IRFP360LC N-Channel MOSFET 400V 23A Equivalent & Substitute Parts

Part Overview

The IRFP360LC is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 23A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and is designed for high-voltage switching applications requiring 280W maximum power dissipation.

The IRFP360LC is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing system maintenance, repair, and new design implementations where this part number is specified or functionally required.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	400	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
On-State Resistance (Rds On Max) @ 14A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	110	nC
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ 25V	3400	pF
Power Dissipation (Max)	280	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFP360LC are identified based on electrical and mechanical compatibility within the constraints of the provided parameters. The substitution logic is structured as follows:

Parametric Equivalent Classification: Parts that maintain identical or functionally equivalent electrical specifications across all critical parameters (Vdss, Id, Rds On, Vgs(th), Qg, Ciss, power dissipation, and operating temperature range) while sharing the same package type (TO-247-3) are classified as parametric equivalents. These parts are direct functional replacements.

Manufacturer Recommended Classification: Parts that exceed the electrical specifications of the main part while maintaining the same package type and operating temperature range are classified as manufacturer recommended substitutes. These parts provide enhanced performance headroom (higher voltage rating, higher current capacity, or lower on-state resistance) and are suitable for applications where the original part is no longer available.

Key Parameters Determining Substitution:

Drain-to-Source Voltage (Vdss): Must equal or exceed 400V
Continuous Drain Current (Id): Must equal or exceed 23A
On-State Resistance (Rds On): Must not exceed 200mOhm at specified gate voltage
Package Type: Must be TO-247-3 or compatible through-hole variant
Operating Temperature Range: Must encompass -55°C to 150°C
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)

Parameter Comparison

Parameter	IRFP360LC	IRFP360LCPBF	IXFH30N50P
Manufacturer	Vishay Siliconix	Vishay Siliconix	IXYS
Drain-to-Source Voltage (Vdss)	400V	400V	500V
Continuous Drain Current (Id) @ 25°C	23A (Tc)	23A (Tc)	30A (Tc)
On-State Resistance (Rds On Max)	200mOhm @ 14A, 10V	200mOhm @ 14A, 10V	200mOhm @ 15A, 10V
Gate Threshold Voltage (Vgs(th) Max)	4V @ 250µA	4V @ 250µA	5V @ 4mA
Gate Charge (Qg Max) @ 10V	110nC	110nC	70nC
Maximum Gate Voltage (Vgs Max)	±30V	±30V	±30V
Input Capacitance (Ciss Max) @ 25V	3400pF	3400pF	4150pF
Power Dissipation (Max)	280W (Tc)	280W (Tc)	460W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Package Type	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	RoHS3 Compliant	RoHS3 Compliant

Engineering Selection Recommendations

IRFP360LCPBF (Parametric Equivalent): The IRFP360LCPBF is a direct parametric equivalent to the IRFP360LC. Both parts share identical electrical specifications across all critical parameters and are housed in the same TO-247-3 package. The primary distinction is product status: IRFP360LCPBF is active, whereas IRFP360LC is obsolete. IRFP360LCPBF is RoHS3 compliant, providing regulatory advantage for new designs and system updates. This part is the preferred selection for direct replacement applications where the original IRFP360LC specification is required.

IXFH30N50P (Manufacturer Recommended Substitute): The IXFH30N50P is an active, RoHS3-compliant N-Channel MOSFET manufactured by IXYS. This device exceeds the electrical specifications of the IRFP360LC in three key areas: drain-to-source voltage (500V vs. 400V), continuous drain current (30A vs. 23A), and power dissipation (460W vs. 280W). The on-state resistance remains equivalent at 200mOhm. The IXFH30N50P is housed in a TO-247-3 through-hole package and operates across the same temperature range (-55°C to 150°C). This part is suitable for applications where the IRFP360LC is specified and enhanced performance margin is acceptable. The higher voltage and current ratings provide design flexibility for systems requiring increased headroom or future performance scaling.

Both substitute parts maintain compatibility with existing through-hole PCB layouts and thermal management infrastructure designed for the IRFP360LC.

Frequently Asked Questions (FAQ)

Q: Can IRFP360LCPBF be used as a direct replacement for IRFP360LC?

A: Yes. IRFP360LCPBF is a parametric equivalent with identical electrical specifications and package type. The parts are functionally interchangeable. IRFP360LCPBF is preferred because it is active and RoHS3 compliant, whereas IRFP360LC is obsolete and RoHS non-compliant.

Q: What are the advantages of using IXFH30N50P over IRFP360LCPBF?

A: IXFH30N50P provides higher voltage rating (500V vs. 400V), higher current capacity (30A vs. 23A), and higher power dissipation capability (460W vs. 280W). These enhanced specifications offer greater design margin and performance headroom. However, IXFH30N50P has slightly higher input capacitance (4150pF vs. 3400pF) and higher gate threshold voltage (5V vs. 4V), which may affect gate drive circuit design.

Q: Are all substitute parts housed in the same package?

A: Yes. IRFP360LC, IRFP360LCPBF, and IXFH30N50P are all housed in TO-247-3 through-hole packages. Pin configuration and PCB footprint compatibility are maintained across all three parts.

Q: What is the difference between IRFP360LC and IRFP360LCPBF packaging?

A: IRFP360LC is supplied in standard packaging, while IRFP360LCPBF is supplied in tube packaging. Both parts use the same TO-247-3 through-hole package type. The packaging difference affects handling and storage but does not impact electrical performance or PCB integration.

Q: Can IXFH30N50P be used in applications originally designed for IRFP360LC?

A: Yes. IXFH30N50P exceeds the electrical specifications of IRFP360LC and maintains the same package type and operating temperature range. The higher voltage and current ratings make it suitable for IRFP360LC applications. Gate drive circuit design may require adjustment due to differences in gate threshold voltage and gate charge specifications.

Q: What is the RoHS compliance status of these parts?

A: IRFP360LC is RoHS non-compliant. IRFP360LCPBF and IXFH30N50P are both RoHS3 compliant. For new designs and systems subject to RoHS regulations, IRFP360LCPBF or IXFH30N50P are required.

Q: Are there any thermal management differences between these parts?

A: IRFP360LC and IRFP360LCPBF have identical power dissipation ratings (280W). IXFH30N50P has higher power dissipation capability (460W), which may allow operation at higher current levels or reduced thermal management requirements in some applications. All three parts operate across the same temperature range (-55°C to 150°C).

Q: What is the gate charge difference between IRFP360LC and IXFH30N50P?

A: IRFP360LC has a maximum gate charge of 110nC at 10V, while IXFH30N50P has a maximum gate charge of 70nC at 10V. The lower gate charge of IXFH30N50P results in faster switching characteristics and may reduce gate drive power requirements.

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