IRFP250 Equivalent & Substitute Parts

Part Overview

The IRFP250 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 33A continuous drain current in a Through Hole TO-247-3 package. Manufactured by STMicroelectronics, this device is classified as Obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	33	A
On-State Resistance (Rds On Max)	85	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4	V
Gate Charge (Qg Max)	158	nC
Power Dissipation (Max)	180	W
Operating Temperature (TJ Max)	150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRFP250 is determined by electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The critical parameters that define substitution eligibility are:

Electrical Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must meet or exceed 33A at 25°C
On-State Resistance (Rds On): Must not exceed 85 mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V maximum
Power Dissipation: Must support thermal requirements at 180W minimum

Mechanical Parameters:

Package Type: TO-247-3 or equivalent footprint
Mounting Type: Through Hole configuration
Pin Configuration: Compatible with TO-247-3 pinout

The IRFP250PBF from Vishay Siliconix qualifies as a substitute based on matching electrical specifications and package compatibility, despite minor variations in continuous drain current rating and gate charge characteristics.

Parameter Comparison

Parameter	IRFP250 (STMicroelectronics)	IRFP250PBF (Vishay Siliconix)	Unit
Drain to Source Voltage (Vdss)	200	200	V
Continuous Drain Current (Id) @ 25°C	33	30	A
Rds On (Max) @ 10V	85 @ 16A	85 @ 18A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4	4	V
Gate Charge (Qg Max) @ 10V	158	140	nC
Input Capacitance (Ciss Max) @ 25V	2850	2800	pF
Power Dissipation (Max)	180	190	W
Operating Temperature (TJ Max)	150	150	°C
Package Type	TO-247-3	TO-247-3	—
Mounting Type	Through Hole	Through Hole	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—

Engineering Selection Recommendations

IRFP250PBF (Vishay Siliconix) as Primary Substitute:

The IRFP250PBF is suitable as a substitute for the obsolete IRFP250 based on the following factors:

Electrical Compatibility: Matching Vdss (200V), equivalent Rds On (85 mOhm), and identical Vgs(th) (4V) ensure functional equivalence in circuit operation.
Current Rating: The IRFP250PBF continuous drain current of 30A is within 91% of the original 33A specification. Applications operating below 30A continuous current experience no derating impact.
Thermal Performance: Power dissipation rating of 190W exceeds the original 180W specification, providing equivalent or improved thermal headroom.
Package Compatibility: Both devices use TO-247-3 Through Hole packaging with identical pinout and mechanical footprint, enabling direct board-level substitution without layout modification.
Product Status and Compliance: The IRFP250PBF carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment compared to the Obsolete IRFP250.
Regulatory Alignment: REACH Affected status of the substitute indicates current regulatory tracking, whereas the original part is REACH Unaffected due to obsolescence.

Frequently Asked Questions (FAQ)

Q: Can the IRFP250PBF directly replace the IRFP250 in existing designs?

A: Yes. Both devices share identical Vdss (200V), Vgs(th) (4V), and Rds On (85 mOhm) specifications. The TO-247-3 package pinout is identical, enabling direct board-level substitution without circuit modification. Applications must operate within the IRFP250PBF continuous current limit of 30A.

Q: What is the impact of the 3A continuous current difference between IRFP250 (33A) and IRFP250PBF (30A)?

A: The IRFP250PBF supports 91% of the original current rating. Designs operating at or below 30A continuous drain current experience no performance impact. Designs requiring the full 33A specification must evaluate alternative parts or implement current derating strategies.

Q: Are the TO-247-3 and TO-247AC packages mechanically identical?

A: The IRFP250PBF is specified as TO-247AC in the supplier device package field but listed as TO-247-3 in the Package/Case field. Both designations refer to the same three-lead Through Hole package with identical mechanical footprint and pinout compatibility.

Q: Why is the IRFP250 classified as Obsolete?

A: Obsolete classification indicates the manufacturer has discontinued production and support. The IRFP250PBF, with Active product status, represents the current equivalent offering from Vishay Siliconix and ensures ongoing availability and technical support.

Q: What compliance differences exist between the IRFP250 and IRFP250PBF?

A: The IRFP250 is RoHS non-compliant and REACH Unaffected. The IRFP250PBF is ROHS3 Compliant and REACH Affected, meeting current regulatory requirements for new product designs and manufacturing in regulated markets.

Q: Are there performance differences in gate charge or input capacitance?

A: The IRFP250PBF exhibits slightly lower gate charge (140 nC versus 158 nC) and input capacitance (2800 pF versus 2850 pF). These minor reductions may improve switching speed and reduce gate drive power requirements in high-frequency applications.

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