N, and STW20NK50Z are all listed as active, RoHS3 compliant, and MSL 1. The IRFP460LCPBF closely matches the IRFP460LC in electrical and mechanical parameters and includes RoHS3 compliance. Alternative models from other manufacturers maintain active status and compliance, supporting selection where RoHS status or supply continuity is required.

Frequently Asked Questions (FAQ)

Q1: What are the key parameters when selecting a substitute for IRFP460LC?
A1: Substitute selection is based on FET type, technology, maximum drain-to-source voltage, continuous drain current, Rds(on) under specified test conditions, Vgs(th), gate charge, maximum Vgs, input capacitance, power dissipation, mounting style, package, and RoHS compliance.

Q2: Why might a compliant substitute be necessary?
A2: RoHS compliance may be required for specific markets or applications. IRFP460LCPBF and other substitutes are RoHS3 compliant, whereas IRFP460LC is RoHS non-compliant.

Q3: What package requirements must substitutes meet?
A3: All substitutes listed use a through-hole TO-247-3 (or TO-247AC), matching the IRFP460LC for mechanical compatibility.

Q4: Can I use a higher voltage (Vdss) substitute like SPW20N60C3FKSA1?
A4: Provided the voltage and current ratings meet or exceed the main part, such devices are categorized as suitable equivalents by the electrical parameter selection rules.

Q5: Are there substitutes with improved Rds(on) or higher continuous current?
A5: Some substitutes, such as APT24F50B, offer lower Rds(on) or higher Id ratings while fitting the package and parameter requirements.

Q6: Are all substitutes suitable for high-volume automated assembly?
A6: All listed parts have MSL 1 (Unlimited) and are through-hole packages, supporting storage and assembly requirements comparable to the IRFP460LC.

Q7: Is there full electrical compatibility between the IRFP460LC and all listed substitutes?
A7: All substitutes conform to or exceed the specified key electrical parameters provided in the input.

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