IRFP354 Equivalent & Substitute Parts

Part Overview

The IRFP354 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 450 V drain-to-source voltage and 14 A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is designed for high-voltage switching applications requiring 190 W maximum power dissipation. The part maintains Active product status with 1006 units in current inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. The IRFP354 operates across a temperature range of -55°C to 150°C (TJ) and is classified as RoHS non-compliant.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	450	V
Continuous Drain Current (Id) @ 25°C	14	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	350 mOhm @ 8.4 A, 10 V	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250 µA
Gate Charge (Qg Max) @ Vgs	160	nC @ 10 V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	2700	pF @ 25 V
Power Dissipation (Max)	190	W (Tc)
Operating Temperature Range (TJ)	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IRFP354 is determined by the following electrical and mechanical criteria:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 450 V
Continuous Drain Current (Id) must equal or exceed 14 A at 25°C
On-State Resistance (Rds On) must not exceed the specified maximum at rated conditions
Gate Threshold Voltage (Vgs(th)) must remain within acceptable switching parameters
Maximum Gate Voltage (Vgs Max) must accommodate the drive circuit voltage
Operating Temperature Range must span -55°C to 150°C (TJ)

Mechanical Compatibility Requirements:

Mounting Type: Through Hole
Package / Case: TO-247-3 or equivalent TO-247 variant
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

All three substitute parts meet or exceed the electrical performance envelope of the IRFP354 while maintaining TO-247 package compatibility. The substitute parts operate within the same temperature range and support equivalent gate drive voltages.

Parameter Comparison

Parameter	IRFP354 (Main)	IXFH20N50P3	IXTH24N50L	IXTH450P2
Manufacturer	Vishay Siliconix	IXYS	IXYS	IXYS
Drain-to-Source Voltage (Vdss)	450 V	500 V	500 V	500 V
Continuous Drain Current (Id) @ 25°C	14 A (Tc)	20 A (Tc)	24 A (Tc)	16 A (Tc)
Rds On (Max) @ Id, Vgs	350 mOhm @ 8.4 A, 10 V	300 mOhm @ 10 A, 10 V	300 mOhm @ 500 mA, 20 V	330 mOhm @ 8 A, 10 V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 V @ 250 µA	5 V @ 1.5 mA	5 V @ 250 µA	4.5 V @ 250 µA
Gate Charge (Qg Max) @ Vgs	160 nC @ 10 V	36 nC @ 10 V	160 nC @ 20 V	43 nC @ 10 V
Maximum Gate Voltage (Vgs Max)	±20 V	±30 V	±30 V	±30 V
Input Capacitance (Ciss Max) @ Vds	2700 pF @ 25 V	1800 pF @ 25 V	2500 pF @ 25 V	2530 pF @ 25 V
Power Dissipation (Max)	190 W (Tc)	380 W (Tc)	400 W (Tc)	300 W (Tc)
Operating Temperature Range (TJ)	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)

Engineering Selection Recommendations

IXFH20N50P3 (IXYS)

The IXFH20N50P3 provides 500 V Vdss rating with 20 A continuous drain current, exceeding the IRFP354 performance envelope. This device features reduced gate charge (36 nC versus 160 nC), enabling faster switching characteristics. The part is ROHS3 compliant and REACH unaffected, offering improved environmental compliance compared to the non-compliant IRFP354. Inventory availability is substantial at 4600 units. The HiPerFET™ and Polar3™ series designation indicates optimized performance characteristics for high-voltage applications.

IXTH24N50L (IXYS)

The IXTH24N50L delivers the highest current rating at 24 A continuous drain current with 500 V Vdss, providing maximum performance headroom. Power dissipation capability reaches 400 W (Tc), significantly exceeding the IRFP354. This device is ROHS3 compliant and REACH unaffected. Inventory availability is exceptional at 688,100 units, indicating widespread market adoption. The Linear series designation reflects optimized on-state resistance characteristics. Gate charge specification matches the IRFP354 at 160 nC, supporting equivalent switching speed profiles when driven at 20 V.

