IRFP140NPBF N-Channel MOSFET 100V 33A Equivalent & Substitute Parts

Part Overview

The IRFP140NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications requiring 100V drain-to-source voltage capability. This device operates in the Through Hole TO-247AC package and is classified as Active product status. Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Substiute Parts

IRFP140NPBF

Infineon TechnologiesIn Stock: 15730IRFP140NPBF Datasheet

Current PartRFQ

IRFP140PBF

Vishay SiliconixIn Stock: 15340IRFP140PBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFP140NPBF with equivalent parts is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 100V
• Package Type: Must be TO-247-3 (Through Hole)
• FET Type: Must be N-Channel MOSFET
• Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V @ 250µA
• Maximum Gate Voltage (Vgs Max): Must support ±20V
• Operating Temperature Range: Must cover -55°C to 175°C (TJ)
• RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 33A @ 25°C
• On-State Resistance (Rds On): Lower or equal values are acceptable
• Gate Charge (Qg): Values within application switching frequency requirements
• Input Capacitance (Ciss): Values within circuit design constraints
• Power Dissipation: Must support thermal requirements of the application

The IRFP140PBF qualifies as a direct substitute based on matching all primary criteria and maintaining electrical performance within acceptable ranges for N-Channel 100V MOSFET applications.

Parameter Comparison

Engineering Selection Recommendations

IRFP140PBF Substitution Suitability:

The IRFP140PBF from Vishay Siliconix is a qualified substitute for the IRFP140NPBF based on the following engineering factors:

1. Electrical Compatibility: Both devices share identical Vdss (100V), Vgs(th) (4V @ 250µA), and Vgs(Max) (±20V) specifications, ensuring direct gate drive compatibility and voltage rating alignment.

2. Package Compatibility: Both use TO-247-3 Through Hole packaging, permitting direct PCB footprint compatibility without layout modifications.

3. Compliance Alignment: Both devices maintain ROHS3 Compliant status and identical operating temperature range (-55°C to 175°C TJ), satisfying regulatory and thermal design requirements.

4. Performance Trade-offs: The IRFP140PBF exhibits higher on-state resistance (77 mOhm vs. 52 mOhm) and higher input capacitance (1700 pF vs. 1400 pF), resulting in increased conduction losses and gate drive current requirements. However, the substitute provides lower gate charge (72 nC vs. 94 nC) and higher power dissipation rating (180W vs. 140W), offering improved switching speed and thermal headroom.

5. Application Context: Substitution is appropriate for applications where the 2A reduction in continuous drain current (31A vs. 33A) and increased on-state resistance do not exceed thermal or efficiency margins. Applications with stringent current or thermal requirements should evaluate the performance impact.

Frequently Asked Questions (FAQ)

Q1: Can IRFP140PBF directly replace IRFP140NPBF in existing designs without PCB modifications?

A: Yes. Both devices use identical TO-247-3 Through Hole packaging with matching pin configurations. No PCB layout changes are required for mechanical and electrical connection compatibility.

Q2: What is the significance of the 2A difference in continuous drain current (33A vs. 31A)?

A: The IRFP140PBF supports 31A continuous drain current compared to 33A for the IRFP140NPBF. This difference is application-dependent. For designs operating below 31A, the substitute is fully compatible. For designs requiring the full 33A specification, the substitute may not meet current requirements and should not be used.

Q3: How does the higher on-state resistance (77 mOhm vs. 52 mOhm) of the substitute affect circuit performance?

A: Higher on-state resistance increases conduction losses and heat generation. In high-current applications, this results in greater power dissipation and elevated junction temperature. Thermal analysis of the specific application is necessary to confirm that the substitute's 180W power dissipation rating provides adequate margin for the increased losses.

Q4: Why does the substitute have lower gate charge (72 nC vs. 94 nC)?

A: Lower gate charge indicates faster switching transitions and reduced gate drive current requirements. This is a performance advantage that reduces switching losses and simplifies gate drive circuit design. No design modifications are required to accommodate this parameter difference.

Q5: What does the higher input capacitance (1700 pF vs. 1400 pF) mean for gate drive design?

A: Higher input capacitance requires greater gate drive current to achieve the same switching speed. Gate drive circuits must supply sufficient current to charge the higher capacitance within the required switching time. Verify that the existing gate drive circuit can deliver the necessary current without exceeding voltage or current ratings.

Q6: Are both devices suitable for the same operating temperature range?

A: Yes. Both IRFP140NPBF and IRFP140PBF operate across -55°C to 175°C (TJ), ensuring identical thermal performance specifications and environmental compatibility.

Q7: Do both devices meet the same regulatory compliance standards?

A: Yes. Both devices are ROHS3 Compliant, REACH Unaffected, and classified under identical ECCN (EAR99) and HTSUS (8541.29.0095) codes, ensuring equivalent regulatory and export compliance.

Q8: Which device should be selected for new designs?

A: Selection depends on application requirements. For designs requiring maximum current capacity (33A) and minimum on-state resistance, use IRFP140NPBF. For designs where the 31A rating and higher on-state resistance are acceptable, IRFP140PBF offers improved switching characteristics and thermal headroom. Both are Active status products with equivalent long-term availability.