IRFP360 N-Channel MOSFET 400V 23A Equivalent & Substitute Parts

Part Overview

The IRFP360 is an N-Channel MOSFET rated for 400V drain-to-source voltage with 23A continuous drain current at 25°C, housed in a TO-247-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The IRFP360 delivers 280W maximum power dissipation and operates across a temperature range of -55°C to 150°C junction temperature.

Substiute Parts

IRFP360

Vishay SiliconixIn Stock: 1667IRFP360 Datasheet

Current PartRFQ

IRFP360PBF

Vishay SiliconixIn Stock: 18336IRFP360PBF Datasheet

DirectRFQ

IXFH30N50P

IXYSIn Stock: 1960IXFH30N50P Datasheet

MFR RecommendedRFQ

IXTH30N50L2

IXYSIn Stock: 2069IXTH30N50L2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFP360 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-source voltage (Vdss) must equal or exceed 400V
• Continuous drain current (Id) must equal or exceed 23A at 25°C
• On-state resistance (Rds On) must not exceed 200 mOhm at specified gate-source voltage
• Gate charge (Qg) and input capacitance (Ciss) must be compatible with existing gate drive circuits
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting type must be through-hole
• Package must be TO-247-3 or equivalent footprint
• Pin configuration must support direct board-level replacement

Compliance Criteria:

• RoHS3 compliance preferred for new designs
• REACH unaffected status required

The substitute parts listed below meet these criteria with electrical parameters that maintain or exceed the IRFP360 performance envelope.

Parameter Comparison

Engineering Selection Recommendations

Direct Replacement (Identical Electrical Performance):

IRFP360PBF is the direct equivalent to IRFP360, offering identical electrical specifications including 400V Vdss, 23A continuous drain current, and 280W power dissipation. IRFP360PBF is manufactured by Vishay Siliconix and maintains the same TO-247-3 package footprint. The primary distinction is product status: IRFP360PBF is active and ROHS3 compliant, whereas the original IRFP360 is obsolete and non-compliant. IRFP360PBF is suitable for direct board-level substitution without circuit modification.

Enhanced Performance Alternatives:

IXTH30N50L2 and IXFH30N50P are manufactured by IXYS and provide enhanced electrical performance relative to the IRFP360. Both devices feature 500V Vdss (100V higher rating) and 30A continuous drain current (7A higher rating), enabling operation in higher-voltage applications. Both maintain 200 mOhm on-state resistance and TO-247-3 package compatibility. IXTH30N50L2 is part of the Linear L2™ series with 400W power dissipation, while IXFH30N50P is part of the HiPerFET™ series with 460W power dissipation. Both devices are ROHS3 compliant and active products.

Gate charge characteristics differ between alternatives: IRFP360PBF and IXTH30N50L2 exhibit higher gate charge (210 nC and 240 nC respectively), while IXFH30N50P exhibits significantly lower gate charge (70 nC), resulting in faster switching performance and reduced gate drive power requirements.

Frequently Asked Questions (FAQ)

Q: Can IRFP360PBF be used as a direct replacement for IRFP360?

A: Yes. IRFP360PBF is electrically and mechanically identical to IRFP360, with matching Vdss (400V), Id (23A), Rds On (200 mOhm), and power dissipation (280W). Both use TO-247-3 packaging. The primary difference is product status: IRFP360PBF is active and ROHS3 compliant. No circuit modifications are required.

Q: What are the advantages of IXTH30N50L2 and IXFH30N50P over IRFP360?

A: Both IXYS alternatives provide higher voltage rating (500V vs. 400V) and higher current rating (30A vs. 23A), enabling use in higher-power applications. Both maintain identical on-state resistance (200 mOhm) and are ROHS3 compliant active products. IXFH30N50P offers significantly lower gate charge (70 nC vs. 210 nC), enabling faster switching and reduced gate drive power.

Q: Are IXTH30N50L2 and IXFH30N50P pin-compatible with IRFP360?

A: Yes. Both IXYS devices use TO-247-3 packaging with identical pin configuration and footprint to IRFP360, enabling direct board-level substitution without PCB modification.

Q: Which substitute part should be selected for new designs?

A: IRFP360PBF is recommended for applications requiring identical electrical performance to the original IRFP360. IXTH30N50L2 or IXFH30N50P are recommended for new designs where higher voltage or current ratings provide design margin or enable higher-power operation. All three alternatives are active products with ROHS3 compliance.

Q: Does gate charge difference between substitutes affect circuit design?

A: Gate charge affects switching speed and gate drive power requirements. IXFH30N50P exhibits lower gate charge (70 nC) compared to IRFP360PBF and IXTH30N50L2 (210 nC and 240 nC respectively), resulting in faster switching transitions and lower gate drive circuit power dissipation. Existing gate drive circuits designed for IRFP360 will operate with all three substitutes, though IXFH30N50P may enable improved switching performance.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts operate across -55°C to 150°C junction temperature, matching the IRFP360 specification and maintaining compatibility with existing thermal management designs.