IRFP460A N-Channel 500V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP460A is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage with 20A continuous drain current at 25°C. Manufactured by Vishay Siliconix, this device is housed in a TO-247-3 through-hole package and dissipates up to 280W at the case temperature. The IRFP460A is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Resistance (Rds On) @ 12A, 10V	270	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	105	nC
Power Dissipation (Max)	280	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IRFP460A is determined by the following critical parameters:

Primary Electrical Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 500V
Continuous Drain Current (Id) must equal or exceed 20A at 25°C
On-State Resistance (Rds On) must not significantly exceed 270mOhm to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must encompass -55°C to 150°C

Mechanical Criteria:

Mounting type must be through-hole
Package must be TO-247-3 or compatible variant (TO-247AC, TO-247AD, TO-247 [B])

Compliance Criteria:

RoHS3 compliance preferred for new designs
REACH unaffected status required

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical specifications and packaging) and Functional Alternatives (meet or exceed electrical requirements with acceptable parameter variations).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Product Status	RoHS Status
IRFP460A	Vishay Siliconix	500	20	270 @ 12A, 10V	105 @ 10V	280	TO-247-3	Obsolete	Non-compliant
IRFP460APBF	Vishay Siliconix	500	20	270 @ 12A, 10V	105 @ 10V	280	TO-247-3	Active	RoHS3 Compliant
APT20F50B	Microsemi Corporation	500	20	300 @ 10A, 10V	75 @ 10V	290	TO-247-3	Active	RoHS3 Compliant
IPW50R250CPFKSA1	Infineon Technologies	500	13	250 @ 7.8A, 10V	36 @ 10V	114	TO-247-3	Active	RoHS3 Compliant
IXFH26N50P	IXYS	500	26	230 @ 13A, 10V	60 @ 10V	400	TO-247-3	Active	RoHS3 Compliant
IXTH16N50D2	IXYS	500	16	240 @ 8A, 0V	199 @ 5V	695	TO-247-3	Active	RoHS3 Compliant
SPW20N60C3FKSA1	Infineon Technologies	650	20.7	190 @ 13.1A, 10V	114 @ 10V	208	TO-247-3	Active	RoHS3 Compliant
STW14NK50Z	STMicroelectronics	500	14	380 @ 6A, 10V	92 @ 10V	150	TO-247-3	Active	RoHS3 Compliant
STW19NM50N	STMicroelectronics	500	14	250 @ 7A, 10V	34 @ 10V	110	TO-247-3	Active	RoHS3 Compliant
STW20NK50Z	STMicroelectronics	500	17	270 @ 8.5A, 10V	119 @ 10V	190	TO-247-3	Active	RoHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Preferred for Pin-Compatible Replacement):

IRFP460APBF is the direct functional equivalent of the obsolete IRFP460A. This part maintains identical electrical specifications (500V, 20A, 270mOhm Rds On, 280W power dissipation) and packaging (TO-247-3). The primary distinction is product status: IRFP460APBF is active and RoHS3 compliant, eliminating obsolescence risk and meeting current regulatory requirements. This part is recommended for direct substitution in existing designs without circuit modification.

Functional Alternatives (For New Designs or Performance Optimization):

IXFH26N50P exceeds the IRFP460A specification in continuous drain current (26A versus 20A) and power dissipation (400W versus 280W) while maintaining 500V voltage rating and TO-247-3 packaging. Lower on-state resistance (230mOhm versus 270mOhm) provides improved thermal efficiency. This device is suitable for applications requiring higher current capacity or thermal margin.

SPW20N60C3FKSA1 provides higher voltage rating (650V versus 500V) with comparable current (20.7A versus 20A) and superior on-state resistance (190mOhm versus 270mOhm). This part accommodates higher voltage transients and reduces conduction losses. Selection is appropriate for applications with elevated voltage stress or efficiency requirements.

STW20NK50Z maintains 500V rating with 17A continuous current and 270mOhm on-state resistance, providing near-equivalent performance with reduced power dissipation (190W versus 280W). This device is suitable for lower-power applications or where thermal management is less critical.

Not Recommended for Direct Substitution:

IPW50R250CPFKSA1 and STW19NM50N have reduced continuous drain current (13A and 14A respectively) below the IRFP460A specification (20A). These devices are suitable only for applications with lower current requirements.

IXTH16N50D2 is a depletion-mode device with different gate drive characteristics and is not suitable for enhancement-mode circuit designs.

All recommended substitutes are RoHS3 compliant and REACH unaffected, meeting current regulatory standards.

Frequently Asked Questions (FAQ)

Q: Can IRFP460APBF be used as a direct replacement for IRFP460A?

A: Yes. IRFP460APBF is electrically and mechanically identical to IRFP460A, with identical voltage (500V), current (20A), on-state resistance (270mOhm), and power dissipation (280W) specifications. Both use TO-247-3 packaging. The primary difference is that IRFP460APBF is active and RoHS3 compliant, whereas IRFP460A is obsolete. No circuit modification is required.

Q: What is the difference between TO-247-3, TO-247AC, and TO-247AD packaging?

A: All three are variants of the TO-247 through-hole package with three leads (drain, gate, source). TO-247AC and TO-247AD are manufacturer-specific designations for the same physical package. Devices in these variants are mechanically and electrically interchangeable in standard TO-247-3 footprints.

Q: Why does SPW20N60C3FKSA1 have a higher voltage rating (650V) than IRFP460A (500V)?

A: SPW20N60C3FKSA1 is designed for higher voltage applications. The 650V rating provides additional margin for voltage transients and overshoot conditions. This device can be used in 500V applications without derating, but the higher voltage rating increases on-chip capacitance and may affect switching characteristics. Selection depends on circuit requirements.

Q: Can I use IXFH26N50P in place of IRFP460A if my circuit only requires 20A?

A: Yes. IXFH26N50P is rated for 26A continuous current, exceeding the 20A requirement of IRFP460A. The device maintains 500V voltage rating and TO-247-3 packaging. Lower on-state resistance (230mOhm versus 270mOhm) reduces conduction losses. No circuit modification is required, and the higher current rating provides design margin.

Q: Why do STW19NM50N and STW14NK50Z have lower continuous current ratings (14A) than IRFP460A (20A)?

A: These devices are designed for lower-power applications. Continuous current rating reflects the maximum safe operating current at specified temperature conditions. These parts are not suitable for applications requiring 20A continuous current, as operation above rated current causes excessive junction temperature rise and device degradation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts listed in the parameter comparison table are RoHS3 compliant. The obsolete IRFP460A is RoHS non-compliant. RoHS3 compliance is required for new designs and procurement in most jurisdictions.

Q: What does "Depletion Mode" mean for IXTH16N50D2?

A: Depletion-mode MOSFETs conduct current with zero gate-source voltage, unlike enhancement-mode devices which require positive gate voltage to conduct. IXTH16N50D2 is a depletion-mode device and is not suitable for circuits designed for enhancement-mode operation. This device is not recommended as a substitute for IRFP460A.

Q: How do I determine if a substitute part is suitable for my application?

A: Compare the following parameters between your application requirements and the substitute part specification: (1) Drain-to-Source Voltage (Vdss) must equal or exceed circuit maximum voltage; (2) Continuous Drain Current (Id) must equal or exceed circuit maximum current; (3) On-State Resistance (Rds On) must be acceptable for thermal design; (4) Gate Threshold Voltage (Vgs(th)) must be compatible with available drive voltage; (5) Package and mounting type must match PCB footprint. Consult device datasheets for detailed electrical characteristics and thermal performance curves.

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