IRFP264NPBF Equivalent & Substitute Parts

Part Overview

The IRFP264NPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 250V drain-to-source voltage and 44A continuous drain current in a Through Hole TO-247AC package. This device is classified as Obsolete product status. Identification of equivalent and substitute parts is necessary due to obsolescence, ensuring design continuity and supply chain availability for applications requiring N-Channel MOSFET functionality within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	250	V
Current - Continuous Drain (Id) @ 25°C	44	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	60	mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	210	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	3860	pF @ 25V
Power Dissipation (Max)	380	W (Tc)
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFP264NPBF are selected based on electrical and mechanical compatibility within the following criteria:

Mandatory Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Package / Case: TO-247-3
Mounting Type: Through Hole

Allowable Variation Parameters:

Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 44A
Rds On (Max) @ Id, Vgs: Equal to or less than 60mOhm
Power Dissipation (Max): Equal to or greater than 380W
Operating Temperature Range: Must encompass or exceed -55°C to 175°C
Gate Charge (Qg): May vary based on current rating
Input Capacitance (Ciss): May vary based on current rating

All substitute parts listed maintain N-Channel MOSFET topology with 250V Vdss rating and TO-247AC package configuration, ensuring mechanical and electrical interchangeability for the specified application envelope.

Parameter Comparison

Parameter	IRFP264NPBF (Main)	IRFP4229PBF	IRFP4332PBF	IRFP4768PBF	Unit
Manufacturer	Vishay Siliconix	Infineon Technologies	Infineon Technologies	Infineon Technologies	—
Product Status	Obsolete	Active	Active	Active	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	250	250	250	250	V
Current - Continuous Drain (Id) @ 25°C	44	44	57	93	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	10	V
Rds On (Max) @ Id, Vgs	60 @ 25A, 10V	46 @ 26A, 10V	33 @ 35A, 10V	17.5 @ 56A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	5 @ 250µA	5 @ 250µA	5 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	210 @ 10V	110 @ 10V	150 @ 10V	270 @ 10V	nC
Vgs (Max)	±20	±30	±30	±20	V
Input Capacitance (Ciss) (Max) @ Vds	3860 @ 25V	4560 @ 25V	5860 @ 25V	10880 @ 50V	pF
Power Dissipation (Max)	380	310	360	520	W (Tc)
Operating Temperature	-55 to 175	-40 to 175	-40 to 175	-55 to 175	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	—
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IRFP4229PBF (Direct Equivalent)

The IRFP4229PBF is an Active product manufactured by Infineon Technologies with identical electrical ratings to the IRFP264NPBF: 250V Vdss and 44A continuous drain current. This part provides direct functional equivalence with improved on-resistance characteristics (46mOhm versus 60mOhm) and lower gate charge (110nC versus 210nC). The IRFP4229PBF is suitable for applications requiring direct pin-compatible replacement with enhanced switching performance. Operating temperature range is -40°C to 175°C, which covers the primary operating envelope of the original part. ROHS3 compliance and MSL 1 rating match the original specification.

IRFP4332PBF (Higher Current Capability)

The IRFP4332PBF is an Active product manufactured by Infineon Technologies rated for 57A continuous drain current at 250V Vdss. This part provides increased current handling capacity with superior on-resistance (33mOhm) and maintains the same 10V drive voltage specification. Power dissipation is rated at 360W, which is lower than the original 380W but remains within acceptable thermal design margins for most applications. Operating temperature range is -40°C to 175°C. This part is suitable for applications where increased current margin or reduced conduction losses are beneficial.

IRFP4768PBF (Maximum Performance)

The IRFP4768PBF is an Active product manufactured by Infineon Technologies rated for 93A continuous drain current at 250V Vdss. This part provides the highest current capacity and lowest on-resistance (17.5mOhm) among available substitutes. Power dissipation is rated at 520W, exceeding the original specification. Operating temperature range is -55°C to 175°C, matching the original part's lower temperature limit. This part is suitable for applications requiring maximum thermal headroom, lowest conduction losses, or future design margin expansion.

All substitute parts maintain ROHS3 compliance, MSL 1 rating, and TO-247-3 package configuration. Selection between substitutes depends on application current requirements, thermal design constraints, and switching frequency considerations.

Frequently Asked Questions (FAQ)

Q: Can IRFP4229PBF be used as a direct replacement for IRFP264NPBF?

A: Yes. The IRFP4229PBF is electrically and mechanically compatible with the IRFP264NPBF. Both devices are rated for 250V Vdss, 44A continuous drain current, and use the TO-247-3 package. The IRFP4229PBF offers improved performance characteristics with lower on-resistance and gate charge.

Q: What is the difference between IRFP4332PBF and IRFP4768PBF?

A: Both parts are rated for 250V Vdss but differ in current capacity and on-resistance. The IRFP4332PBF is rated for 57A with 33mOhm on-resistance, while the IRFP4768PBF is rated for 93A with 17.5mOhm on-resistance. The IRFP4768PBF provides lower conduction losses and higher thermal capacity.

Q: Are all substitute parts in the same package?

A: Yes. All substitute parts use the TO-247-3 package with Through Hole mounting, ensuring mechanical compatibility with the original IRFP264NPBF footprint.

Q: What is the operating temperature range difference between substitutes?

A: The IRFP264NPBF and IRFP4768PBF both operate from -55°C to 175°C. The IRFP4229PBF and IRFP4332PBF operate from -40°C to 175°C. For applications requiring -55°C operation, IRFP4768PBF is the appropriate selection.

Q: Do all substitute parts meet RoHS compliance?

A: Yes. All substitute parts listed are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the original part's environmental specifications.

Q: How does gate charge affect device selection?

A: Gate charge determines switching speed and driver circuit requirements. The IRFP264NPBF has 210nC gate charge. The IRFP4229PBF has lower gate charge (110nC), enabling faster switching. The IRFP4768PBF has higher gate charge (270nC), requiring more driver current but providing higher current capacity.

Q: Can IRFP4768PBF be used in all applications designed for IRFP264NPBF?

A: The IRFP4768PBF is electrically and mechanically compatible with the IRFP264NPBF. However, the higher gate charge and input capacitance require verification that the gate driver circuit can supply the necessary charge and current. Thermal design may also require adjustment due to different power dissipation characteristics.

Q: What is the significance of Rds On specifications at different current levels?

A: On-resistance varies with current and gate voltage. The IRFP264NPBF specifies 60mOhm at 25A and 10V gate voltage. Substitute parts specify on-resistance at their respective rated currents. Lower on-resistance reduces conduction losses and heat generation during operation.

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