IRFP448 Equivalent & Substitute Parts

Part Overview

The IRFP448 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 11A continuous drain current and 180W power dissipation in a TO-247-3 through-hole package. Manufactured by Vishay Siliconix, this device is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts is necessary for ongoing design support, production continuity, and system maintenance where this component is currently deployed.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	11	A
Power Dissipation (Max)	180	W
Rds On (Max) @ 6.6A, 10V	600	mOhm
Gate Charge (Qg) @ 10V	84	nC
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRFP448 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), package type (TO-247-3 through-hole), and operating temperature range (-55°C to 150°C). All substitute parts must maintain electrical compatibility within these boundaries.

The IRFP448PBF is a direct equivalent from the same manufacturer with identical electrical specifications and packaging. The IXTH15N50L2, IXTH6N50D2, and STW14NK50Z are alternative manufacturers' parts that share the 500V Vdss rating and TO-247-3 package format, enabling mechanical and electrical interchangeability in circuit designs. These substitutes vary in continuous drain current ratings and on-resistance characteristics, requiring circuit-level validation based on application requirements.

Parameter Comparison

Parameter	IRFP448	IRFP448PBF	IXTH15N50L2	IXTH6N50D2	STW14NK50Z
Manufacturer	Vishay Siliconix	Vishay Siliconix	IXYS	IXYS	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Active
Vdss (V)	500	500	500	500	500
Id @ 25°C (A)	11	11	15	6	14
Rds On (Max) (mOhm)	600 @ 6.6A, 10V	600 @ 6.6A, 10V	480 @ 7.5A, 10V	500 @ 3A, 0V	380 @ 6A, 10V
Gate Charge (nC)	84 @ 10V	84 @ 10V	123 @ 10V	96 @ 5V	92 @ 10V
Power Dissipation (W)	180	180	300	300	150
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFP448PBF is the primary direct substitute. This part is manufactured by Vishay Siliconix with identical electrical specifications and TO-247-3 packaging. The IRFP448PBF carries active product status and ROHS3 compliance, providing long-term availability and regulatory alignment for new designs and production continuity.

IXTH15N50L2 offers enhanced performance characteristics with 15A continuous drain current, lower on-resistance (480 mOhm), and higher power dissipation capability (300W). This part is suitable for applications requiring improved thermal performance or higher current handling. Active product status and ROHS3 compliance support ongoing supply chain requirements.

STW14NK50Z provides a balanced alternative with 14A continuous drain current and superior on-resistance (380 mOhm), resulting in reduced power dissipation during operation. This STMicroelectronics part features active product status and ROHS3 compliance. The SuperMESH™ technology platform supports advanced switching applications.

IXTH6N50D2 is a depletion-mode MOSFET with 6A continuous drain current. This part operates with different gate drive characteristics and is suitable only for applications specifically designed for depletion-mode operation. Selection of this part requires verification of circuit compatibility with depletion-mode device behavior.

All substitute parts maintain the 500V Vdss rating, TO-247-3 package format, and -55°C to 150°C operating temperature range, ensuring mechanical and thermal compatibility with existing PCB designs and thermal management solutions.

Frequently Asked Questions (FAQ)

Q: Can IRFP448PBF be used as a direct replacement for IRFP448?

A: Yes. The IRFP448PBF is manufactured by Vishay Siliconix with identical electrical specifications, gate charge, on-resistance, and power dissipation ratings. Both devices use the TO-247-3 package. The primary difference is product status: IRFP448PBF is active while IRFP448 is obsolete. IRFP448PBF also carries ROHS3 compliance.

Q: What are the key differences between IXTH15N50L2 and the original IRFP448?

A: The IXTH15N50L2 has higher continuous drain current (15A versus 11A), lower on-resistance (480 mOhm versus 600 mOhm), and higher power dissipation capability (300W versus 180W). Gate charge is higher at 123 nC. All parts share the same 500V Vdss rating and TO-247-3 package. The IXTH15N50L2 is suitable for applications requiring improved thermal performance or higher current capacity.

Q: Is IXTH6N50D2 compatible with circuits designed for IRFP448?

A: IXTH6N50D2 is a depletion-mode MOSFET, whereas IRFP448 is an enhancement-mode device. Depletion-mode operation requires different gate drive circuitry and biasing. Direct substitution without circuit modification is not recommended. This part is suitable only for applications specifically designed for depletion-mode MOSFET operation.

Q: What is the significance of RoHS compliance for substitute selection?

A: IRFP448 is RoHS non-compliant, while all substitute parts (IRFP448PBF, IXTH15N50L2, IXTH6N50D2, STW14NK50Z) are ROHS3 compliant. For new designs and production systems subject to RoHS regulations, compliant substitutes are required. For legacy system maintenance, non-compliant original parts may remain acceptable depending on application and regulatory jurisdiction.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed use the TO-247-3 through-hole package format, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions. No PCB redesign is required for package accommodation.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IRFP448 and IRFP448PBF both have 84 nC gate charge at 10V. Substitutes vary: IXTH15N50L2 (123 nC), IXTH6N50D2 (96 nC at 5V), and STW14NK50Z (92 nC). Higher gate charge increases switching losses and requires higher gate drive current. Circuit-level validation is necessary when gate charge differs significantly.

Q: What thermal considerations apply when substituting with higher power-rated devices?

A: IXTH15N50L2 and IXTH6N50D2 both support 300W power dissipation compared to IRFP448's 180W. Higher power ratings allow greater thermal margin in applications with high switching frequency or continuous conduction. Existing thermal management solutions (heatsinks, thermal interface materials) designed for 180W operation remain compatible with these higher-rated devices, providing additional design margin.

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