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IRFP3703 Equivalent & Substitute Parts
Part Overview
The IRFP3703 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 210A continuous drain current in the TO-247AC package. This device is classified as Obsolete, indicating it has reached end-of-life status and is no longer recommended for new designs. Finding equivalent or substitute parts is necessary to maintain design continuity, ensure supply chain availability, and transition to current product offerings that meet modern compliance requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 210 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8 | mOhm @ 76A, 10V |
| Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 209 | nC @ 10V |
| Power Dissipation (Max) | 3.8 / 230 | W (Ta) / W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-247-3 | Through Hole |
| Series | HEXFET® | — |
Substitute Part Grouping Explanation
Substitution of the IRFP3703 is determined by strict equivalence across the following electrical and mechanical parameters:
Electrical Equivalence Criteria:
- FET Type: N-Channel (required match)
- Drain to Source Voltage (Vdss): 30V (required match)
- Continuous Drain Current (Id): 210A @ 25°C (required match)
- On-State Resistance (Rds On): 2.8 mOhm @ 76A, 10V (required match)
- Gate Threshold Voltage (Vgs(th)): 4V @ 250µA (required match)
- Gate Charge (Qg): 209 nC @ 10V (required match)
- Power Dissipation: 3.8W (Ta), 230W (Tc) (required match)
- Operating Temperature Range: -55°C to 175°C (required match)
Mechanical Equivalence Criteria:
- Package Type: TO-247-3 (required match)
- Mounting Type: Through Hole (required match)
The IRFP3703PBF is identified as a direct substitute based on identical electrical specifications and package configuration. The primary distinction is packaging format (Tube vs. unspecified for the main part) and compliance status (RoHS3 Compliant vs. RoHS non-compliant).
Parameter Comparison
| Parameter | IRFP3703 | IRFP3703PBF | Match |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Yes |
| FET Type | N-Channel | N-Channel | Yes |
| Vdss | 30V | 30V | Yes |
| Id @ 25°C | 210A (Tc) | 210A (Tc) | Yes |
| Rds On (Max) | 2.8 mOhm @ 76A, 10V | 2.8 mOhm @ 76A, 10V | Yes |
| Vgs(th) (Max) | 4V @ 250µA | 4V @ 250µA | Yes |
| Gate Charge (Qg) | 209 nC @ 10V | 209 nC @ 10V | Yes |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) | 3.8W (Ta), 230W (Tc) | Yes |
| Operating Temperature | -55°C to 175°C | -55°C to 175°C | Yes |
| Package / Case | TO-247-3 | TO-247-3 | Yes |
| Mounting Type | Through Hole | Through Hole | Yes |
| Series | HEXFET® | HEXFET® | Yes |
| Packaging Format | Not specified | Tube | Different |
| Product Status | Obsolete | Not For New Designs | Different |
| RoHS Status | RoHS non-compliant | RoHS3 Compliant | Different |
Engineering Selection Recommendations
IRFP3703PBF as Direct Substitute:
The IRFP3703PBF provides complete electrical and mechanical equivalence to the IRFP3703. All critical parameters—voltage rating, current capacity, on-state resistance, gate charge, and thermal characteristics—are identical. Both devices are manufactured by Infineon Technologies within the HEXFET® series and utilize the same TO-247-3 through-hole package.
Compliance Consideration:
The IRFP3703PBF carries RoHS3 Compliant status, whereas the original IRFP3703 is RoHS non-compliant. This distinction is significant for applications subject to RoHS regulations. The IRFP3703PBF is classified as "Not For New Designs," indicating it remains available for legacy system support but is not recommended for new product development.
Product Status Impact:
Both the IRFP3703 (Obsolete) and IRFP3703PBF (Not For New Designs) reflect end-of-life positioning. For applications requiring long-term supply assurance or new design qualification, evaluation of current-generation N-Channel MOSFETs with equivalent electrical specifications and modern compliance certifications is recommended based on application requirements and supply chain strategy.
Frequently Asked Questions (FAQ)
Q: Can IRFP3703PBF be used as a direct replacement for IRFP3703 in existing designs?
A: Yes. The IRFP3703PBF is electrically and mechanically equivalent to the IRFP3703. All electrical parameters—Vdss, Id, Rds On, Vgs(th), gate charge, and power dissipation—are identical. Both use the TO-247-3 through-hole package. The primary difference is packaging format (Tube) and RoHS compliance status (RoHS3 Compliant).
Q: What is the difference between IRFP3703 and IRFP3703PBF?
A: The devices are electrically identical. The IRFP3703PBF is supplied in Tube packaging and carries RoHS3 Compliant certification, whereas the IRFP3703 is RoHS non-compliant. The "PBF" suffix indicates lead-free (Pb-free) construction. Both are classified as end-of-life products.
Q: Are there any thermal or electrical performance differences between these parts?
A: No. Thermal performance (3.8W at Ta, 230W at Tc) and all electrical characteristics are identical. Operating temperature range (-55°C to 175°C) is the same for both devices.
Q: What does "Not For New Designs" mean for the IRFP3703PBF?
A: This status indicates the part is available for existing system support and legacy applications but is not recommended for incorporation into new product designs. Infineon may discontinue production without advance notice.
Q: Is the TO-247-3 package compatible with existing PCB layouts designed for IRFP3703?
A: Yes. Both devices use the TO-247-3 through-hole package with identical pin configuration and mechanical dimensions. PCB layouts and thermal management designs require no modification.
Q: What is the significance of the "PBF" designation in IRFP3703PBF?
A: The "PBF" suffix denotes lead-free (Pb-free) construction, indicating compliance with RoHS directives that restrict hazardous substances in electronic components.
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