IRFP250PBF N-Channel MOSFET 200V 30A Equivalent & Substitute Parts

Part Overview

The IRFP250PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage and 30A continuous drain current at 25°C. This device is packaged in a TO-247AC through-hole configuration and is designed for high-power switching applications requiring robust thermal performance and reliable gate control characteristics. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the IRFP250PBF, ensuring functional compatibility within the same application class while accounting for manufacturing variations and performance enhancements across different manufacturers.

Substiute Parts

IRFP250PBF
Vishay SiliconixIn Stock: 1541IRFP250PBF Datasheet
IRFP250PBF
Current Part
IRFP250MPBF
Infineon TechnologiesIn Stock: 59413IRFP250MPBF Datasheet
IRFP250MPBF
MFR Recommended
IRFP250NPBF
Infineon TechnologiesIn Stock: 50579IRFP250NPBF Datasheet
IRFP250NPBF
MFR Recommended
IRFP4227PBF
Infineon TechnologiesIn Stock: 53297IRFP4227PBF Datasheet
IRFP4227PBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 30 A
On-State Resistance (Rds On) @ 18A, 10V 85 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 140 nC
Power Dissipation (Max) 190 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the IRFP250PBF is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 200V minimum
  • Continuous Drain Current (Id): 30A minimum at 25°C
  • Package Type: TO-247-3 (TO-247AC)
  • Mounting Type: Through Hole
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)

Performance Enhancement Allowances: Substitute parts may exceed the original specifications in the following areas without compromising compatibility: on-state resistance (lower values improve efficiency), power dissipation rating (higher values provide thermal margin), gate charge (lower values reduce switching losses), and operating temperature range (extended upper limits provide design flexibility).

The identified substitute parts fall into two categories:

  1. Direct Equivalents (IRFP250MPBF, IRFP250NPBF): Maintain identical voltage and current ratings with improved on-state resistance and power dissipation characteristics.

  2. Higher-Current Alternative (IRFP4227PBF): Exceeds current rating to 65A, providing design flexibility for applications requiring additional current margin while maintaining the 200V voltage class.

Parameter Comparison

Parameter IRFP250PBF (Vishay) IRFP250MPBF (Infineon) IRFP250NPBF (Infineon) IRFP4227PBF (Infineon)
Manufacturer Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies
Vdss (V) 200 200 200 200
Id @ 25°C (A) 30 30 30 65
Rds On @ 18A, 10V (mOhm) 85 75 75 25
Vgs(th) @ 250µA (V) 4 4 4 5
Qg @ 10V (nC) 140 123 123 98
Ciss @ 25V (pF) 2800 2159 2159 4600
Power Dissipation Max (W) 190 214 214 330
Operating Temperature (°C) -55 to 150 -55 to 175 -55 to 175 -40 to 175
Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active

Engineering Selection Recommendations

IRFP250MPBF and IRFP250NPBF (Infineon Technologies):

These parts are direct functional equivalents to the IRFP250PBF with improved electrical performance. Both devices maintain the 200V/30A rating while reducing on-state resistance from 85mOhm to 75mOhm, resulting in lower conduction losses. Gate charge is reduced from 140nC to 123nC, improving switching speed. Power dissipation capability increases from 190W to 214W, providing additional thermal margin. Operating temperature range extends to 175°C, compared to 150°C for the original part. Both substitute parts carry Active product status, ROHS3 compliance, and are manufactured by Infineon Technologies under the HEXFET® series designation. These parts are suitable for direct replacement in existing designs without circuit modification.

IRFP4227PBF (Infineon Technologies):

This part represents a higher-current alternative within the 200V voltage class, rated for 65A continuous drain current versus 30A for the IRFP250PBF. The IRFP4227PBF is appropriate for applications where current margin is required or where design flexibility for future load increases is necessary. On-state resistance is significantly lower at 25mOhm, and power dissipation capability reaches 330W. Gate charge is reduced to 98nC. This device maintains Active product status and ROHS3 compliance. Selection of this part requires verification that the application circuit can accommodate the increased current capability and the higher input capacitance (4600pF versus 2800pF).

All substitute parts maintain RoHS3 compliance and Active product status, ensuring regulatory alignment and long-term availability.

Frequently Asked Questions (FAQ)

Q: Can IRFP250MPBF or IRFP250NPBF be used as direct replacements for IRFP250PBF?

A: Yes. Both parts maintain identical voltage (200V) and current (30A) ratings, matching package type (TO-247-3), and mounting configuration (through hole). The electrical improvements in on-state resistance, gate charge, and power dissipation make these parts functionally compatible without circuit redesign.

Q: What is the primary difference between IRFP250MPBF and IRFP250NPBF?

A: Both parts share identical electrical specifications and performance characteristics. The difference lies in manufacturing designation and REACH compliance status. IRFP250MPBF is REACH Affected, while IRFP250NPBF is REACH Unaffected. Selection between these two should be based on supply chain and regulatory requirements specific to the application region.

Q: When should IRFP4227PBF be selected instead of the direct equivalents?

A: IRFP4227PBF should be selected when the application requires current capacity exceeding 30A or when design margin for future current increases is necessary. The 65A rating provides significant headroom for high-power switching applications. However, the higher input capacitance (4600pF) may require gate driver circuit adjustment to maintain switching speed performance.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts use the TO-247-3 (TO-247AC) through-hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Q: Do the substitute parts maintain the same thermal characteristics?

A: The substitute parts maintain the same package type and mounting interface. However, IRFP250MPBF and IRFP250NPBF offer higher power dissipation ratings (214W versus 190W), and IRFP4227PBF provides significantly higher thermal capacity (330W). These improvements allow for better thermal performance in the same physical package due to manufacturing advances.

Q: What compliance certifications apply to all parts in this comparison?

A: All parts carry RoHS3 compliance and maintain Active product status. Moisture sensitivity level is 1 (Unlimited) for all devices. ECCN and HTSUS classifications are identical across all parts. Regulatory compliance is maintained for all substitute options.

Q: Can gate driver circuits designed for IRFP250PBF be used with IRFP4227PBF without modification?

A: Gate driver circuits will function with IRFP4227PBF; however, the higher input capacitance (4600pF versus 2800pF) may affect switching speed and gate charge delivery requirements. Circuit verification is necessary to confirm that gate driver output impedance and current capability remain adequate for the higher capacitive load.

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