IRFP054 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFP054 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 70A continuous drain current in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing applications and new designs. Active alternatives with comparable electrical characteristics and identical packaging are available to maintain circuit functionality and performance.

Substiute Parts

IRFP054
Vishay SiliconixIn Stock: 2033IRFP054 Datasheet
IRFP054
Current Part
IRFP054PBF
Vishay SiliconixIn Stock: 15299IRFP054PBF Datasheet
IRFP054PBF
Direct
IRFP054NPBF
Infineon TechnologiesIn Stock: 19389IRFP054NPBF Datasheet
IRFP054NPBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 70 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 14 mOhm @ 54A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 160 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ Vds 4500 pF @ 25V
Power Dissipation (Max) 230 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3

Substitute Part Grouping Explanation

Substitution of the IRFP054 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Package / Case: TO-247-3
  • Mounting Type: Through Hole
  • Drain to Source Voltage (Vdss): 60V minimum
  • Continuous Drain Current (Id): 70A minimum
  • Operating Temperature Range: -55°C to 175°C minimum
  • Gate Voltage (Vgs): ±20V maximum

Direct Equivalents maintain identical electrical specifications across all parameters listed above. These parts are pin-compatible and functionally interchangeable without circuit modification.

Functional Alternatives meet or exceed the primary substitution criteria but may exhibit variations in secondary parameters such as gate charge, input capacitance, or on-state resistance. These parts are suitable for applications where the primary electrical requirements are satisfied, provided the circuit design accommodates minor parameter variations.

Parameter Comparison

Parameter IRFP054 IRFP054PBF IRFP054NPBF
Manufacturer Vishay Siliconix Vishay Siliconix Infineon Technologies
Product Status Obsolete Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Vdss (V) 60 60 55
Id @ 25°C (A) 70 70 81
Rds On (Max) @ Id, Vgs (mOhm) 14 @ 54A, 10V 14 @ 54A, 10V 12 @ 43A, 10V
Vgs(th) @ Id (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA
Gate Charge (Qg) @ Vgs (nC) 160 @ 10V 160 @ 10V 130 @ 10V
Vgs (Max) (V) ±20 ±20 ±20
Ciss @ Vds (pF) 4500 @ 25V 4500 @ 25V 2900 @ 25V
Power Dissipation (Max) (W) 230 230 170
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175
Package / Case TO-247-3 TO-247-3 TO-247-3
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFP054PBF (Vishay Siliconix)

The IRFP054PBF is a direct electrical equivalent to the IRFP054, maintaining identical specifications across all primary parameters. This part is currently in active production status and is ROHS3 compliant, making it the preferred choice for replacement applications. The IRFP054PBF is suitable for both legacy system maintenance and new design implementations where the IRFP054 specification is required. Availability is confirmed at 15,226 units in stock.

IRFP054NPBF (Infineon Technologies)

The IRFP054NPBF is classified as "Not For New Designs" and exhibits parameter variations relative to the IRFP054. The drain-to-source voltage is reduced to 55V, and maximum power dissipation is reduced to 170W. The continuous drain current is increased to 81A, and on-state resistance is improved to 12mOhm. Gate charge is reduced to 130nC, and input capacitance is reduced to 2900pF. This part is suitable for applications where the reduced voltage rating and power dissipation are acceptable and where the improved on-state resistance and reduced gate charge provide circuit benefits. The IRFP054NPBF is ROHS3 compliant and available at 19,292 units in stock.

Frequently Asked Questions (FAQ)

Q: Can IRFP054PBF be used as a direct replacement for IRFP054?

A: Yes. The IRFP054PBF is electrically and mechanically identical to the IRFP054. Both devices share the same drain-to-source voltage (60V), continuous drain current (70A), on-state resistance (14mOhm), gate charge (160nC), and input capacitance (4500pF). The TO-247-3 package and through-hole mounting are identical. The primary difference is product status: IRFP054PBF is active and ROHS3 compliant, while IRFP054 is obsolete and non-compliant.

Q: Is IRFP054NPBF compatible with circuits designed for IRFP054?

A: Compatibility depends on circuit design margins. The IRFP054NPBF has a lower drain-to-source voltage rating (55V versus 60V) and reduced maximum power dissipation (170W versus 230W). Applications operating near the 60V limit or requiring 230W dissipation cannot use this substitute. However, applications with design margins can benefit from the improved on-state resistance (12mOhm), reduced gate charge (130nC), and reduced input capacitance (2900pF).

Q: What is the difference between IRFP054 and IRFP054PBF packaging?

A: The IRFP054 is supplied without specified packaging, while IRFP054PBF is supplied in tube packaging. Both use the TO-247-3 through-hole package. The tube packaging of IRFP054PBF provides improved handling and storage protection during distribution.

Q: Are all three parts ROHS compliant?

A: No. The IRFP054 is RoHS non-compliant. Both IRFP054PBF and IRFP054NPBF are ROHS3 compliant. For applications requiring RoHS compliance, IRFP054PBF or IRFP054NPBF must be selected.

Q: Which substitute part should be selected for new designs?

A: IRFP054PBF is the recommended choice for new designs. It maintains full electrical equivalence to the IRFP054 specification, is in active production status, and is ROHS3 compliant. IRFP054NPBF is designated "Not For New Designs" and should be reserved for legacy system maintenance only.

Q: How do gate charge differences affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET. IRFP054 and IRFP054PBF require 160nC at 10V gate voltage, while IRFP054NPBF requires 130nC. Lower gate charge reduces switching losses and allows faster switching speeds. In applications with high switching frequencies, the reduced gate charge of IRFP054NPBF may provide efficiency benefits.

Q: What is the significance of input capacitance differences?

A: Input capacitance (Ciss) affects gate drive requirements and switching speed. IRFP054 and IRFP054PBF have 4500pF input capacitance, while IRFP054NPBF has 2900pF. Lower input capacitance reduces gate drive current requirements and enables faster switching transitions. This difference is significant in high-frequency switching applications.

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