IRFP4332-203PBF N-Channel 250V 57A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP4332-203PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 250V drain-to-source voltage with 57A continuous drain current at 25°C. This device features the HEXFET® series technology in a Through Hole TO-247AC package and is designed for high-power switching applications requiring robust thermal performance up to 360W at the case temperature.

The IRFP4332-203PBF is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. This reference page identifies direct equivalents and parametric substitutes that maintain electrical and mechanical compatibility within specified tolerances.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	250	V	—
Continuous Drain Current (Id)	57	A	@ 25°C (Tc)
On-State Resistance (Rds On Max)	33	mOhm	@ 35A, 10V Vgs
Gate Threshold Voltage (Vgs(th) Max)	5	V	@ 250µA Id
Gate Charge (Qg Max)	150	nC	@ 10V Vgs
Input Capacitance (Ciss Max)	5860	pF	@ 25V Vds
Power Dissipation (Max)	360	W	@ Tc
Operating Temperature Range	-40 to 175	°C	TJ
Package Type	TO-247AC	—	Through Hole
Gate Voltage (Max)	±30	V	—

Substitute Part Grouping Explanation

Substitution of the IRFP4332-203PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 250V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET (Metal Oxide) (exact match required)
Package/Case: TO-247-3 or compatible through-hole variants
Mounting Type: Through Hole (exact match required)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 57A
On-State Resistance (Rds On): Equal to or less than 33mOhm at specified conditions
Gate Threshold Voltage (Vgs(th)): Within ±5V specification
Operating Temperature Range: Must encompass -40°C to 175°C or equivalent industrial range
Gate Voltage Rating (Vgs Max): ±30V or greater

Substitute Categories:

Category 1: Direct Manufacturer Equivalents Parts with identical electrical specifications and same base manufacturer (Infineon Technologies). These parts share the same HEXFET® series designation and are pin-compatible.

Category 2: Parametric Equivalents Parts from Infineon Technologies with identical electrical parameters but different packaging designations or product variants. These maintain full electrical compatibility.

Category 3: Cross-Manufacturer Substitutes Parts from alternative manufacturers (IXYS) that meet or exceed all electrical parameters while maintaining TO-247-3 package compatibility. These parts may have enhanced performance characteristics (higher current ratings, lower Rds On, or increased power dissipation).

Parameter Comparison

Parameter	IRFP4332-203PBF	IRFP4332PBF	IRFP4332PBFXKMA1	IXTH96N25T	IXFH100N25P	IXTQ100N25P	IXTX90N25L2
Manufacturer	Infineon	Infineon	Infineon	IXYS	IXYS	IXYS	IXYS
Vdss (V)	250	250	250	250	250	250	250
Id @ 25°C (A)	57	57	57	96	100	100	90
Rds On Max (mOhm)	33 @ 35A, 10V	33 @ 35A, 10V	33 @ 35A, 10V	29 @ 500mA, 10V	27 @ 50A, 10V	24 @ 50A, 10V	33 @ 45A, 10V
Vgs(th) Max (V)	5 @ 250µA	5 @ 250µA	5 @ 250µA	5 @ 1mA	5 @ 4mA	5 @ 250µA	4.5 @ 3mA
Qg Max (nC)	150 @ 10V	150 @ 10V	150 @ 10V	114 @ 10V	185 @ 10V	185 @ 10V	640 @ 10V
Ciss Max (pF)	5860 @ 25V	5860 @ 25V	5860 @ 25V	6100 @ 25V	6300 @ 25V	6300 @ 25V	23000 @ 25V
Power Dissipation Max (W)	360	360	360	625	600	600	960
Operating Temp Range (°C)	-40 to 175	-40 to 175	-40 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247AC	TO-247AC	TO-247AC	TO-247 (IXTH)	TO-247 (IXTH)	TO-3P	PLUS247™-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Pin-Compatible, Identical Specifications):

IRFP4332PBF is the primary direct substitute for IRFP4332-203PBF. Both parts are manufactured by Infineon Technologies and share identical electrical specifications. IRFP4332PBF is classified as Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. This part is available in Tube packaging with 19,000 units in stock, providing supply security for production requirements.

IRFP4332PBFXKMA1 serves as an alternative direct equivalent, also from Infineon Technologies with identical electrical parameters. This variant is classified as Active with ROHS3 compliance. Inventory availability is 625 units. Selection between IRFP4332PBF and IRFP4332PBFXKMA1 depends on packaging requirements and supply chain logistics.

For Performance-Enhanced Substitution (Higher Current Rating, Lower Rds On):

IXFH100N25P and IXTQ100N25P are cross-manufacturer substitutes from IXYS that exceed the electrical specifications of the IRFP4332-203PBF. Both devices are rated for 100A continuous drain current (compared to 57A) with lower on-state resistance (27mOhm and 24mOhm respectively). These parts are suitable for applications where increased current capacity or reduced conduction losses are beneficial. Both are Active products with ROHS3 compliance.

IXFH100N25P uses TO-247 (IXTH) packaging with 2,300 units in stock. IXTQ100N25P uses TO-3P packaging with 1,632 units in stock. Package selection depends on PCB layout and thermal management requirements.

IXTH96N25T provides a mid-range alternative with 96A continuous drain current and 29mOhm on-state resistance. This part uses TO-247 (IXTH) packaging and is Active with ROHS3 compliance. Inventory availability is 5,525 units.

