IRFP260 N-Channel MOSFET 200V 46A TO-247 Equivalent & Substitute Parts

Part Overview

The IRFP260 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 200V drain-to-source voltage with 46A continuous drain current at 25°C. This device is housed in a TO-247 through-hole package and is designed for high-power switching applications. The IRFP260 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations.

Substiute Parts

IRFP260
IXYSIn Stock: 2021IRFP260 Datasheet
IRFP260
Current Part
IRFP260MPBF
Infineon TechnologiesIn Stock: 40389IRFP260MPBF Datasheet
IRFP260MPBF
Direct
IRFP260NPBF
Infineon TechnologiesIn Stock: 65404IRFP260NPBF Datasheet
IRFP260NPBF
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IRFP260PBF
Vishay SiliconixIn Stock: 1532IRFP260PBF Datasheet
IRFP260PBF
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STW75NF20
STMicroelectronicsIn Stock: 1453STW75NF20 Datasheet
STW75NF20
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 46 A
On-State Resistance (Rds On) @ 28A, 10V 55 mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 230 nC
Power Dissipation (Max) 280 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFP260 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute devices must maintain a Vdss rating of 200V or greater to ensure safe operation in the original application circuit.

Current Rating: Substitute devices must support a continuous drain current (Id) of at least 46A at 25°C. Devices with higher current ratings are acceptable as they provide design margin.

On-State Resistance (Rds On): The maximum Rds On specification at the specified gate-source voltage (10V) and current level (28A) determines switching losses and thermal performance. Substitute devices with equal or lower Rds On values maintain or improve efficiency.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute devices with similar or lower gate charge values are compatible.

Power Dissipation: The maximum power dissipation rating must be sufficient for the application thermal environment.

Package Compatibility: All substitute devices must use through-hole TO-247 package variants (TO-247-3, TO-247AC, TO-247AD) to ensure mechanical and thermal interface compatibility with existing PCB designs and heatsinks.

Operating Temperature Range: Substitute devices must support the application's operating temperature requirements. The IRFP260 operates from -55°C to 150°C; substitute devices with equal or extended ranges are acceptable.

Parameter Comparison

Parameter IRFP260 IRFP260MPBF IRFP260NPBF IRFP260PBF STW75NF20
Manufacturer IXYS Infineon Technologies Infineon Technologies Vishay Siliconix STMicroelectronics
Vdss (V) 200 200 200 200 200
Id @ 25°C (A) 46 50 50 46 75
Rds On @ 28A, 10V (mOhm) 55 40 40 55 34
Vgs(th) @ 250µA (V) 4 4 4 4 4
Qg @ 10V (nC) 230 234 234 230 84
Power Dissipation (W) 280 300 300 280 190
Operating Temperature (°C) -55 to 150 -55 to 175 -55 to 175 -55 to 150 -50 to 150
Package TO-247 (IXTH) TO-247AC TO-247AC TO-247AC TO-247-3
Product Status Obsolete Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFP260MPBF (Infineon Technologies): This device is an active, ROHS3-compliant substitute with improved electrical performance. It provides 50A continuous drain current versus the original 46A, with reduced on-state resistance (40mOhm versus 55mOhm), resulting in lower switching losses. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. The TO-247AC package is mechanically compatible with the original TO-247 footprint. This device is suitable for direct replacement in applications requiring enhanced performance and regulatory compliance.

IRFP260NPBF (Infineon Technologies): This active, ROHS3-compliant device offers identical electrical specifications to the IRFP260MPBF with 50A continuous current and 40mOhm on-state resistance. The extended temperature range and improved power dissipation rating (300W) support demanding thermal environments. The TO-247AC package maintains mechanical compatibility. This device is suitable for applications requiring active product status and compliance certification.

IRFP260PBF (Vishay Siliconix): This active, ROHS3-compliant device maintains the original electrical specifications of the IRFP260 with 46A continuous current and 55mOhm on-state resistance. The TO-247AC package is mechanically compatible. This device provides a direct electrical equivalent with active product status and regulatory compliance, suitable for applications where performance characteristics must remain unchanged.

STW75NF20 (STMicroelectronics): This active, ROHS3-compliant device provides significantly higher current capability (75A) and lower on-state resistance (34mOhm), resulting in reduced thermal dissipation. However, the maximum power dissipation rating is lower (190W versus 280W), and the gate charge is substantially reduced (84nC versus 230nC), which affects switching speed and driver circuit compatibility. The TO-247-3 package is mechanically compatible. This device is suitable for applications where higher current capacity and lower conduction losses are required, provided the reduced power dissipation rating and gate charge characteristics are compatible with the circuit design.

Frequently Asked Questions (FAQ)

Q: Can the IRFP260MPBF and IRFP260NPBF be used interchangeably with the original IRFP260?

A: Yes. Both devices meet or exceed the electrical specifications of the IRFP260 across voltage, current, and thermal parameters. The TO-247AC package is mechanically compatible with the original TO-247 footprint. Both devices are active products with ROHS3 compliance, making them suitable for direct replacement.

Q: What is the difference between IRFP260MPBF and IRFP260NPBF?

A: Both devices share identical electrical specifications: 200V Vdss, 50A continuous current, 40mOhm on-state resistance, and 300W power dissipation. The primary difference is manufacturer designation and packaging format (Tube). Both are active, ROHS3-compliant products suitable for equivalent substitution.

Q: Is the STW75NF20 a direct replacement for the IRFP260?

A: The STW75NF20 is electrically compatible in terms of voltage rating (200V) and exceeds the current requirement (75A versus 46A). However, it has lower on-state resistance (34mOhm), significantly lower gate charge (84nC versus 230nC), and a lower maximum power dissipation rating (190W versus 280W). The reduced gate charge may require driver circuit adjustment. The lower power dissipation rating must be verified against application thermal requirements. This device is suitable for applications where higher current capacity and lower conduction losses are beneficial and thermal constraints are not limiting.

Q: Are all substitute devices available in the same package as the original IRFP260?

A: All substitute devices use through-hole TO-247 package variants (TO-247-3 or TO-247AC). These packages are mechanically and thermally compatible with the original TO-247 footprint and heatsink interfaces. Pin configurations remain identical across all variants.

Q: What is the significance of the reduced gate charge in the STW75NF20?

A: Gate charge (Qg) determines the amount of charge required to switch the device on and off. The STW75NF20 has a gate charge of 84nC compared to 230nC in the IRFP260. Lower gate charge results in faster switching transitions and reduced driver circuit power requirements. However, the driver circuit must be verified to ensure it can deliver the required gate current within the specified switching time window.

Q: Which substitute device should be selected for maximum design margin?

A: The IRFP260MPBF and IRFP260NPBF provide the highest design margin with 50A continuous current (versus 46A), lower on-state resistance (40mOhm versus 55mOhm), higher power dissipation rating (300W versus 280W), and extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). Both devices are active products with ROHS3 compliance.

Q: Is the IRFP260PBF suitable for applications requiring regulatory compliance?

A: Yes. The IRFP260PBF is ROHS3-compliant and maintains the original electrical specifications of the IRFP260. It is an active product from Vishay Siliconix, suitable for applications requiring regulatory compliance and unchanged electrical performance characteristics.

Q: Can the IRFP260 be used in new designs, or should substitute devices be selected?

A: The IRFP260 is classified as obsolete. For new designs, active substitute devices such as IRFP260MPBF, IRFP260NPBF, or IRFP260PBF are recommended to ensure long-term availability and regulatory compliance. These devices provide equivalent or improved electrical performance with active product status.

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