IRFP460C N-Channel 500V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP460C is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage and 20A continuous drain current. Manufactured by onsemi, this device is housed in a TO-3P through-hole package and is designed for high-voltage switching applications. The IRFP460C is classified as obsolete, making identification of functionally equivalent substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-3P package format.

Substiute Parts

IRFP460C

onsemiIn Stock: 3926IRFP460C Datasheet

Current PartRFQ

2SK1518-E

Renesas Electronics CorporationIn Stock: 20392SK1518-E Datasheet

SimilarRFQ

FDA20N50-F109

onsemiIn Stock: 1217FDA20N50-F109 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFP460C is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 20A at 25°C
• Package Type: Must be TO-3P or compatible through-hole variant (TO-3PN acceptable)
• Gate Voltage Rating (Vgs): Must support ±30V maximum
• Operating Temperature Range: Must encompass -55°C to 150°C

Secondary Compatibility Parameters:

• On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 240mOhm @ 10A, 10V are preferred
• Gate Charge (Qg): Lower values reduce switching losses; values at or below 170nC @ 10V are preferred
• Input Capacitance (Ciss): Lower values reduce gate drive requirements; values at or below 6000pF @ 25V are preferred
• Power Dissipation: Higher ratings provide thermal margin; values at or above 235W are preferred

The identified substitute parts meet or exceed the primary criteria and maintain compatibility with the original IRFP460C electrical specifications and through-hole package requirements.

Parameter Comparison

Engineering Selection Recommendations

2SK1518-E (Renesas Electronics Corporation)

The 2SK1518-E is an active product that meets the primary substitution criteria for voltage (500V) and current (20A) ratings. This device is ROHS3 compliant and carries REACH Affected status. The 2SK1518-E exhibits lower input capacitance (3050pF @ 10V) compared to the IRFP460C, reducing gate drive circuit complexity. However, the on-state resistance is higher at 270mOhm, and power dissipation is limited to 120W, which may restrict thermal performance in high-power applications. The 2SK1518-E is suitable for applications where active product availability and regulatory compliance are prioritized over maximum thermal headroom.

FDA20N50-F109 (onsemi)

The FDA20N50-F109 is an obsolete product that exceeds the primary substitution criteria with 22A continuous drain current and 280W power dissipation. This device features superior on-state resistance (230mOhm @ 11A, 10V) and significantly lower gate charge (59.5nC @ 10V), resulting in reduced switching losses and improved efficiency. The FDA20N50-F109 is housed in a TO-3PN package, which is mechanically compatible with TO-3P mounting. ROHS3 compliance and REACH Unaffected status are provided. The FDA20N50-F109 is recommended for applications requiring maximum thermal performance and switching efficiency, with the understanding that it shares obsolete status with the IRFP460C.

Frequently Asked Questions (FAQ)

Q: Can the 2SK1518-E directly replace the IRFP460C in all applications?

A: The 2SK1518-E meets the voltage and current specifications of the IRFP460C and uses the same TO-3P package. However, the reduced power dissipation rating (120W versus 235W) and higher on-state resistance (270mOhm versus 240mOhm) may limit performance in high-power or thermally constrained designs. Circuit thermal analysis is required to confirm suitability.

Q: What is the difference between TO-3P and TO-3PN packages?

A: Both TO-3P and TO-3PN are through-hole packages with identical pin configurations and mechanical mounting interfaces. The TO-3PN designation indicates a variant with enhanced thermal characteristics. The FDA20N50-F109 in TO-3PN package is mechanically compatible with TO-3P mounting locations.

Q: Why does the FDA20N50-F109 have lower gate charge than the IRFP460C?

A: Gate charge is a device-specific parameter determined by the internal semiconductor structure and gate oxide characteristics. The FDA20N50-F109 exhibits lower gate charge (59.5nC) due to its optimized internal design, which reduces switching losses and gate drive power requirements compared to the IRFP460C (170nC).

Q: Is the 2SK1518-E suitable for high-temperature applications?

A: The 2SK1518-E operating temperature range extends to 150°C, matching the IRFP460C upper limit. However, the specified maximum operating temperature does not include the lower limit (-55°C), which may restrict use in extreme cold environments. Verify application temperature requirements against the -55°C to 150°C range of the IRFP460C.

Q: What does ROHS3 compliance mean for the 2SK1518-E and FDA20N50-F109?

A: ROHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive 3, which restricts the use of specific hazardous materials in electrical and electronic equipment. Both substitute parts meet this regulatory requirement, supporting use in applications with ROHS compliance mandates.

Q: Can both substitute parts be used interchangeably in the same circuit?

A: Both the 2SK1518-E and FDA20N50-F109 meet the primary electrical specifications and use compatible through-hole packages. However, differences in on-state resistance, gate charge, and power dissipation require circuit-level evaluation. The FDA20N50-F109 is preferred for high-power applications, while the 2SK1518-E is suitable for standard-power designs with active product availability requirements.