IRFP064VPBF N-Channel 60V 130A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP064VPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 130A continuous drain current at 25°C. This device is packaged in TO-247AC through-hole configuration and is part of the HEXFET® series. The IRFP064VPBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate drive characteristics, and thermal performance while accommodating the through-hole TO-247AC package standard.

Substiute Parts

IRFP064VPBF

Infineon TechnologiesIn Stock: 3358IRFP064VPBF Datasheet

Current PartRFQ

IRFP3306PBF

Infineon TechnologiesIn Stock: 4403IRFP3306PBF Datasheet

MFR RecommendedRFQ

IRFP064PBF

Vishay SiliconixIn Stock: 15419IRFP064PBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRFP064VPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 60V
• Package Type: Must be TO-247AC through-hole configuration
• Gate Drive Voltage: Must support 10V drive voltage
• Gate Threshold Voltage: Must be 4V @ 250µA
• Gate Voltage Rating: Must support ±20V
• Operating Temperature Range: Must span -55°C to 175°C (TJ)
• Moisture Sensitivity Level: Must be MSL 1 (Unlimited)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Acceptable range 70A to 130A at 25°C
• Rds On (Max): Acceptable range 4.2 mOhm to 9 mOhm @ 10V drive
• Gate Charge (Qg): Acceptable range 120 nC to 260 nC @ 10V
• Input Capacitance (Ciss): Acceptable range 4520 pF to 7400 pF
• Power Dissipation (Max): Acceptable range 220W to 300W

The identified substitute parts meet all primary criteria and fall within acceptable ranges for secondary parameters. Both substitute parts are manufactured by Infineon Technologies and Vishay Siliconix, maintaining the same package footprint and electrical interface.

Parameter Comparison

Engineering Selection Recommendations

IRFP3306PBF (Infineon Technologies)

The IRFP3306PBF is an active product manufactured by Infineon Technologies with ROHS3 compliance. This substitute maintains the 60V Vdss rating and TO-247AC package configuration. The continuous drain current is rated at 120A, representing a 7.7% reduction from the IRFP064VPBF specification. The Rds On is improved at 4.2 mOhm, and gate charge is reduced to 120 nC, resulting in lower switching losses and improved gate drive efficiency. Power dissipation rating is 220W. This substitute is suitable for applications where the 120A current rating is sufficient and where reduced switching losses are beneficial.

IRFP064PBF (Vishay Siliconix)

The IRFP064PBF is an active product manufactured by Vishay Siliconix with ROHS3 compliance. This substitute maintains the 60V Vdss rating and TO-247AC package configuration. The continuous drain current is rated at 70A, representing a 46.2% reduction from the IRFP064VPBF specification. The Rds On is 9 mOhm, and gate charge is 190 nC. Power dissipation rating is 300W. This substitute is suitable for applications where current requirements do not exceed 70A and where higher power dissipation capability is required.

Both substitute parts maintain electrical interface compatibility, thermal operating range, and package footprint with the obsolete IRFP064VPBF. Selection between substitutes depends on application current requirements and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can the IRFP3306PBF directly replace the IRFP064VPBF in all applications?

A: The IRFP3306PBF maintains identical voltage ratings (60V Vdss), gate drive characteristics (10V), and package configuration (TO-247AC). However, the continuous drain current rating is 120A compared to 130A for the IRFP064VPBF. Direct replacement is valid only if the application current requirement does not exceed 120A at 25°C.

Q: What are the key differences between the two substitute parts?

A: The IRFP3306PBF offers lower Rds On (4.2 mOhm) and reduced gate charge (120 nC), resulting in improved switching efficiency and lower gate drive power. The IRFP064PBF offers higher power dissipation capability (300W) but with higher Rds On (9 mOhm) and reduced current rating (70A). Selection depends on whether the application prioritizes current capacity or thermal dissipation capability.

Q: Are both substitute parts available in the same package as the IRFP064VPBF?

A: Yes. Both the IRFP3306PBF and IRFP064PBF are packaged in TO-247-3 through-hole configuration, identical to the IRFP064VPBF. Pin configuration and mechanical footprint are compatible.

Q: What is the significance of the obsolete status of the IRFP064VPBF?

A: The obsolete status indicates that Infineon Technologies has discontinued production of the IRFP064VPBF. Both substitute parts are active products with ongoing manufacturing support, ensuring long-term availability and supply chain continuity.

Q: Do the substitute parts meet the same compliance standards as the IRFP064VPBF?

A: Both substitute parts are ROHS3 compliant and REACH unaffected, matching the compliance profile of the IRFP064VPBF. Moisture sensitivity level is MSL 1 (Unlimited) for all three parts.

Q: How do gate charge differences affect circuit design?

A: The IRFP3306PBF has reduced gate charge (120 nC) compared to the IRFP064VPBF (260 nC), requiring less gate drive energy and enabling faster switching transitions. The IRFP064PBF has intermediate gate charge (190 nC). Gate drive circuits must be verified to deliver adequate charge at the specified 10V drive voltage for the selected substitute.

Q: What thermal considerations apply when selecting a substitute?

A: The IRFP064VPBF is rated for 250W power dissipation. The IRFP3306PBF is rated for 220W, and the IRFP064PBF is rated for 300W. Thermal management design must account for the selected substitute's power dissipation rating and the application's duty cycle and ambient temperature conditions.