IRFP450LC N-Channel 500V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP450LC is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage with 14A continuous drain current at 25°C. Manufactured by Vishay Siliconix, this device is packaged in a TO-247-3 through-hole configuration and dissipates up to 190W at the case temperature. The IRFP450LC is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On) @ 8.4A, 10V	400	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	74	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	−55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IRFP450LC is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 14A at 25°C
On-State Resistance (Rds On): Must not exceed 400mOhm at specified gate-source voltage
Gate-Source Threshold Voltage (Vgs(th)): Must fall within acceptable operating range
Operating Temperature Range: Must encompass −55°C to 150°C
Mounting Type: Through Hole
Package Type: TO-247-3 or compatible TO-247 variant

Substitution Categories:

Direct Equivalents maintain identical electrical specifications and packaging. These parts are pin-compatible and require no circuit modifications.

Functional Equivalents meet or exceed all electrical parameters while maintaining TO-247 packaging. These parts may exhibit improved performance characteristics (higher current rating, lower on-state resistance, or increased power dissipation) and are suitable for direct replacement.

Depletion-Mode Variants operate as depletion-mode devices and are not suitable for direct substitution in enhancement-mode circuits without circuit redesign.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Package	Status
IRFP450LC	Vishay Siliconix	500	14	400 @ 8.4A, 10V	4 @ 250µA	74 @ 10V	190	TO-247-3	Obsolete
IRFP450LCPBF	Vishay Siliconix	500	14	400 @ 8.4A, 10V	4 @ 250µA	74 @ 10V	190	TO-247-3	Active
IXFH16N50P	IXYS	500	16	400 @ 8A, 10V	5.5 @ 2.5mA	43 @ 10V	300	TO-247-3	Active
IXTH15N50L2	IXYS	500	15	480 @ 7.5A, 10V	4.5 @ 250µA	123 @ 10V	300	TO-247-3	Active
IXTH20N50D	IXYS	500	20	330 @ 10A, 10V	Not specified	125 @ 10V	400	TO-247-3	Active
IXTH24N50L	IXYS	500	24	300 @ 500mA, 20V	5 @ 250µA	160 @ 20V	400	TO-247-3	Active
IXTH6N50D2	IXYS	500	6	500 @ 3A, 0V	Not specified	96 @ 5V	300	TO-247-3	Active
STW14NK50Z	STMicroelectronics	500	14	380 @ 6A, 10V	4.5 @ 100µA	92 @ 10V	150	TO-247-3	Active
STW20NK50Z	STMicroelectronics	500	17	270 @ 8.5A, 10V	4.5 @ 100µA	119 @ 10V	190	TO-247-3	Active

Engineering Selection Recommendations

Direct Replacement (Pin-Compatible, No Circuit Modification Required):

IRFP450LCPBF is the direct active equivalent of the obsolete IRFP450LC. Both devices share identical electrical specifications and packaging. IRFP450LCPBF is RoHS3 compliant and carries active product status, making it the primary choice for design continuity and production replacement.

STW14NK50Z (STMicroelectronics) provides equivalent 14A continuous drain current at 500V with improved on-state resistance (380mOhm versus 400mOhm). This device is RoHS3 compliant and active. The reduced power dissipation rating (150W versus 190W) requires thermal analysis in applications approaching the original device's power limits.

Functional Equivalents (Enhanced Performance, Pin-Compatible):

IXFH16N50P (IXYS) exceeds the IRFP450LC specification with 16A continuous drain current, 300W power dissipation, and reduced gate charge (43nC versus 74nC). This device is RoHS3 compliant and active. The lower gate charge enables faster switching characteristics.

IXTH15N50L2 (IXYS) provides 15A continuous drain current with 300W power dissipation. This device is RoHS3 compliant and active. The increased gate charge (123nC) and input capacitance (4080pF) result in slower switching compared to the original device.

