IRFP450 N-Channel MOSFET 500V 14A Equivalent & Substitute Parts

Part Overview

The IRFP450 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage and 14A continuous drain current at 25°C. Manufactured by STMicroelectronics under the PowerMESH™ II series, this device is housed in a TO-247-3 through-hole package and dissipates up to 190W at the case temperature. The IRFP450 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate drive characteristics, and thermal performance while accommodating available packaging and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	14	A
Drive Voltage (Max Rds On)	10	V
On-State Resistance (Rds On) @ 7A, 10V	380	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	90	nC
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ 25V	2000	pF
Power Dissipation (Max)	190	W
Operating Temperature (TJ)	150	°C
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitute parts for the IRFP450 are classified into two categories based on electrical and mechanical compatibility:

Direct Electrical Equivalents maintain the same drain-to-source voltage (500V), continuous drain current (14A), and power dissipation (190W) specifications. These parts are interchangeable in applications where the IRFP450 was originally specified. Substitution is based on matching Vdss, Id, and thermal performance within the allowed parameter tolerances.

Similar Current-Rated Alternatives share the 500V voltage rating and 14A current specification but may differ in gate charge, on-state resistance, or input capacitance. These parts are suitable for applications with identical voltage and current requirements but may require circuit validation for switching speed and drive characteristics.

Higher Current Capacity Parts exceed the 14A rating while maintaining 500V Vdss. These parts provide design margin and are suitable for applications where current headroom is beneficial, though they are not direct replacements.

Key parameters determining substitution eligibility:

Drain-to-Source Voltage (Vdss): Must equal 500V
Continuous Drain Current (Id): Must equal or exceed 14A
Package Type: TO-247-3 or compatible TO-247 variants
Gate Drive Voltage: Must support 10V drive voltage
Operating Temperature: Must support 150°C junction temperature minimum

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Power Dissipation (W)	Package	Product Status
IRFP450	STMicroelectronics	500	14	380 @ 7A	4 @ 250µA	90	2000	190	TO-247-3	Obsolete
SIHG14N50D-E3	Vishay Siliconix	500	14	400 @ 7A	5 @ 250µA	58	1144	208	TO-247AC	Active
IRFP450APBF	Vishay Siliconix	500	14	400 @ 8.4A	4 @ 250µA	64	2038	190	TO-247AC	Active
IRFP450LCPBF	Vishay Siliconix	500	14	400 @ 8.4A	4 @ 250µA	74	2200	190	TO-247AC	Active
IRFP450PBF	Infineon Technologies	500	14	400 @ 8.4A	4 @ 250µA	150	2600	190	TO-247AC	Obsolete
APT20F50B	Microsemi Corporation	500	20	300 @ 10A	5 @ 500µA	75	2950	290	TO-247 [B]	Active

Engineering Selection Recommendations

For Direct Replacement (Obsolete to Active Transition):

IRFP450APBF and IRFP450LCPBF are the primary substitutes for the obsolete IRFP450. Both are manufactured by Vishay Siliconix, maintain identical 500V/14A ratings and 190W power dissipation, and are classified as active products with RoHS3 compliance. These parts are pin-compatible in TO-247AC packaging and require no circuit modifications. IRFP450APBF features lower gate charge (64 nC) compared to IRFP450LCPBF (74 nC), making it suitable for applications requiring faster switching response.

For Active Product Selection with Enhanced Performance:

SIHG14N50D-E3 (Vishay Siliconix) is an active product offering improved thermal performance (208W vs. 190W) and significantly reduced gate charge (58 nC vs. 90 nC), enabling faster switching transitions. On-state resistance is marginally higher (400 mOhm vs. 380 mOhm), and input capacitance is lower (1144 pF vs. 2000 pF), resulting in reduced drive circuit loading. This part is suitable for high-frequency switching applications where gate charge minimization is beneficial.

For Higher Current Margin Applications:

APT20F50B (Microsemi Corporation) provides 20A continuous drain current at 500V, exceeding the IRFP450 specification by 43%. This part offers superior on-state resistance (300 mOhm @ 10A) and higher power dissipation capability (290W), making it suitable for applications requiring additional current headroom or thermal margin. The TO-247 [B] package is mechanically compatible with TO-247-3 footprints. APT20F50B is an active product with RoHS3 compliance.

Compliance Considerations:

The original IRFP450 is RoHS non-compliant. All recommended active substitutes (IRFP450APBF, IRFP450LCPBF, SIHG14N50D-E3, APT20F50B) are RoHS3 compliant, meeting current regulatory requirements for new designs and production. All parts are classified as REACH Unaffected or REACH Compliant.

Frequently Asked Questions (FAQ)

Q: Can IRFP450APBF and IRFP450LCPBF be used interchangeably with the original IRFP450?

A: Yes. Both parts maintain identical electrical specifications (500V, 14A, 190W) and are pin-compatible in TO-247-3 footprints. The primary difference is gate charge: IRFP450APBF (64 nC) switches faster than IRFP450LCPBF (74 nC). Selection depends on gate drive circuit capability and switching frequency requirements.

Q: What is the difference between TO-247-3 and TO-247AC packaging?

A: TO-247-3 and TO-247AC are mechanically and electrically equivalent through-hole packages with identical pin configurations and thermal characteristics. The designations reflect different manufacturer conventions. Parts specified as TO-247AC are directly compatible with TO-247-3 footprints.

Q: Is SIHG14N50D-E3 suitable for direct replacement in existing IRFP450 designs?

A: SIHG14N50D-E3 is electrically compatible for 500V/14A applications. The reduced gate charge (58 nC vs. 90 nC) and lower input capacitance (1144 pF vs. 2000 pF) may improve switching performance in high-frequency circuits. Verify gate drive circuit compatibility, as lower capacitance reduces drive current requirements.

Q: When should APT20F50B be selected instead of direct IRFP450 equivalents?

A: APT20F50B is selected when the application requires current margin beyond 14A, improved on-state resistance (300 mOhm vs. 380 mOhm), or higher thermal dissipation capability (290W vs. 190W). The 20A rating provides design headroom for transient current conditions or thermal stress mitigation.

Q: Are all substitute parts RoHS compliant?

A: All active substitute parts listed (IRFP450APBF, IRFP450LCPBF, SIHG14N50D-E3, APT20F50B) are RoHS3 compliant. The original IRFP450 is RoHS non-compliant. Compliance status is mandatory for new designs and production in regulated markets.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (SIHG14N50D-E3 at 58 nC) reduces gate drive circuit power dissipation and enables faster switching at equivalent drive voltages. Higher gate charge (IRFP450PBF at 150 nC) requires more drive energy but may offer improved noise immunity in certain applications.

Q: Can IRFP450PBF be used as a substitute despite being obsolete?

A: IRFP450PBF is classified as obsolete and is not recommended for new designs. While electrically compatible with the original IRFP450, its obsolete status limits long-term availability and supply chain reliability. Active alternatives (IRFP450APBF, IRFP450LCPBF) are preferred.

Q: What are the thermal implications of selecting APT20F50B over direct IRFP450 equivalents?

A: APT20F50B dissipates up to 290W at case temperature compared to 190W for IRFP450 equivalents. This higher power rating provides thermal margin in applications operating near maximum current or with elevated ambient temperatures. Lower on-state resistance (300 mOhm) also reduces conduction losses, improving overall thermal performance.

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