IRFP150A N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP150A is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 43A continuous drain current at 25°C. This device features a through-hole TO-3PN package and is designed for high-power switching applications requiring robust thermal performance at 193W maximum power dissipation.

The IRFP150A is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRFP150A
onsemiIn Stock: 2114IRFP150A Datasheet
IRFP150A
Current Part
FQA70N10
onsemiIn Stock: 17884FQA70N10 Datasheet
FQA70N10
MFR Recommended
2SK1317-E
Renesas Electronics CorporationIn Stock: 328152SK1317-E Datasheet
2SK1317-E
Similar
IXTQ48N20T
IXYSIn Stock: 5831IXTQ48N20T Datasheet
IXTQ48N20T
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 43 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 40 mOhm @ 21.5A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Maximum Gate Voltage (Vgs Max) ±20 V
Power Dissipation (Max) 193 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package TO-3PN

Substitute Part Grouping Explanation

Substitution of the IRFP150A is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 100V
  • Continuous Drain Current (Id) must equal or exceed 43A at 25°C
  • On-State Resistance (Rds On) must not exceed the original specification to maintain switching efficiency
  • Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
  • Maximum Gate Voltage (Vgs Max) must accommodate the application's gate drive voltage
  • Operating Temperature Range must support the application's thermal environment
  • Mounting Type and Package must be through-hole TO-3P variants for mechanical compatibility

Substitute Classification:

MFR Recommended Substitute: FQA70N10 meets all primary criteria with enhanced current rating and reduced on-state resistance, maintaining identical voltage rating and package compatibility.

Similar Substitutes: 2SK1317-E and IXTQ48N20T are listed as similar alternatives but present significant deviations in voltage rating that restrict their application scope relative to the IRFP150A.

Parameter Comparison

Parameter IRFP150A FQA70N10 2SK1317-E IXTQ48N20T
Manufacturer onsemi onsemi Renesas Electronics Corporation IXYS
Vdss (V) 100 100 1500 200
Id @ 25°C (A) 43 70 2.5 48
Rds On (Max) (mOhm) 40 @ 21.5A, 10V 23 @ 35A, 10V 12000 @ 2A, 15V 50 @ 24A, 10V
Vgs(th) (Max) (V) 4 @ 250µA 4 @ 250µA 4.5 @ 250µA
Vgs (Max) (V) ±20 ±25 ±20 ±30
Power Dissipation (Max) (W) 193 214 100 250
Operating Temperature (°C) -55 to 175 -55 to 175 150 (TJ) -55 to 175
Package TO-3PN TO-3PN TO-3P TO-3P
Product Status Obsolete Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQA70N10 (MFR Recommended Substitute)

The FQA70N10 is the primary substitute for the IRFP150A. Both devices share identical drain-to-source voltage (100V) and are manufactured by onsemi. The FQA70N10 provides superior electrical performance with 70A continuous drain current versus 43A, and reduced on-state resistance (23 mOhm versus 40 mOhm). Both devices operate across the identical temperature range (-55°C to 175°C) and are housed in compatible TO-3PN packages. The FQA70N10 maintains active product status with full RoHS3 compliance and REACH unaffected designation. Gate threshold voltage and maximum gate voltage specifications are compatible with existing drive circuits designed for the IRFP150A.

2SK1317-E (Similar Substitute)

The 2SK1317-E is manufactured by Renesas Electronics Corporation and maintains active product status with RoHS3 compliance. However, this device operates at 1500V drain-to-source voltage, which significantly exceeds the IRFP150A's 100V rating. The continuous drain current is limited to 2.5A, substantially below the IRFP150A's 43A specification. The 2SK1317-E is suitable only for applications requiring high-voltage, low-current operation and is not recommended as a direct substitute for standard 100V applications.

IXTQ48N20T (Similar Substitute)

The IXTQ48N20T is manufactured by IXYS and maintains active product status with RoHS3 compliance and REACH unaffected designation. This device operates at 200V drain-to-source voltage, which exceeds the IRFP150A's 100V rating by a factor of two. The continuous drain current rating of 48A exceeds the IRFP150A's 43A specification. The on-state resistance of 50 mOhm is higher than the IRFP150A's 40 mOhm specification. The IXTQ48N20T is suitable for applications requiring higher voltage operation and is not recommended as a direct substitute for 100V applications.

Frequently Asked Questions (FAQ)

Q: Can the FQA70N10 directly replace the IRFP150A in existing designs?

A: Yes. The FQA70N10 is electrically and mechanically compatible with the IRFP150A. Both devices feature 100V drain-to-source voltage, identical gate threshold voltage specifications, compatible maximum gate voltage ratings, and identical through-hole TO-3PN packaging. The FQA70N10 provides enhanced current handling and reduced on-state resistance, making it suitable for direct substitution in applications currently utilizing the IRFP150A.

Q: What are the key differences between the FQA70N10 and IRFP150A?

A: The FQA70N10 provides 70A continuous drain current compared to the IRFP150A's 43A, and features reduced on-state resistance of 23 mOhm versus 40 mOhm. The FQA70N10 supports a higher maximum gate voltage (±25V versus ±20V) and offers increased power dissipation capability (214W versus 193W). Both devices maintain identical 100V voltage rating and operating temperature range.

Q: Why is the 2SK1317-E listed as a similar substitute if it has different voltage and current ratings?

A: The 2SK1317-E is listed as a similar substitute based on package compatibility and N-Channel MOSFET technology. However, its 1500V voltage rating and 2.5A current rating make it unsuitable for applications designed around the IRFP150A's 100V, 43A specifications. This device is appropriate only for high-voltage, low-current applications.

Q: Can the IXTQ48N20T replace the IRFP150A?

A: The IXTQ48N20T is not recommended as a direct replacement for the IRFP150A. While the IXTQ48N20T provides adequate current handling (48A versus 43A), its 200V drain-to-source voltage rating exceeds the IRFP150A's 100V specification. Applications designed for 100V operation should not use the IXTQ48N20T without circuit redesign to accommodate the higher voltage rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IRFP150A, FQA70N10, 2SK1317-E, and IXTQ48N20T are all RoHS3 compliant. The 2SK1317-E carries REACH affected status, while the IRFP150A, FQA70N10, and IXTQ48N20T are REACH unaffected.

Q: What is the operating temperature range compatibility between the IRFP150A and its substitutes?

A: The IRFP150A and FQA70N10 both operate across -55°C to 175°C (TJ). The IXTQ48N20T also supports this identical temperature range. The 2SK1317-E operates to a maximum junction temperature of 150°C, which is lower than the other devices and may limit its use in high-temperature applications.

Q: Are the packages physically identical between all listed devices?

A: The IRFP150A and FQA70N10 both use TO-3PN packages. The 2SK1317-E and IXTQ48N20T use TO-3P packages. While these packages are mechanially similar and share the same footprint designation (TO-3P-3, SC-65-3), the TO-3PN variant used by the IRFP150A and FQA70N10 is the preferred match for direct substitution.

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