IRFP23N50LPBF N-Channel 500V 23A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP23N50LPBF is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix. This device is rated for 500V drain-to-source voltage with 23A continuous drain current at 25°C and 370W maximum power dissipation. The component is housed in a TO-247-3 through-hole package and is classified as Active product status with full RoHS3 compliance.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when application parameters permit operation within the electrical and mechanical specifications of alternative devices. Substitution is valid only when the replacement part meets or exceeds the minimum electrical requirements of the original design specification.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	235 mOhm @ 14A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150	nC @ 10V
Power Dissipation (Max)	370	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Type	N-Channel Enhancement Mode	—

Substitute Part Grouping Explanation

Substitution logic for the IRFP23N50LPBF is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 500V
Continuous Drain Current (Id) @ 25°C: Minimum 23A
Drive Voltage: 10V gate drive capability
Package Type: TO-247-3 through-hole configuration
FET Type: N-Channel enhancement mode
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): 4V to 6.5V range
Maximum Gate Voltage (Vgs Max): ±20V to ±30V
Gate Charge (Qg): Influences switching speed and drive circuit requirements
On-State Resistance (Rds On): Lower values indicate improved efficiency

Substitute parts are grouped into two categories: direct equivalents (matching or exceeding all primary criteria with minimal parameter variance) and functional alternatives (meeting primary criteria with acceptable parameter trade-offs for specific application contexts).

Parameter Comparison

Parameter	IRFP23N50LPBF (Vishay)	APT24F50B (Microchip)	IXFH30N50Q3 (IXYS)	IXTH30N50L2 (IXYS)	STW19NM50N (STMicro)	STW20NK50Z (STMicro)
Vdss (V)	500	500	500	500	500	500
Id @ 25°C (A)	23	24	30	30	14	17
Rds On (Max) @ 10V (mOhm)	235 @ 14A	240 @ 11A	200 @ 15A	200 @ 15A	250 @ 7A	270 @ 8.5A
Vgs(th) (Max) (V)	5 @ 250µA	5 @ 1mA	6.5 @ 4mA	4.5 @ 250µA	4 @ 250µA	4.5 @ 100µA
Qg (Max) @ 10V (nC)	150	90	62	240	34	119
Vgs (Max) (±V)	±30	±30	±20	±20	±25	±30
Power Dissipation (Max) (W)	370	335	690	400	110	190
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS3 Status	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant

Engineering Selection Recommendations

Direct Equivalent Substitutes (Tier 1):

APT24F50B (Microchip Technology) and IXTH30N50L2 (IXYS) are classified as direct equivalents. Both devices meet or exceed the primary electrical specifications of the IRFP23N50LPBF with 500V Vdss rating and continuous drain current ratings of 24A and 30A respectively. Both maintain TO-247-3 package compatibility, RoHS3 compliance, and operating temperature range of -55°C to 150°C. The APT24F50B provides the closest current rating match at 24A with comparable on-state resistance characteristics. The IXTH30N50L2 offers higher current capability (30A) and improved thermal performance (400W dissipation) while maintaining compatible gate drive requirements.

Functional Alternatives (Tier 2):

IXFH30N50Q3 (IXYS) qualifies as a functional alternative with superior electrical performance. This device provides 30A continuous current, 690W power dissipation, and lower on-state resistance (200 mOhm @ 15A, 10V). However, the maximum gate voltage rating is ±20V compared to ±30V on the original part. This device is suitable for applications where the ±20V gate voltage specification is acceptable and where the enhanced thermal performance provides design margin.

Lower Current Alternatives (Tier 3):

STW19NM50N (STMicroelectronics) and STW20NK50Z (STMicroelectronics) are classified as lower current alternatives with 14A and 17A ratings respectively. These devices are suitable only for applications where the design current requirement is below 23A. Both maintain 500V Vdss rating, TO-247-3 package compatibility, and RoHS3 compliance. The STW20NK50Z provides closer performance alignment to the original specification with 17A continuous current rating.

Exclusion Criteria:

IXFJ26N50P3 (IXYS) and IXTH16N50D2 (IXYS) do not qualify as substitutes for the IRFP23N50LPBF. IXFJ26N50P3 provides only 14A continuous current, below the 23A requirement. IXTH16N50D2 is a depletion-mode device with 16A rating and does not meet the enhancement-mode requirement of the original specification.

All substitute parts listed maintain Active product status and full RoHS3 compliance, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the APT24F50B directly replace the IRFP23N50LPBF in all applications?

A: The APT24F50B meets the primary electrical specifications with 500V Vdss, 24A continuous current, and compatible TO-247-3 package. Both devices operate across -55°C to 150°C and maintain RoHS3 compliance. The APT24F50B has slightly lower on-state resistance (240 mOhm vs. 235 mOhm) and reduced gate charge (90 nC vs. 150 nC), which may improve switching performance. Direct substitution is valid when the application design does not depend on the specific gate charge or power dissipation characteristics of the original part.

Q: What is the difference between the IXFH30N50Q3 and IXTH30N50L2?

A: Both devices provide 30A continuous current and 500V Vdss rating in TO-247-3 packages. The IXFH30N50Q3 (HiPerFET Q3 Class) delivers 690W maximum power dissipation with 62 nC gate charge, optimized for high-frequency switching applications. The IXTH30N50L2 (Linear L2 series) provides 400W power dissipation with 240 nC gate charge, optimized for linear regulation and lower-frequency applications. Selection between these devices depends on the application's switching frequency and thermal requirements.

Q: Why are STW19NM50N and STW20NK50Z listed as alternatives if they have lower current ratings?

A: These devices are listed as functional alternatives for applications where the actual design current requirement is below 23A. Both maintain the 500V Vdss specification and TO-247-3 package compatibility. The STW20NK50Z with 17A rating provides closer performance alignment than the STW19NM50N (14A). These alternatives are suitable for designs with current headroom or where lower power dissipation is beneficial.

Q: Are all substitute parts pin-compatible with the IRFP23N50LPBF?

A: All listed substitute parts use the TO-247-3 package configuration with identical pin assignments (Gate, Drain, Source). Physical and electrical pin compatibility is confirmed across all substitute devices. PCB layout modifications are not required for package substitution.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the device and influences gate drive circuit design. The IRFP23N50LPBF requires 150 nC at 10V. Substitute parts range from 34 nC (STW19NM50N) to 240 nC (IXTH30N50L2). Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive power. Higher gate charge may require gate drive circuit adjustment but does not prevent substitution if the drive circuit is capable of supplying the required charge.

Q: Can substitute parts with higher power dissipation ratings be used in thermally constrained applications?

A: Higher power dissipation ratings indicate improved thermal performance and greater thermal margin. Devices such as IXFH30N50Q3 (690W) and IXTH30N50L2 (400W) provide superior thermal performance compared to the original IRFP23N50LPBF (370W). These devices are suitable for thermally constrained applications and may reduce heatsink requirements. However, actual thermal performance depends on junction-to-case thermal resistance and heatsink design, which are not provided in the comparison parameters.

Q: What compliance certifications apply to all substitute parts?

A: All listed substitute parts maintain RoHS3 compliance and are classified as Active products. REACH status varies: APT24F50B is REACH Unaffected; all IXYS and STMicroelectronics devices are REACH Unaffected. All parts carry ECCN classification EAR99 and HTSUS code 8541.29.0095. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all devices, indicating no moisture sensitivity precautions are required during storage or handling.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message