STW20NK50Z (STMicroelectronics) delivers 17A continuous drain current at 500V with improved on-state resistance (270mOhm) and maintains 190W power dissipation. This device is RoHS3 compliant and active. The higher current rating and lower on-state resistance reduce conduction losses.

Higher Current Variants (Performance Enhancement):

IXTH20N50D and IXTH24N50L are depletion-mode devices unsuitable for direct substitution in enhancement-mode circuits. IXTH6N50D2 is a lower-current depletion-mode variant and does not meet the 14A minimum requirement.

Compliance Status:

All recommended active substitutes are RoHS3 compliant and REACH unaffected. The original IRFP450LC is RoHS non-compliant and obsolete. Selection of RoHS3-compliant alternatives ensures regulatory compliance for new production.

Frequently Asked Questions (FAQ)

Q: Can IRFP450LCPBF directly replace IRFP450LC without circuit modifications?

A: Yes. IRFP450LCPBF is the direct active equivalent with identical electrical specifications, gate-source threshold voltage, gate charge, and power dissipation. Pin configuration and package are identical. No circuit modifications are required.

Q: What is the difference between IRFP450LC and STW14NK50Z?

A: Both devices are rated for 500V and 14A continuous drain current. STW14NK50Z exhibits lower on-state resistance (380mOhm versus 400mOhm) but reduced power dissipation (150W versus 190W). STW14NK50Z is RoHS3 compliant and active, while IRFP450LC is obsolete and RoHS non-compliant. Thermal analysis is required for applications dissipating power near 190W.

Q: Can IXFH16N50P replace IRFP450LC?

A: IXFH16N50P meets all electrical requirements with enhanced specifications: 16A continuous drain current (versus 14A), 300W power dissipation (versus 190W), and significantly lower gate charge (43nC versus 74nC). Pin configuration and TO-247-3 packaging are compatible. The lower gate charge enables faster switching. No circuit modifications are required, but switching frequency performance will improve.

Q: Why are IXTH20N50D and IXTH24N50L not recommended as direct substitutes?

A: IXTH20N50D and IXTH24N50L are depletion-mode MOSFETs, whereas IRFP450LC is an enhancement-mode device. Depletion-mode devices conduct current at zero gate-source voltage and require negative gate voltage to turn off. Direct substitution in enhancement-mode circuits will cause circuit malfunction. Circuit redesign is necessary for depletion-mode device integration.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the device and influences switching speed. IXFH16N50P has significantly lower gate charge (43nC versus 74nC), enabling faster switching transitions and reduced switching losses. IXTH15N50L2 has higher gate charge (123nC), resulting in slower switching. Selection depends on circuit switching frequency requirements and thermal constraints.

Q: Are all recommended substitutes RoHS3 compliant?

A: Yes. IRFP450LCPBF, IXFH16N50P, IXTH15N50L2, STW14NK50Z, and STW20NK50Z are all RoHS3 compliant. The original IRFP450LC is RoHS non-compliant. RoHS3 compliance is mandatory for new production in regulated markets.

Q: Can IXTH15N50L2 be used in high-frequency switching applications?

A: IXTH15N50L2 exhibits higher gate charge (123nC) and input capacitance (4080pF) compared to IRFP450LC (74nC and 2200pF respectively). These characteristics result in slower switching transitions. For high-frequency applications, IXFH16N50P with lower gate charge (43nC) is more suitable.

Q: What thermal considerations apply when selecting STW20NK50Z over IRFP450LC?

A: STW20NK50Z maintains the same 190W power dissipation as IRFP450LC while delivering higher continuous drain current (17A versus 14A) and lower on-state resistance (270mOhm versus 400mOhm). The improved on-state resistance reduces conduction losses, enabling higher current operation within the same thermal budget. Thermal design remains equivalent.

Q: Is packaging compatibility guaranteed across all recommended substitutes?

A: All recommended substitutes use TO-247-3 or compatible TO-247 packaging with identical pin configuration. Physical mounting and thermal interface compatibility are maintained. Verify PCB footprint dimensions and heatsink interface specifications for specific applications.

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