IRFP21N60LPBF N-Channel 600V 21A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP21N60LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 21A continuous drain current at 25°C. This device is packaged in TO-247-3 through-hole configuration and is currently in active product status with 2906 units in stock. The IRFP21N60LPBF is designed for high-voltage switching applications requiring robust thermal performance at 330W maximum power dissipation.

Equivalent and substitute parts are necessary when the primary device becomes unavailable, reaches end-of-life status, or when design requirements necessitate alternative electrical or thermal characteristics within compatible parameter ranges. Substitute devices must maintain compatibility across voltage rating, current capacity, package type, and thermal specifications to ensure direct circuit board replacement without redesign.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	21	A
On-State Resistance (Rds On) @ 13A, 10V	320	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	150	nC
Input Capacitance (Ciss) @ 25V	4000	pF
Maximum Gate Voltage (Vgs)	±30	V
Power Dissipation (Max)	330	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution logic for the IRFP21N60LPBF is based on the following critical parameters that must be maintained or exceeded in equivalent devices:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 600V (equal or higher voltage rating required)
Continuous Drain Current (Id): Minimum 20A at 25°C (current capacity must support or exceed application requirements)
Package Type: TO-247-3 or compatible through-hole variant
FET Type: N-Channel only
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required for regulatory compatibility

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved efficiency; values within 280–370 mOhm range are functionally compatible
Gate Charge (Qg): Lower values reduce switching losses; range 35–150 nC acceptable
Input Capacitance (Ciss): Range 960–7600 pF acceptable depending on gate drive circuit design
Maximum Gate Voltage (Vgs): ±20V to ±30V range acceptable
Power Dissipation: 110W minimum to 890W maximum acceptable based on thermal management capability

Substitute parts listed below meet the primary criteria and are electrically compatible with the IRFP21N60LPBF in standard switching applications. Parts with higher voltage ratings (700V, 800V) or lower current ratings (12A, 13A, 15A) are included where voltage or current headroom is beneficial or where current reduction is acceptable within application constraints.

Parameter Comparison

Parameter	IRFP21N60LPBF	AOK20N60L	IXFH22N60P	SPW15N60C3FKSA1	STW18NM60N	TK14N65W5,S1F
Manufacturer	Vishay Siliconix	Alpha & Omega Semiconductor	IXYS	Infineon Technologies	STMicroelectronics	Toshiba Semiconductor
Vdss (V)	600	600	600	650	600	650
Id @ 25°C (A)	21	20	22	15	13	13.7
Rds On (mOhm)	320 @ 13A, 10V	370 @ 10A, 10V	350 @ 11A, 10V	280 @ 9.4A, 10V	285 @ 6.5A, 10V	300 @ 6.9A, 10V
Vgs(th) (V)	5 @ 250µA	4.5 @ 250µA	5.5 @ 4mA	3.9 @ 675µA	4 @ 250µA	4.5 @ 690µA
Qg (nC)	150 @ 10V	74 @ 10V	58 @ 10V	63 @ 10V	35 @ 10V	40 @ 10V
Ciss (pF)	4000 @ 25V	3680 @ 25V	3600 @ 25V	1660 @ 25V	1000 @ 50V	1300 @ 300V
Vgs Max (V)	±30	±30	±30	±20	±25	±30
Power Dissipation (W)	330	417	400	156	110	130
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Obsolete	Active	Last Time Buy	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Substitute: IXFH22N60P

The IXFH22N60P manufactured by IXYS is the most direct substitute for the IRFP21N60LPBF. This device maintains 600V Vdss rating with 22A continuous drain current, exceeding the original 21A specification. The IXFH22N60P is in active product status with 6250 units in stock. On-state resistance of 350 mOhm at 11A is comparable to the IRFP21N60LPBF at 320 mOhm, with lower gate charge (58 nC versus 150 nC) providing improved switching performance. Power dissipation rating of 400W supports thermal requirements. TO-247-3 package compatibility ensures direct board-level replacement. RoHS3 compliance and REACH unaffected status confirm regulatory alignment.

Secondary Substitute: AOK20N60L

The AOK20N60L from Alpha & Omega Semiconductor provides 600V/20A operation in TO-247-3 package. This device is functionally compatible with 1A lower current rating and 370 mOhm on-state resistance. However, product status is obsolete, limiting long-term availability. This substitute is suitable only when IXFH22N60P is unavailable and immediate replacement is required. 8050 units currently in stock provide near-term supply.

Tertiary Substitute: STW18NM60N

The STW18NM60N from STMicroelectronics offers 600V/13A operation with improved on-state resistance of 285 mOhm and significantly lower gate charge of 35 nC. This device is suitable for applications where lower current is acceptable and reduced switching losses are beneficial. Active product status and 1787 units in stock ensure availability. Power dissipation of 110W is lower than the original specification, requiring thermal design verification for high-power applications.

Higher Voltage Alternative: TK14N65W5,S1F

The TK14N65W5,S1F from Toshiba Semiconductor provides 650V/13.7A operation, offering voltage headroom for applications with transient overvoltage conditions. This device is suitable when higher voltage margin is required and current reduction to 13.7A is acceptable. Active product status and 718 units in stock support availability. Gate charge of 40 nC and on-state resistance of 300 mOhm provide efficient switching characteristics.

