IRFP150N N-Channel MOSFET 100V 42A Equivalent & Substitute Parts

Part Overview

The IRFP150N is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 42A continuous drain current at 25°C. This device is packaged in TO-247AC through-hole configuration and is classified as obsolete. The IRFP150N operates across a temperature range of -55°C to 175°C (junction temperature) with a maximum power dissipation of 160W at case temperature.

Due to its obsolete product status, identifying equivalent and substitute parts is necessary for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and compliance requirements.

Substiute Parts

IRFP150N
Infineon TechnologiesIn Stock: 1300IRFP150N Datasheet
IRFP150N
Current Part
IRFP150NPBF
Infineon TechnologiesIn Stock: 65278IRFP150NPBF Datasheet
IRFP150NPBF
Direct
IRFP150PBF
Vishay SiliconixIn Stock: 2441IRFP150PBF Datasheet
IRFP150PBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 42 A (Tc)
Rds On (Max) @ Id, Vgs 36 mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10V
Power Dissipation (Max) 160 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3

Substitute Part Grouping Explanation

Substitute parts for the IRFP150N are identified based on strict electrical and mechanical parameter alignment. The substitution logic is structured as follows:

Direct Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 100V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET (Metal Oxide) (exact match required)
  • Gate Charge (Qg): Within acceptable range for switching performance
  • Operating Temperature Range: -55°C to 175°C (exact match required)
  • Mounting Type: Through Hole (exact match required)
  • Package / Case: TO-247-3 (exact match required)

Acceptable Parameter Variations:

  • Continuous Drain Current (Id): Minimum 41A (within 97.6% of original 42A specification)
  • Rds On (Max): Up to 55mOhm (acceptable variance for equivalent functionality)
  • Power Dissipation (Max): 160W or greater (equal or superior thermal capability)
  • Input Capacitance (Ciss): Variance acceptable within switching performance envelope

Substitute parts must maintain compatibility with the original circuit design while meeting or exceeding performance specifications in critical areas.

Parameter Comparison

Parameter IRFP150N IRFP150NPBF IRFP150PBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 100V 100V 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc) 41A (Tc)
Rds On (Max) @ Id, Vgs 36mOhm @ 23A, 10V 36mOhm @ 23A, 10V 55mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V 110nC @ 10V 140nC @ 10V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V 1900pF @ 25V 2800pF @ 25V
Power Dissipation (Max) 160W (Tc) 160W (Tc) 230W (Tc)
Operating Temperature Range -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFP150NPBF (Infineon Technologies) - Primary Substitute

The IRFP150NPBF is the direct functional equivalent of the IRFP150N. Both parts share identical electrical specifications including 100V Vdss, 42A continuous drain current, 36mOhm Rds On, and 110nC gate charge. The IRFP150NPBF is manufactured by the same supplier (Infineon Technologies) and maintains the same TO-247-3 package configuration. The primary distinction is product status: IRFP150NPBF is active with ROHS3 compliance, whereas IRFP150N is obsolete and RoHS non-compliant. The IRFP150NPBF is available in tube packaging with 65,200 units in stock, providing reliable long-term sourcing. This part is recommended for direct replacement in all applications where the original IRFP150N was specified.

IRFP150PBF (Vishay Siliconix) - Secondary Substitute

The IRFP150PBF is a cross-manufacturer substitute manufactured by Vishay Siliconix. This part maintains the same 100V Vdss rating, TO-247-3 package, and operating temperature range as the IRFP150N. The continuous drain current is 41A (97.6% of the original 42A specification), which is within acceptable tolerance for equivalent functionality. The Rds On specification is 55mOhm at 25A and 10V gate voltage, representing a higher on-resistance compared to the IRFP150N (36mOhm at 23A, 10V). However, the IRFP150PBF offers superior power dissipation capability at 230W (Tc) versus 160W (Tc) for the original part, providing enhanced thermal performance. Gate charge is 140nC at 10V, and input capacitance is 2800pF at 25V. The IRFP150PBF is ROHS3 compliant and active in production with 2,360 units in stock. This part is suitable for applications where the higher on-resistance is acceptable and the enhanced thermal capability is beneficial.

Selection Basis:

Both substitute parts are selected based on maintained electrical compatibility across voltage rating, current capacity, package type, and operating temperature range. Product status and compliance certifications (ROHS3) are provided by both substitutes, addressing the obsolescence of the original IRFP150N. Inventory availability and active production status ensure long-term component sourcing reliability.

Frequently Asked Questions (FAQ)

Q1: Can IRFP150NPBF be used as a direct replacement for IRFP150N?

Yes. The IRFP150NPBF is electrically and mechanically identical to the IRFP150N. Both parts feature 100V Vdss, 42A continuous drain current, 36mOhm Rds On, and TO-247-3 through-hole packaging. The primary difference is product status: IRFP150NPBF is active and ROHS3 compliant, while IRFP150N is obsolete. No circuit modifications are required for substitution.

Q2: What are the key differences between IRFP150NPBF and IRFP150PBF?

Both parts maintain 100V Vdss and TO-247-3 packaging. IRFP150NPBF (Infineon) provides 42A continuous drain current and 36mOhm Rds On. IRFP150PBF (Vishay) provides 41A continuous drain current and 55mOhm Rds On. The IRFP150PBF offers higher power dissipation (230W vs. 160W). IRFP150NPBF is the closer electrical match; IRFP150PBF is suitable when higher on-resistance and thermal capability are acceptable.

Q3: Is the higher Rds On of IRFP150PBF acceptable in my application?

The IRFP150PBF Rds On specification of 55mOhm (at 25A, 10V) is higher than the IRFP150N specification of 36mOhm (at 23A, 10V). Acceptability depends on circuit design margins and thermal management. Applications with tight on-resistance budgets or high switching frequency should prioritize IRFP150NPBF. Applications with thermal headroom may accommodate IRFP150PBF.

Q4: Are both substitute parts available in the same packaging as IRFP150N?

Yes. Both IRFP150NPBF and IRFP150PBF are packaged in TO-247-3 through-hole configuration, matching the original IRFP150N package. IRFP150NPBF is supplied in tube packaging; IRFP150PBF is also supplied in tube packaging. PCB footprint and mounting requirements are identical.

Q5: What is the compliance status of the substitute parts?

Both IRFP150NPBF and IRFP150PBF are ROHS3 compliant and REACH unaffected. The original IRFP150N is RoHS non-compliant. Substitution with either part addresses regulatory compliance requirements for new designs and production runs.

Q6: Which substitute part should I select for new designs?

For new designs, IRFP150NPBF is recommended as the primary choice due to electrical equivalence with the original IRFP150N and active production status. IRFP150PBF is suitable as a secondary option if Infineon supply is constrained or if the enhanced thermal capability (230W) is advantageous for the application.

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