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IRFP054NPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRFP054NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 81A continuous drain current in a TO-247AC through-hole package. This device is part of the HEXFET® series and is classified as "Not For New Designs," indicating that it has been superseded in Infineon's product portfolio. For applications requiring continued component availability or enhanced electrical performance, equivalent substitute parts are available within the same package family.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 55 | V |
| Continuous Drain Current (Id) @ 25°C | 81 | A |
| On-State Resistance (Rds On) @ 43A, 10V | 12 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 130 | nC |
| Power Dissipation (Max) | 170 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-247AC | — |
Substitute Part Grouping Explanation
Substitution of the IRFP054NPBF is determined by compatibility across the following critical parameters:
Package Compatibility: Both the main part and substitute must use the TO-247AC through-hole package to ensure mechanical and thermal interface compatibility.
Voltage Rating: The substitute part must have a drain-to-source voltage rating equal to or greater than 55V to maintain safe operation within the original circuit design envelope.
Current Capability: The substitute must support continuous drain current at or above 81A to fulfill the original circuit's current requirements.
Gate Drive Voltage: Both parts operate at 10V maximum on-state resistance specification, ensuring compatible gate drive circuits.
Temperature Range: The operating temperature range of -55°C to 175°C must be maintained or exceeded by the substitute.
Compliance Standards: Both parts must maintain RoHS3 compliance and REACH unaffected status for regulatory consistency.
The IRFP3306PBF meets all substitution criteria while offering enhanced electrical performance characteristics.
Parameter Comparison
| Parameter | IRFP054NPBF | IRFP3306PBF | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 55 | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 81 | 120 | A |
| On-State Resistance (Rds On) | 12 @ 43A, 10V | 4.2 @ 75A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 4 @ 250µA | 4 @ 150µA | V |
| Gate Charge (Qg) @ 10V | 130 | 120 | nC |
| Maximum Gate Voltage (Vgs) | ±20 | ±20 | V |
| Power Dissipation (Max) | 170 | 220 | W |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-247-3 | TO-247-3 | — |
| Series | HEXFET® | HEXFET® | — |
| Product Status | Not For New Designs | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
IRFP3306PBF as Primary Substitute
The IRFP3306PBF is the qualified substitute for the IRFP054NPBF based on the following engineering criteria:
Product Status Alignment: The IRFP3306PBF carries an "Active" product status, ensuring long-term availability and continued manufacturer support. The IRFP054NPBF is designated "Not For New Designs," making the IRFP3306PBF the appropriate choice for ongoing production and new applications.
Regulatory Compliance: Both parts maintain identical RoHS3 compliance and REACH unaffected status, ensuring no regulatory barriers to substitution.
Package Compatibility: Both devices use the TO-247AC through-hole package, providing direct mechanical and thermal interface compatibility without PCB redesign.
Electrical Performance Enhancement: The IRFP3306PBF exceeds the IRFP054NPBF across all critical performance metrics. The 60V voltage rating provides 5V additional margin over the 55V specification. The 120A continuous drain current rating exceeds the 81A requirement by 48%, providing design headroom. The on-state resistance of 4.2 mOhm at 75A represents a 65% reduction compared to the 12 mOhm specification of the IRFP054NPBF, resulting in lower power dissipation and improved thermal performance. The maximum power dissipation rating of 220W exceeds the 170W specification by 29%.
Gate Drive Compatibility: Both parts operate at identical 10V maximum on-state resistance specification and ±20V maximum gate voltage, ensuring existing gate drive circuits require no modification.
Thermal Performance: The IRFP3306PBF's superior on-state resistance and higher power dissipation rating provide improved thermal characteristics, reducing junction temperature rise in equivalent operating conditions.
Frequently Asked Questions (FAQ)
Q: Can the IRFP3306PBF be used as a direct replacement for the IRFP054NPBF without circuit modification?
A: Yes. Both devices share identical package geometry (TO-247AC), gate drive voltage specifications (10V), maximum gate voltage (±20V), and operating temperature range (-55°C to 175°C). The IRFP3306PBF's higher voltage rating (60V vs. 55V), increased current capability (120A vs. 81A), and improved on-state resistance (4.2 mOhm vs. 12 mOhm) make it functionally compatible without requiring circuit redesign.
Q: What is the significance of the IRFP054NPBF being marked "Not For New Designs"?
A: This designation indicates that Infineon Technologies has discontinued active development and marketing of this part number. While existing inventory remains available, the part is no longer recommended for new product development. The IRFP3306PBF, with "Active" status, is the manufacturer's current offering for equivalent applications.
Q: How does the on-state resistance difference affect circuit performance?
A: The IRFP3306PBF's on-state resistance of 4.2 mOhm is significantly lower than the IRFP054NPBF's 12 mOhm. This reduction decreases conduction losses (I²R losses), resulting in lower heat generation, reduced junction temperature, and improved overall circuit efficiency. For a given current level, the IRFP3306PBF will dissipate less power and require less thermal management.
Q: Are there any gate charge differences that affect switching performance?
A: The IRFP3306PBF has a gate charge of 120 nC compared to the IRFP054NPBF's 130 nC, a 7.7% reduction. This slightly lower gate charge may result in marginally faster switching transitions, though both values are comparable and will not significantly impact gate drive circuit design.
Q: Do both parts have identical moisture sensitivity and handling requirements?
A: Yes. Both the IRFP054NPBF and IRFP3306PBF carry Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions. Both parts can be stored and handled under standard industrial conditions without special moisture control measures.
Q: What is the voltage margin provided by the IRFP3306PBF's 60V rating versus the IRFP054NPBF's 55V rating?
A: The IRFP3306PBF provides 5V additional voltage headroom (60V vs. 55V). This 9% increase in voltage rating provides additional safety margin for transient overvoltage conditions and circuit design flexibility, while maintaining full compatibility with circuits designed for 55V operation.
Q: Are the input capacitance values comparable between the two parts?
A: The input capacitance values differ due to measurement at different voltage points: IRFP054NPBF at 2900 pF @ 25V and IRFP3306PBF at 4520 pF @ 50V. Direct comparison is not applicable due to different measurement conditions. However, both values are within typical ranges for devices in this performance class and will not significantly impact gate drive circuit design.
Q: Can the IRFP054NPBF be used in applications where the IRFP3306PBF is specified?
A: No. The IRFP054NPBF has lower voltage (55V vs. 60V), current (81A vs. 120A), and power dissipation (170W vs. 220W) ratings. Using the IRFP054NPBF in an application designed for the IRFP3306PBF could result in device overstress and failure. Substitution must proceed from the newer, higher-rated device to the older device only when circuit requirements are confirmed to be within the lower device's specifications.
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