IRFP2907ZPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP2907ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 90A continuous drain current at 25°C. This device features the HEXFET® series technology in a Through Hole TO-247AC package. The part is currently classified as Obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and procurement continuity.

Substiute Parts

IRFP2907ZPBF
Infineon TechnologiesIn Stock: 1928IRFP2907ZPBF Datasheet
IRFP2907ZPBF
Current Part
IRFP3077PBFXKMA1
Infineon TechnologiesIn Stock: 953IRFP3077PBFXKMA1 Datasheet
IRFP3077PBFXKMA1
MFR Recommended
IRFP3077PBF
Infineon TechnologiesIn Stock: 16874IRFP3077PBF Datasheet
IRFP3077PBF
MFR Recommended
IRFP4368PBF
Infineon TechnologiesIn Stock: 26524IRFP4368PBF Datasheet
IRFP4368PBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 90 A
On-State Resistance (Rds On Max) @ Id, Vgs 4.5 mOhm @ 90A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 270 nC @ 10V
Power Dissipation (Max) 310 W
Operating Temperature Range -55 to 175 °C
Package Type TO-247-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IRFP2907ZPBF is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 75V minimum
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Package Type: TO-247AC (TO-247-3)
  • Mounting Type: Through Hole
  • Operating Temperature Range: -55°C to 175°C minimum

Performance Parameters (Allowable Variation):

  • Continuous Drain Current (Id): Equal to or greater than 90A
  • On-State Resistance (Rds On): Equal to or lower than 4.5 mOhm
  • Gate Charge (Qg): Equal to or lower than 270 nC
  • Power Dissipation: Equal to or greater than 310W

The substitute parts identified (IRFP3077PBFXKMA1, IRFP3077PBF, and IRFP4368PBF) meet or exceed all mandatory matching criteria while providing equal or improved performance characteristics. These parts maintain electrical and mechanical compatibility with the original IRFP2907ZPBF design envelope.

Parameter Comparison

Parameter IRFP2907ZPBF IRFP3077PBFXKMA1 IRFP3077PBF IRFP4368PBF
Vdss (V) 75 75 75 75
Id @ 25°C (A) 90 120 120 195
Rds On Max (mOhm) 4.5 @ 90A, 10V 3.3 @ 75A, 10V 3.3 @ 75A, 10V 1.85 @ 195A, 10V
Vgs(th) Max (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA
Qg Max (nC) 270 @ 10V 220 @ 10V 220 @ 10V 570 @ 10V
Power Dissipation Max (W) 310 340 340 520
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active Discontinued at DiGi Electronics
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IRFP3077PBF

The IRFP3077PBF is the recommended primary substitute for the obsolete IRFP2907ZPBF. This part maintains full electrical and mechanical compatibility while offering improved performance characteristics. The IRFP3077PBF is classified as Active product status, ensuring long-term availability and supply chain continuity. It provides 120A continuous drain current (33% higher than the original), reduced on-state resistance (3.3 mOhm versus 4.5 mOhm), and lower gate charge (220 nC versus 270 nC). All compliance certifications match the original part: ROHS3 Compliant, REACH Unaffected, and EAR99 classification.

Secondary Substitute: IRFP3077PBFXKMA1

The IRFP3077PBFXKMA1 is an equivalent variant of the IRFP3077PBF with identical electrical specifications. This part is supplied in Tube packaging and maintains Active product status. Selection between IRFP3077PBF and IRFP3077PBFXKMA1 depends on packaging requirements and procurement preferences.

Alternative Substitute: IRFP4368PBF

The IRFP4368PBF provides maximum performance headroom with 195A continuous drain current, 1.85 mOhm on-state resistance, and 520W power dissipation. This part is suitable for applications requiring enhanced current handling and thermal performance. However, the IRFP4368PBF is classified as Discontinued at DiGi Electronics, which may impact long-term availability. Gate charge is significantly higher (570 nC), which may affect switching speed in gate-drive-limited applications.

Frequently Asked Questions (FAQ)

Q: Can IRFP3077PBF directly replace IRFP2907ZPBF in existing designs?

A: Yes. The IRFP3077PBF maintains identical voltage rating (75V), package type (TO-247-3), and pin configuration. The improved current rating (120A versus 90A) and reduced on-state resistance (3.3 mOhm versus 4.5 mOhm) provide enhanced performance without requiring circuit modifications.

Q: What is the difference between IRFP3077PBF and IRFP3077PBFXKMA1?

A: Both parts have identical electrical specifications and performance characteristics. The primary difference is packaging: IRFP3077PBF is supplied in Tube packaging, while IRFP3077PBFXKMA1 is also supplied in Tube packaging. Selection depends on procurement quantity requirements and supplier availability.

Q: Why is IRFP4368PBF listed as a substitute if it is discontinued?

A: The IRFP4368PBF is included as an alternative option for applications requiring maximum current handling (195A) and power dissipation (520W). Current inventory availability is reported at 26,494 pieces. However, discontinued status indicates no future production, making it suitable only for applications where existing stock can support long-term requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts (IRFP3077PBFXKMA1, IRFP3077PBF, and IRFP4368PBF) are ROHS3 Compliant and REACH Unaffected, matching the compliance status of the original IRFP2907ZPBF.

Q: What is the impact of higher gate charge in IRFP4368PBF?

A: The IRFP4368PBF has gate charge of 570 nC compared to 270 nC in the original part. Higher gate charge requires greater gate drive energy and may increase switching time in applications with limited gate drive capability. This parameter should be evaluated against specific gate driver specifications.

Q: Can these parts be used in parallel configurations?

A: All substitute parts maintain identical gate threshold voltage (4V @ 250µA) and similar on-state resistance characteristics, supporting parallel operation. However, thermal management and gate drive distribution must be verified for specific application requirements.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts operate across the identical temperature range of -55°C to 175°C (TJ), matching the original IRFP2907ZPBF specification.

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