IRFP450A N-Channel 500V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP450A is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage and 14A continuous drain current at 25°C. The device is packaged in a TO-247-3 through-hole configuration with a maximum power dissipation of 190W. The IRFP450A is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Substiute Parts

IRFP450A
Vishay SiliconixIn Stock: 1475IRFP450A Datasheet
IRFP450A
Current Part
IRFP450APBF
Vishay SiliconixIn Stock: 1389IRFP450APBF Datasheet
IRFP450APBF
Direct
IXFH16N50P
IXYSIn Stock: 1718IXFH16N50P Datasheet
IXFH16N50P
MFR Recommended
IXTH20N50D
IXYSIn Stock: 13520IXTH20N50D Datasheet
IXTH20N50D
MFR Recommended
IXTH24N50L
IXYSIn Stock: 688152IXTH24N50L Datasheet
IXTH24N50L
MFR Recommended
STW14NK50Z
STMicroelectronicsIn Stock: 5526STW14NK50Z Datasheet
STW14NK50Z
MFR Recommended
STW20NK50Z
STMicroelectronicsIn Stock: 7836STW20NK50Z Datasheet
STW20NK50Z
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 14 A
On-State Drain Resistance (Rds On) @ 10V 400 mOhm
Gate Threshold Voltage (Vgs(th)) 4 V @ 250µA
Gate Charge (Qg) @ 10V 64 nC
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) @ 25V 2038 pF
Power Dissipation (Max) 190 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRFP450A is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-source voltage rating (Vdss) must equal or exceed 500V
  • Continuous drain current (Id) must meet or exceed 14A at 25°C
  • On-state drain resistance (Rds On) must not exceed 400mOhm at the specified gate voltage
  • Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
  • Maximum gate voltage (Vgs) must be ±30V or greater
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

  • Mounting type must be through-hole
  • Package must be TO-247-3 or equivalent TO-247 variant
  • Pin configuration must be compatible with existing PCB layouts

Product Status Consideration:

  • Active product status is preferred for long-term availability and supply chain continuity
  • RoHS3 compliance is required for new designs and regulated applications

Substitute parts are grouped into two categories: direct equivalents (identical electrical and mechanical specifications) and functional alternatives (meeting or exceeding electrical requirements with compatible packaging).

Parameter Comparison

Parameter IRFP450A IRFP450APBF IXFH16N50P IXTH20N50D IXTH24N50L STW14NK50Z STW20NK50Z
Manufacturer Vishay Siliconix Vishay Siliconix IXYS IXYS IXYS STMicroelectronics STMicroelectronics
Vdss (V) 500 500 500 500 500 500 500
Id @ 25°C (A) 14 14 16 20 24 14 17
Rds On (mOhm) 400 @ 8.4A, 10V 400 @ 8.4A, 10V 400 @ 8A, 10V 330 @ 10A, 10V 300 @ 500mA, 20V 380 @ 6A, 10V 270 @ 8.5A, 10V
Vgs(th) (V) 4 @ 250µA 4 @ 250µA 5.5 @ 2.5mA 5 @ 250µA 4.5 @ 100µA 4.5 @ 100µA
Qg @ 10V (nC) 64 64 43 125 160 92 119
Vgs Max (V) ±30 ±30 ±30 ±30 ±30 ±30 ±30
Ciss @ 25V (pF) 2038 2038 2250 2500 2500 2000 2600
Power Dissipation (W) 190 190 300 400 400 150 190
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active Active Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Preferred for Pin-Compatible Replacement):

IRFP450APBF is the direct successor to the IRFP450A, manufactured by Vishay Siliconix. This part maintains identical electrical specifications (500V, 14A, 400mOhm Rds On, 64nC gate charge) and mechanical compatibility (TO-247-3 package). The IRFP450APBF is classified as active product status with ROHS3 compliance, ensuring long-term availability and regulatory conformance. This part is suitable for direct substitution in existing designs without circuit modification.

Functional Alternatives (For Enhanced Performance or Availability):

STW14NK50Z (STMicroelectronics) provides electrical equivalence to the IRFP450A with identical 500V/14A ratings and compatible Rds On specification (380mOhm). This part is active with ROHS3 compliance and offers the SuperMESH™ technology platform. The STW14NK50Z is suitable for applications requiring direct current and voltage compatibility.

