IRFP150 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP150 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 41A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and is designed for high-power switching applications with a maximum power dissipation of 230W at the case temperature.

The IRFP150 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRFP150

Vishay SiliconixIn Stock: 15463IRFP150 Datasheet

Current PartRFQ

IRFP150PBF

Vishay SiliconixIn Stock: 2441IRFP150PBF Datasheet

DirectRFQ

IRFP140NPBF

Infineon TechnologiesIn Stock: 15730IRFP140NPBF Datasheet

MFR RecommendedRFQ

IRFP150NPBF

Infineon TechnologiesIn Stock: 65278IRFP150NPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFP150 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• Continuous Drain Current (Id): Must meet or exceed 41A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V @ 250µA
• Maximum Gate Voltage (Vgs): Must support ±20V operation
• Operating Temperature Range: Must span -55°C to 175°C

Mechanical Compatibility Criteria:

• Package Type: TO-247-3 through-hole mounting
• Mounting Configuration: Through-hole installation

Compliance Criteria:

• RoHS Status: Active substitutes must be RoHS3 compliant
• REACH Status: Must be REACH Unaffected
• Product Status: Active status preferred for long-term availability

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications) and functional alternatives (meeting or exceeding all critical parameters while maintaining package compatibility).

Parameter Comparison

Engineering Selection Recommendations

IRFP150PBF (Vishay Siliconix) – Direct Equivalent

The IRFP150PBF is the direct equivalent to the obsolete IRFP150. It maintains identical electrical specifications: 100V Vdss, 41A continuous drain current, 55mOhm Rds On, and 230W power dissipation. The primary distinction is product status (Active) and RoHS3 compliance, making it suitable for new designs and ongoing production. This part is available in tube packaging and is recommended as the primary replacement for direct substitution applications.

IRFP150NPBF (Infineon Technologies) – Functional Equivalent

The IRFP150NPBF is manufactured by Infineon Technologies under the HEXFET® series. It exceeds the IRFP150 specifications in continuous drain current (42A versus 41A) and provides superior on-state resistance (36mOhm versus 55mOhm at comparable conditions). Power dissipation is rated at 160W, which is lower than the original 230W specification. Gate charge is reduced to 110nC, and input capacitance is 1900pF. This device is Active, RoHS3 compliant, and suitable for applications where improved efficiency and reduced gate drive requirements are beneficial. Thermal management design must account for the lower power dissipation rating.

IRFP140NPBF (Infineon Technologies) – Functional Alternative

The IRFP140NPBF is a lower-current variant rated for 33A continuous drain current, compared to the IRFP150's 41A specification. It maintains the same 100V Vdss rating and offers improved on-state resistance (52mOhm) and significantly reduced gate charge (94nC) and input capacitance (1400pF). Power dissipation is 140W. This device is suitable only for applications where the 33A current rating is sufficient and where reduced switching losses are prioritized. It is Active and RoHS3 compliant.

Selection Criteria Summary:

• For direct replacement with identical specifications: IRFP150PBF
• For improved efficiency and higher current capability: IRFP150NPBF
• For reduced switching losses in lower-current applications: IRFP140NPBF

All recommended substitutes are Active products with RoHS3 compliance and REACH Unaffected status, ensuring regulatory compliance and long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can the IRFP150PBF be used as a direct replacement for the obsolete IRFP150?

A: Yes. The IRFP150PBF is electrically and mechanically identical to the IRFP150, with matching Vdss (100V), Id (41A), Rds On (55mOhm), and power dissipation (230W) specifications. The primary difference is product status (Active versus Obsolete) and RoHS3 compliance. No circuit modifications are required.

Q: What is the advantage of using IRFP150NPBF over IRFP150PBF?

A: The IRFP150NPBF provides superior on-state resistance (36mOhm versus 55mOhm), resulting in lower conduction losses and improved efficiency. It also offers slightly higher continuous drain current (42A versus 41A) and reduced gate charge (110nC versus 140nC), which decreases switching losses and simplifies gate drive circuit design. However, the maximum power dissipation rating is lower (160W versus 230W), requiring thermal design verification for high-power applications.

Q: Is the IRFP140NPBF suitable as a substitute for the IRFP150?

A: The IRFP140NPBF is suitable only for applications where the continuous drain current requirement does not exceed 33A. It maintains the same 100V Vdss rating and offers reduced switching losses due to lower gate charge (94nC) and input capacitance (1400pF). Applications requiring the full 41A capability of the IRFP150 cannot use this device without circuit redesign.

Q: Are all substitute parts compatible with the TO-247-3 package footprint?

A: Yes. All substitute parts listed (IRFP150PBF, IRFP150NPBF, and IRFP140NPBF) use the TO-247-3 through-hole package, ensuring mechanical and pin compatibility with existing PCB designs and socket configurations.

Q: What compliance certifications apply to the substitute parts?

A: All active substitute parts (IRFP150PBF, IRFP150NPBF, and IRFP140NPBF) are RoHS3 compliant and REACH Unaffected. The original IRFP150 is RoHS non-compliant and REACH Unaffected. For applications subject to RoHS regulations, only the active substitutes are acceptable.

Q: How does the gate charge difference affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IRFP150 requires 140nC, while IRFP150NPBF requires 110nC and IRFP140NPBF requires 94nC. Lower gate charge reduces gate drive circuit power dissipation and allows faster switching transitions. Gate drive circuits designed for the IRFP150 will operate with reduced power consumption when driving the lower gate charge alternatives.

Q: What thermal considerations apply when substituting with IRFP150NPBF?

A: The IRFP150NPBF has a maximum power dissipation rating of 160W compared to the IRFP150's 230W. Applications operating near the thermal limits of the original design must verify that the lower power dissipation rating is sufficient. The improved on-state resistance (36mOhm versus 55mOhm) typically results in lower actual power dissipation during operation, but thermal design review is required for high-power applications.

Q: Are there inventory considerations for selecting a substitute?

A: Inventory availability varies by part number and supplier. IRFP150NPBF has the highest reported inventory (65,200 pcs), followed by IRFP140NPBF (15,700 pcs) and IRFP150PBF (2,360 pcs). For applications requiring immediate availability and long-term supply assurance, IRFP150NPBF is the preferred choice.