IRFP460 N-Channel 500V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP460 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage with 20A continuous drain current at 25°C. Manufactured by Vishay Siliconix, this device is housed in a TO-247-3 through-hole package and dissipates up to 280W at the case temperature. The IRFP460 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Resistance (Rds On) @ 12A, 10V	270	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	210	nC
Power Dissipation (Max)	280	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFP460 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-source voltage (Vdss) must equal or exceed 500V
Continuous drain current (Id) must meet or exceed 20A at 25°C
On-state resistance (Rds On) characteristics must support the application's power dissipation profile
Gate threshold voltage (Vgs(th)) and gate charge (Qg) must be compatible with existing gate drive circuitry
Maximum gate voltage (Vgs Max) must accommodate the drive voltage scheme

Mechanical Compatibility Requirements:

Package type must be TO-247-3 or compatible through-hole variant
Mounting type must be through-hole
Pin configuration must match TO-247-3 standard

Compliance and Status Requirements:

RoHS3 compliance is preferred for new designs
Product status should be active to ensure long-term availability
Moisture sensitivity level (MSL) of 1 (Unlimited) is acceptable

Substitute parts are grouped into two categories: parametric equivalents (matching all key electrical specifications) and manufacturer-recommended alternatives (meeting minimum electrical requirements with potential trade-offs in current rating or power dissipation).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Product Status	RoHS Status
IRFP460	Vishay Siliconix	500	20	270 @ 12A, 10V	210 @ 10V	280	Obsolete	Non-compliant
IRFP460PBF	Vishay Siliconix	500	20	270 @ 12A, 10V	210 @ 10V	280	Active	ROHS3 Compliant
IXFH22N50P	IXYS	500	22	270 @ 11A, 10V	50 @ 10V	350	Active	ROHS3 Compliant
IXFH26N50P3	IXYS	500	26	230 @ 13A, 10V	42 @ 10V	500	Active	ROHS3 Compliant
IPW50R250CPFKSA1	Infineon Technologies	500	13	250 @ 7.8A, 10V	36 @ 10V	114	Active	ROHS3 Compliant
SPW20N60C3FKSA1	Infineon Technologies	650	20.7	190 @ 13.1A, 10V	114 @ 10V	208	Active	ROHS3 Compliant
STW14NK50Z	STMicroelectronics	500	14	380 @ 6A, 10V	92 @ 10V	150	Active	ROHS3 Compliant
STW19NM50N	STMicroelectronics	500	14	250 @ 7A, 10V	34 @ 10V	110	Active	ROHS3 Compliant
STW20NK50Z	STMicroelectronics	500	17	270 @ 8.5A, 10V	119 @ 10V	190	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRFP460PBF is the direct parametric equivalent to the obsolete IRFP460. This part maintains identical electrical specifications (500V, 20A, 280W) and is manufactured by the same supplier (Vishay Siliconix). The primary distinction is product status (active versus obsolete) and RoHS3 compliance. IRFP460PBF is supplied in tube packaging and is suitable for immediate substitution in existing designs without circuit modification.

Higher Current Capability Alternatives:

IXFH22N50P and IXFH26N50P3 (IXYS) provide increased current ratings (22A and 26A respectively) while maintaining 500V voltage rating. Both devices feature improved power dissipation (350W and 500W) and lower gate charge characteristics. These parts are suitable for applications requiring higher current capacity or improved thermal performance. IXFH26N50P3 offers the lowest on-state resistance (230 mOhm) among 500V alternatives.

Lower Current Alternatives:

STW14NK50Z, STW19NM50N, and STW20NK50Z (STMicroelectronics) provide reduced current ratings (14A, 14A, and 17A respectively) with 500V voltage rating. These devices are appropriate for applications where the full 20A capability is not required. STW19NM50N features the lowest gate charge (34 nC) and input capacitance (1000 pF), making it suitable for high-frequency switching applications.