Not Recommended: SPW15N60C3FKSA1

The SPW15N60C3FKSA1 from Infineon Technologies is listed as Last Time Buy status, indicating end-of-life phase-out. While electrically compatible at 650V/15A, this device should not be selected for new designs or long-term production due to supply discontinuation. Current inventory of 1097 units does not guarantee future availability.

Not Recommended: IXFX27N80Q and IXTH12N70X2

These devices are excluded from primary substitution consideration. IXFX27N80Q operates at 800V with different package variant (PLUS247-3), introducing design complexity. IXTH12N70X2 operates at 700V with reduced current rating of 12A, providing insufficient current capacity for most IRFP21N60LPBF applications.

Not Recommended: IXTX32P60P

This device is P-Channel MOSFET, fundamentally incompatible with N-Channel IRFP21N60LPBF applications. No substitution relationship exists.

Frequently Asked Questions (FAQ)

Q: Can the IXFH22N60P directly replace the IRFP21N60LPBF without circuit modification?

A: Yes. The IXFH22N60P maintains identical 600V voltage rating, exceeds the 21A current requirement at 22A, and uses the same TO-247-3 package. Gate threshold voltage, maximum gate voltage, and operating temperature range are compatible. Direct pin-for-pin replacement is possible. Lower gate charge (58 nC versus 150 nC) may improve switching performance without circuit changes.

Q: What is the significance of the AOK20N60L being listed as obsolete?

A: Obsolete status indicates the manufacturer has discontinued active production and support. While 8050 units are currently in stock, future availability is not guaranteed. This device should be used only as a temporary substitute when primary alternatives are unavailable. New designs should not incorporate obsolete parts.

Q: Why is the SPW15N60C3FKSA1 marked as Last Time Buy?

A: Last Time Buy status indicates the manufacturer is in final phase-out. Customers are notified this is the last opportunity to purchase before production ends. After Last Time Buy period expires, the device becomes unavailable. This status makes it unsuitable for new product designs or long-term production commitments.

Q: Can I use the STW18NM60N if my application requires 21A continuous current?

A: No. The STW18NM60N is rated for 13A continuous drain current, which is 8A below the IRFP21N60LPBF specification. Using this device at 21A would exceed its rated current capacity, causing excessive junction temperature rise, reduced device lifetime, and potential failure. Current rating must not be exceeded.

Q: What does the TO-247-3 package variant mean for the IXFX27N80Q?

A: The IXFX27N80Q uses PLUS247-3 package, which is a variant of TO-247-3. While mechanically similar, PLUS247-3 has different pin spacing and thermal characteristics. Direct substitution into TO-247-3 footprints is not possible without PCB redesign. This device is not recommended as a substitute.

Q: How do I determine if a substitute part is suitable for my specific application?

A: Verify the following parameters match or exceed your application requirements: (1) Drain-to-Source Voltage (Vdss) must equal or exceed your maximum operating voltage; (2) Continuous Drain Current (Id) must equal or exceed your maximum continuous current; (3) Operating temperature range must encompass your application environment; (4) Package type must match your PCB footprint; (5) On-state resistance and gate charge should be evaluated for switching loss and thermal performance impact.

Q: Why do substitute parts have different gate charge values?

A: Gate charge (Qg) varies based on semiconductor process technology and die design. Lower gate charge reduces switching losses and allows faster switching speeds, but requires adequate gate drive circuit capability. Higher gate charge increases switching losses but may be more tolerant of weaker gate drive circuits. Both are functionally compatible if your gate drive circuit can supply the required charge within acceptable switching time.

Q: Is RoHS3 compliance mandatory for substitution?

A: Yes. All listed substitute parts maintain RoHS3 compliance, matching the IRFP21N60LPBF specification. RoHS3 compliance is a regulatory requirement in most markets and ensures material composition restrictions are met. Substitute parts without RoHS3 compliance are not acceptable for equivalent replacement.

Q: Can I use a higher voltage rated device like the TK14N65W5,S1F in place of the IRFP21N60LPBF?

A: Yes, with current capacity verification. The TK14N65W5,S1F provides 650V rating, which is 50V higher than the IRFP21N60LPBF. This provides voltage margin for transient overvoltage conditions. However, continuous drain current is 13.7A versus 21A, which is 7.3A lower. This substitution is valid only if your application current requirement does not exceed 13.7A.

Q: What is the impact of different on-state resistance values on circuit performance?

A: On-state resistance (Rds On) directly affects conduction losses and heat dissipation. Lower Rds On reduces power loss and junction temperature. The IRFP21N60LPBF has 320 mOhm at 13A. Substitutes range from 280 mOhm (SPW15N60C3FKSA1) to 370 mOhm (AOK20N60L). Lower values improve efficiency; higher values increase heat generation. Select based on your thermal management capability and efficiency requirements.

Q: Are there any compliance certifications beyond RoHS3 that differ between substitute parts?

A: All listed substitute parts are RoHS3 compliant and ECCN EAR99 classified. Most are REACH unaffected. The SPW15N60C3FKSA1 and TK14N65W5,S1F do not specify REACH status in provided data. All devices have Moisture Sensitivity Level 1 (unlimited), indicating no moisture sensitivity restrictions. Compliance differences are minimal across the substitute list.

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