For Specialized Thermal Performance:

IXTX90N25L2 is rated for 960W power dissipation (compared to 360W for the IRFP4332-203PBF) using IXYS Linear L2™ technology in PLUS247™-3 packaging. This part is suitable for applications requiring enhanced thermal performance. It is Active with ROHS3 compliance and 1,022 units in stock. Gate charge is significantly higher (640nC) and input capacitance is substantially increased (23,000pF), which may affect switching speed in certain circuit topologies.

Compliance and Regulatory Considerations:

All recommended substitutes are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement. The IRFP4332-203PBF, being classified as Obsolete, should be replaced with Active alternatives to ensure compliance with future regulatory updates and supply chain continuity.

Frequently Asked Questions (FAQ)

Q1: Can IRFP4332PBF directly replace IRFP4332-203PBF without circuit modification?

A: Yes. IRFP4332PBF is a direct equivalent with identical electrical specifications, gate drive requirements, and pin configuration. No circuit modification is required. Both parts are N-Channel MOSFETs rated for 250V, 57A with 33mOhm on-state resistance and ±30V gate voltage rating. The primary difference is product status: IRFP4332-203PBF is Obsolete while IRFP4332PBF is Active.

Q2: What is the difference between IRFP4332PBF and IRFP4332PBFXKMA1?

A: Both parts are manufactured by Infineon Technologies with identical electrical specifications. The designation suffix indicates different product variants or manufacturing batches. Both are Active products with ROHS3 compliance. Selection between these parts should be based on packaging availability and supply chain requirements rather than electrical performance.

Q3: Can IXYS parts (IXTH96N25T, IXFH100N25P, IXTQ100N25P, IXTX90N25L2) be used as direct substitutes?

A: IXYS parts meet the core electrical requirements (250V Vdss, N-Channel MOSFET, TO-247-3 compatible packages) but offer enhanced performance characteristics. IXTH96N25T, IXFH100N25P, and IXTQ100N25P provide higher current ratings (96A to 100A) and lower on-state resistance. These are suitable substitutes when the application can benefit from improved performance. IXTX90N25L2 offers significantly higher power dissipation (960W) but with substantially higher gate charge and input capacitance, which may affect switching characteristics.

Q4: What are the package compatibility considerations?

A: IRFP4332-203PBF uses TO-247AC packaging. Direct equivalents IRFP4332PBF and IRFP4332PBFXKMA1 also use TO-247AC. IXYS alternatives use TO-247 (IXTH), TO-3P, or PLUS247™-3 packages. While these are mechanically similar through-hole packages, PCB footprints and thermal interface requirements may differ. Verify PCB layout compatibility before substitution. TO-3P (IXTQ100N25P) has a different footprint than TO-247 variants and requires layout modification.

Q5: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. IRFP4332-203PBF has 150nC gate charge. IXTH96N25T has 114nC (lower, faster switching), while IXTX90N25L2 has 640nC (significantly higher, slower switching). Lower gate charge enables faster switching and reduced driver power dissipation. Higher gate charge requires more robust gate drive circuitry. Verify gate driver capability before selecting parts with substantially different gate charge specifications.

Q6: Are there thermal performance differences between substitutes?

A: Yes. IRFP4332-203PBF is rated for 360W power dissipation. IXTH96N25T provides 625W, IXFH100N25P and IXTQ100N25P provide 600W, and IXTX90N25L2 provides 960W. Higher power dissipation ratings indicate better thermal performance at the case temperature. Selection depends on application thermal requirements and heatsink design. Parts with higher current ratings typically have lower on-state resistance, reducing conduction losses and heat generation.

Q7: What is the significance of operating temperature range differences?

A: IRFP4332-203PBF operates from -40°C to 175°C (TJ). IXYS alternatives operate from -55°C to 150°C. The IRFP4332-203PBF has a higher maximum junction temperature (175°C vs. 150°C) but lower minimum temperature (-40°C vs. -55°C). For applications requiring operation above 150°C, Infineon parts are required. For applications requiring operation below -40°C, IXYS parts are required. Verify application temperature requirements before substitution.

Q8: How do input capacitance differences impact circuit design?

A: Input capacitance (Ciss) affects gate drive circuit design and switching speed. IRFP4332-203PBF has 5860pF. IXYS parts range from 6100pF to 23,000pF. Higher input capacitance requires more gate charge and may slow switching speed. IXTX90N25L2 with 23,000pF requires significantly more gate drive power. Verify gate driver output impedance and switching frequency compatibility before selecting parts with substantially different input capacitance.

Q9: What inventory considerations should guide part selection?

A: IRFP4332PBF has 19,000 units in stock (highest availability). IXTH96N25T has 5,525 units. IXFH100N25P has 2,300 units. IRFP4332PBFXKMA1 has 625 units. IXTX90N25L2 has 1,022 units. IXTQ100N25P has 1,632 units. For immediate production requirements, IRFP4332PBF provides the best supply security. For long-term programs, multiple qualified alternatives ensure supply chain resilience.

Q10: Are all substitutes ROHS3 compliant?

A: Yes. All recommended substitutes (IRFP4332PBF, IRFP4332PBFXKMA1, IXTH96N25T, IXFH100N25P, IXTQ100N25P, IXTX90N25L2) are ROHS3 compliant and REACH unaffected. The original IRFP4332-203PBF compliance status is not specified in the provided data. Substitution with ROHS3-compliant alternatives ensures regulatory alignment for new designs and ongoing production.

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