STW20NK50Z (STMicroelectronics) offers increased current capability (17A) and improved Rds On performance (270mOhm) while maintaining 500V rating and TO-247-3 packaging. This part is active with ROHS3 compliance and is suitable for applications where enhanced thermal performance or higher current margins are required.

IXFH16N50P (IXYS) provides 500V/16A capability with 400mOhm Rds On and enhanced power dissipation (300W). This part is active with ROHS3 compliance and offers the HiPerFET™ technology platform. The IXFH16N50P is suitable for applications requiring higher current capacity with improved thermal characteristics.

IXTH24N50L (IXYS) offers maximum current capability (24A) and lowest Rds On (300mOhm) among available substitutes, with 400W power dissipation. This part is active with ROHS3 compliance and is suitable for high-current applications or designs requiring superior thermal performance.

IXTH20N50D (IXYS) provides 500V/20A capability with improved Rds On (330mOhm) and 400W power dissipation. This part is active with ROHS3 compliance and is suitable for applications requiring increased current handling with enhanced thermal margin.

All substitute parts maintain TO-247-3 through-hole packaging, ±30V gate voltage rating, and -55°C to 150°C operating temperature range, ensuring mechanical and thermal compatibility with existing designs.

Frequently Asked Questions (FAQ)

Q: Can IRFP450APBF be used as a direct replacement for IRFP450A?

A: Yes. IRFP450APBF is the direct equivalent with identical electrical specifications (500V, 14A, 400mOhm Rds On) and TO-247-3 packaging. No circuit modification is required. The primary difference is product status (active vs. obsolete) and RoHS3 compliance.

Q: What is the difference between IRFP450A and STW14NK50Z?

A: Both parts share identical voltage (500V) and current (14A) ratings with compatible Rds On specifications (400mOhm vs. 380mOhm). The STW14NK50Z uses STMicroelectronics SuperMESH™ technology and is active product status. Gate charge differs (64nC vs. 92nC), which may affect switching speed in gate-drive-limited applications.

Q: When should I use STW20NK50Z instead of IRFP450APBF?

A: STW20NK50Z is suitable when higher current capacity (17A vs. 14A) or improved Rds On performance (270mOhm vs. 400mOhm) is required. The increased current rating provides design margin for thermal management and reduces conduction losses. Both parts maintain 500V rating and TO-247-3 packaging.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IRFP450APBF, IXFH16N50P, IXTH20N50D, IXTH24N50L, STW14NK50Z, STW20NK50Z) are ROHS3 compliant. The original IRFP450A is RoHS non-compliant, making substitution necessary for regulated applications.

Q: What is the impact of different gate charge (Qg) values on circuit design?

A: Gate charge affects gate-drive current requirements and switching speed. IXFH16N50P has lower gate charge (43nC) compared to IRFP450A (64nC), resulting in faster switching and reduced gate-drive power. Conversely, IXTH24N50L has higher gate charge (160nC), requiring higher gate-drive current but offering improved noise immunity.

Q: Can I use IXTH24N50L in a circuit designed for IRFP450A?

A: IXTH24N50L is electrically compatible (500V rating, exceeds 14A requirement) and uses TO-247-3 packaging. However, the higher gate charge (160nC vs. 64nC) and different Rds On specification (300mOhm @ 20V vs. 400mOhm @ 10V) require gate-drive circuit verification. The increased power dissipation capability (400W vs. 190W) provides thermal margin.

Q: What is the difference between TO-247-3 and TO-247AD packaging?

A: TO-247-3 and TO-247AD are both three-terminal through-hole packages variants. All substitute parts use TO-247-3 or equivalent TO-247 configuration, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions.

Q: Which substitute part offers the best thermal performance?

A: IXTH24N50L and IXTH20N50D offer the highest power dissipation ratings (400W) compared to IRFP450A (190W). IXTH24N50L additionally provides the lowest Rds On (300mOhm), resulting in minimum conduction losses and superior thermal performance in high-current applications.

Q: Are all substitute parts available in tube packaging?

A: IRFP450APBF, IXFH16N50P, IXTH24N50L, STW14NK50Z, and STW20NK50Z are available in tube packaging. IXTH20N50D packaging specification is not detailed in the provided data. Verify packaging availability with component suppliers for specific procurement requirements.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts maintain the same operating temperature range as IRFP450A: -55°C to 150°C (TJ). This ensures thermal compatibility with existing thermal management designs and environmental specifications.

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