IRFP450NPBF Equivalent & Substitute Parts

Part Overview

The IRFP450NPBF is an N-Channel 500V 14A MOSFET manufactured by Vishay Siliconix in a TO-247-3 through-hole package. This device is rated for 200W power dissipation and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	14	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	370 mOhm @ 8.4A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77	nC @ 10V
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFP450NPBF is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V minimum
N-Channel MOSFET technology
Through-hole mounting (TO-247 package family)
Operating temperature range: -55°C to 150°C minimum
Gate voltage compatibility: ±30V maximum

Secondary Compatibility Parameters:

Continuous drain current (Id): Equal to or greater than 14A
On-state resistance (Rds On): Lower or equivalent values preferred
Gate charge (Qg): Lower values indicate improved switching performance
Power dissipation capability: Equal to or greater than 200W

The substitute parts listed below meet or exceed the primary criteria and maintain functional compatibility within the specified electrical and thermal operating envelope. Parts are grouped by manufacturer and product series while maintaining the core voltage and current ratings.

Parameter Comparison

Parameter	IRFP450NPBF	IXFH16N50P	IXFH16N50P3	IXTH20N50D	IXTH24N50L	STW14NK50Z	STW20NK50Z
Manufacturer	Vishay Siliconix	IXYS	IXYS	IXYS	IXYS	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	500	500	500	500
Id @ 25°C (A)	14	16	16	20	24	14	17
Drive Voltage (V)	10	10	10	10	20	10	10
Rds On (Max) (mOhm)	370 @ 8.4A, 10V	400 @ 8A, 10V	360 @ 8A, 10V	330 @ 10A, 10V	300 @ 500mA, 20V	380 @ 6A, 10V	270 @ 8.5A, 10V
Vgs(th) (Max) (V)	5 @ 250µA	5.5 @ 2.5mA	5 @ 2.5mA	Not specified	5 @ 250µA	4.5 @ 100µA	4.5 @ 100µA
Qg (Max) (nC)	77 @ 10V	43 @ 10V	29 @ 10V	125 @ 10V	160 @ 20V	92 @ 10V	119 @ 10V
Ciss (Max) (pF)	2260 @ 25V	2250 @ 25V	1515 @ 25V	2500 @ 25V	2500 @ 25V	2000 @ 25V	2600 @ 25V
Power Dissipation (Max) (W)	200	300	330	400	400	150	190
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement Capability):

The IXFH16N50P3 and STW14NK50Z provide the closest functional equivalence to the IRFP450NPBF. Both devices maintain the 500V Vdss rating, 14A continuous drain current specification, and TO-247-3 package format. The IXFH16N50P3 offers improved performance characteristics with lower gate charge (29 nC versus 77 nC) and reduced input capacitance (1515 pF versus 2260 pF), resulting in faster switching transitions. The STW14NK50Z maintains nearly identical current ratings with comparable on-state resistance and is available in active production status from STMicroelectronics.

Secondary Substitutes (Enhanced Performance):

The IXFH16N50P, STW20NK50Z, IXTH20N50D, and IXTH24N50L provide higher current ratings (16A to 24A) and improved power dissipation capabilities (300W to 400W). These devices are suitable for applications where the IRFP450NPBF operates below its maximum current specification and where thermal margin improvement is beneficial. All secondary substitutes maintain 500V Vdss rating and TO-247-3 package compatibility.

Compliance and Availability:

All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original IRFP450NPBF. All substitute devices are in active production status, ensuring long-term availability and supply chain stability. The IXFH16N50P3 and IXTH24N50L demonstrate the highest inventory levels (14,088 and 688,100 units respectively), providing immediate procurement availability.

Frequently Asked Questions (FAQ)

Q: Can the IXFH16N50P3 directly replace the IRFP450NPBF in existing circuit designs?

A: Yes. The IXFH16N50P3 maintains identical voltage (500V) and current (16A) ratings, operates across the same temperature range (-55°C to 150°C), and uses the same TO-247-3 package. Gate drive voltage compatibility (±30V maximum) is identical. The lower gate charge and input capacitance of the IXFH16N50P3 may improve switching performance without requiring circuit modifications.

Q: What is the difference between IXFH16N50P and IXFH16N50P3?

A: Both devices share the same 500V/16A ratings and TO-247-3 package. The IXFH16N50P3 incorporates Polar3™ technology, resulting in lower gate charge (29 nC versus 43 nC), reduced input capacitance (1515 pF versus 2250 pF), and higher power dissipation capability (330W versus 300W). The IXFH16N50P3 is the preferred selection for new designs.

Q: Why do some substitute parts have higher current ratings than the IRFP450NPBF?

A: Higher current-rated devices (STW20NK50Z at 17A, IXTH20N50D at 20A, IXTH24N50L at 24A) provide design flexibility and thermal margin in applications where the IRFP450NPBF operates below its 14A maximum specification. These devices maintain the 500V voltage rating and TO-247-3 package, allowing direct pinout compatibility while offering improved performance headroom.

Q: Are all substitute parts available in the same package format?

A: Yes. All substitute parts listed use the TO-247-3 through-hole package, ensuring mechanical and electrical compatibility with existing PCB layouts and socket designs. Pin assignments remain consistent across all listed devices.

Q: What is the significance of the IXTH20N50D being classified as Depletion Mode?

A: The IXTH20N50D is a depletion-mode MOSFET, which differs from the enhancement-mode operation of the IRFP450NPBF and other listed substitutes. Depletion-mode devices conduct current with zero gate voltage and require negative gate voltage to turn off. This device is not suitable as a direct replacement in circuits designed for enhancement-mode operation.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge values (IXFH16N50P3 at 29 nC) result in faster switching transitions and reduced gate drive power requirements compared to higher values (IRFP450NPBF at 77 nC). This can improve overall circuit efficiency and reduce electromagnetic interference in high-frequency applications.

Q: Can the STW20NK50Z be used in place of the IRFP450NPBF?

A: Yes, with consideration of current rating differences. The STW20NK50Z provides 17A continuous drain current versus the IRFP450NPBF's 14A, maintaining the 500V voltage rating and TO-247-3 package. The STW20NK50Z offers lower on-state resistance (270 mOhm versus 370 mOhm) and improved thermal performance (190W versus 200W power dissipation). This device is suitable for direct replacement with enhanced performance characteristics.

Q: What is the product status significance for long-term design support?

A: The IRFP450NPBF is classified as obsolete, indicating discontinued production and limited future availability. All listed substitute parts are in active production status, ensuring continued supply, technical support, and design continuity for new and existing applications. Selection of active-status devices is recommended for designs requiring long-term component availability.

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