IXTH450P2 (IXYS)

The IXTH450P2 provides 500 V Vdss with 16 A continuous drain current, closely matching the IRFP354 current rating while offering enhanced voltage margin. On-state resistance of 330 mOhm at 8 A, 10 V is comparable to the IRFP354 specification. Gate charge is significantly reduced to 43 nC at 10 V, enabling improved switching performance. The part is ROHS3 compliant and REACH unaffected. Inventory availability is 5480 units. The PolarP2™ series designation indicates optimized performance for power conversion applications.

All three substitute parts maintain TO-247-3 package compatibility, through-hole mounting, and the -55°C to 150°C operating temperature range of the IRFP354. Selection among these substitutes depends on specific application requirements for current rating, power dissipation, switching speed, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXFH20N50P3 directly replace the IRFP354 in existing circuit designs?

A: The IXFH20N50P3 is electrically and mechanically compatible with the IRFP354. Both devices use TO-247-3 packaging and through-hole mounting. The IXFH20N50P3 exceeds the IRFP354 in Vdss (500 V versus 450 V), continuous drain current (20 A versus 14 A), and power dissipation (380 W versus 190 W). The reduced gate charge (36 nC versus 160 nC) may require gate drive circuit evaluation to ensure compatibility with existing driver circuits.

Q: What is the primary difference between the IXTH24N50L and IXTH450P2?

A: The IXTH24N50L is rated for 24 A continuous drain current with 400 W power dissipation, while the IXTH450P2 is rated for 16 A continuous drain current with 300 W power dissipation. Both devices share 500 V Vdss rating and TO-247-3 packaging. The IXTH24N50L provides higher current capacity and thermal headroom, while the IXTH450P2 offers on-state resistance and gate charge characteristics more closely aligned with the IRFP354.

Q: Are all substitute parts RoHS compliant?

A: The IRFP354 is RoHS non-compliant. All three substitute parts (IXFH20N50P3, IXTH24N50L, and IXTH450P2) are ROHS3 compliant and REACH unaffected, providing improved environmental compliance for new designs and applications subject to regulatory requirements.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IRFP354 specifies 160 nC at 10 V. The IXFH20N50P3 specifies 36 nC at 10 V, enabling faster switching with lower gate drive power. The IXTH24N50L specifies 160 nC at 20 V, matching the IRFP354 charge requirement when driven at higher voltage. The IXTH450P2 specifies 43 nC at 10 V, providing intermediate switching speed. Gate drive circuit design must accommodate these specifications.

Q: What is the significance of the TO-247-3 package designation?

A: The TO-247-3 package is a through-hole configuration with three leads (Gate, Drain, Source) designed for high-power applications. All substitute parts maintain this package standard, ensuring mechanical and thermal compatibility with existing PCB layouts and heat sink mounting arrangements. The package supports the thermal requirements of these high-current devices through direct contact with external heat dissipation structures.

Q: Can the IXTH450P2 be used in applications requiring the full 14 A rating of the IRFP354?

A: The IXTH450P2 is rated for 16 A continuous drain current at 25°C, exceeding the IRFP354 requirement of 14 A. The device is suitable for applications requiring the full IRFP354 current rating. On-state resistance of 330 mOhm at 8 A, 10 V is comparable to the IRFP354 specification of 350 mOhm at 8.4 A, 10 V, providing equivalent conduction losses at rated current.

Q: What inventory considerations apply to these substitute parts?

A: The IRFP354 has 1006 units in current inventory. The IXFH20N50P3 has 4600 units available. The IXTH24N50L has 688,100 units available, indicating the highest market availability. The IXTH450P2 has 5480 units available. Inventory levels may influence selection for high-volume production requirements or long-term supply chain planning.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message