Higher Voltage Alternative:

SPW20N60C3FKSA1 (Infineon Technologies) operates at 650V with 20.7A continuous current and 208W power dissipation. This device is suitable for applications requiring higher voltage margin or operating in higher voltage systems. The elevated voltage rating results in lower on-state resistance (190 mOhm) compared to the IRFP460.

Limited Current Capability:

IPW50R250CPFKSA1 (Infineon Technologies CoolMOS™ series) is rated for 13A continuous current at 500V, below the IRFP460 specification. This device is not recommended as a direct substitute for applications requiring the full 20A rating but may be considered for current-limited applications where the superior gate charge characteristics (36 nC) and lower input capacitance (1420 pF) provide circuit advantages.

All recommended substitutes are RoHS3 compliant with active product status, ensuring long-term availability and regulatory compliance for new designs.

Frequently Asked Questions (FAQ)

Q: Can IRFP460PBF be used as a direct replacement for IRFP460?

A: Yes. IRFP460PBF is electrically and mechanically identical to IRFP460, with the same 500V rating, 20A continuous current, and 280W power dissipation. The primary differences are product status (active versus obsolete) and RoHS3 compliance. No circuit modifications are required.

Q: What is the difference between IXFH22N50P and IXFH26N50P3?

A: Both devices maintain the 500V voltage rating but differ in current capacity and power dissipation. IXFH22N50P is rated for 22A and 350W, while IXFH26N50P3 is rated for 26A and 500W. IXFH26N50P3 features lower on-state resistance (230 mOhm versus 270 mOhm), resulting in reduced power dissipation at equivalent current levels. Selection depends on application current requirements and thermal management capabilities.

Q: Are STMicroelectronics alternatives suitable for 20A applications?

A: STW14NK50Z and STW19NM50N are rated for 14A continuous current, below the IRFP460 specification. STW20NK50Z is rated for 17A, also below 20A. These devices are not suitable for applications requiring the full 20A rating. They are appropriate only for applications with lower current requirements or where gate charge and switching speed characteristics provide circuit advantages.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as STW19NM50N at 34 nC) reduces switching losses and allows higher switching frequencies. Higher gate charge (such as IXFH22N50P at 50 nC) may require more robust gate drive circuitry but is not incompatible with standard gate drivers. Gate charge compatibility depends on the specific gate drive circuit design.

Q: Can SPW20N60C3FKSA1 be used in a 500V application?

A: Yes. SPW20N60C3FKSA1 is rated for 650V, which exceeds the 500V requirement. The higher voltage rating provides additional safety margin and does not prevent operation in 500V systems. However, the elevated voltage rating results in different on-state resistance and gate charge characteristics that may affect circuit performance. Verification of gate drive compatibility is recommended.

Q: Are all substitute parts available in TO-247-3 packaging?

A: All substitute parts listed are housed in TO-247-3 or compatible through-hole variants (TO-247AC, TO-247AD, PG-TO247-3-1). These packages are mechanically and electrically compatible with standard TO-247-3 footprints. Pin configuration remains consistent across all listed devices.

Q: What is the impact of RoHS compliance on part selection?

A: All active substitute parts are RoHS3 compliant, meeting current regulatory requirements for new designs and production. The original IRFP460 is RoHS non-compliant, making RoHS3-compliant substitutes necessary for applications subject to RoHS regulations. Compliance status does not affect electrical performance or circuit compatibility.

Q: How does on-state resistance (Rds On) affect device selection?

A: On-state resistance determines conduction losses during the on-state. Lower Rds On reduces power dissipation and heat generation. IXFH26N50P3 features the lowest Rds On (230 mOhm) among 500V alternatives, resulting in improved thermal performance. Higher Rds On devices (such as STW14NK50Z at 380 mOhm) generate more heat and require enhanced thermal management. Selection depends on application power dissipation budget and thermal design constraints.

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