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IRFP048N N-Channel Power MOSFET Equivalent & Substitute Parts
Part Overview
The IRFP048N is an N-Channel power MOSFET manufactured by Infineon Technologies, designed for high-current switching applications in the 55V class. This device features a TO-247AC package and is rated for 64A continuous drain current with 140W power dissipation capability.
The IRFP048N is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 55 | V |
| Continuous Drain Current (Id) @ 25°C | 64 | A |
| On-State Resistance (Rds On Max) @ Id, Vgs | 16 mOhm @ 37A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 89 | nC @ 10V |
| Power Dissipation (Max) | 140 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-247-3 | Through Hole |
| Input Capacitance (Ciss Max) @ Vds | 1900 | pF @ 25V |
Substitute Part Grouping Explanation
Substitute parts for the IRFP048N are identified based on electrical and mechanical compatibility within the N-Channel power MOSFET category. The substitution logic is based on the following criteria:
Primary Compatibility Parameters:
- FET Type: N-Channel configuration
- Package: TO-247-3 (through-hole mounting)
- Drain-Source Voltage Rating: Equal to or greater than 55V
- Continuous Drain Current: Equal to or greater than 64A
- Gate Drive Voltage: 10V maximum Rds On specification
- Operating Temperature Range: -55°C to 175°C minimum
- Mounting Type: Through-hole
The substitute parts identified (IRFP048PBF and IRFP048RPBF) meet or exceed all primary compatibility parameters. Both substitutes are manufactured by Vishay Siliconix and share the same base product number (IRFP048), indicating design family compatibility.
Parameter Comparison
| Parameter | IRFP048N (Infineon) | IRFP048PBF (Vishay) | IRFP048RPBF (Vishay) |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Vishay Siliconix | Vishay Siliconix |
| FET Type | N-Channel | N-Channel | N-Channel |
| Drain to Source Voltage (Vdss) | 55V | 60V | 60V |
| Continuous Drain Current (Id) @ 25°C | 64A | 70A | 70A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 37A, 10V | 18 mOhm @ 44A, 10V | 18 mOhm @ 44A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 89 nC @ 10V | 110 nC @ 10V | 110 nC @ 10V |
| Power Dissipation (Max) | 140W | 190W | 190W |
| Operating Temperature Range | -55 to 175°C | -55 to 175°C | -55 to 175°C |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Input Capacitance (Ciss Max) @ Vds | 1900 pF @ 25V | 2400 pF @ 25V | 2400 pF @ 25V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Product Status | Obsolete | Active | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IRFP048PBF and IRFP048RPBF are direct substitutes for the obsolete IRFP048N based on the following engineering criteria:
-
Electrical Compatibility: Both substitute parts exceed the voltage and current ratings of the original IRFP048N. The 60V Vdss rating provides margin above the 55V requirement, and the 70A continuous drain current exceeds the 64A specification. Gate drive characteristics (Vgs(th), Vgs Max) are identical.
-
Thermal Performance: The substitute parts offer superior power dissipation capability (190W vs. 140W), providing additional thermal margin in applications.
-
Package Compatibility: Both substitutes maintain the TO-247-3 through-hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs.
-
Regulatory Compliance: IRFP048PBF and IRFP048RPBF are ROHS3 compliant, addressing modern regulatory requirements that the obsolete IRFP048N does not meet.
-
Product Availability: Both substitute parts are classified as Active products with documented inventory, ensuring long-term supply chain viability compared to the obsolete status of the IRFP048N.
-
Design Family Alignment: All three parts share the IRFP048 base product number, indicating design family compatibility and similar electrical characteristics within the N-Channel power MOSFET class.
Frequently Asked Questions (FAQ)
Q: Can IRFP048PBF and IRFP048RPBF be used interchangeably with IRFP048N?
A: Yes. Both substitute parts meet or exceed all primary electrical and mechanical compatibility parameters. The higher voltage rating (60V vs. 55V), increased current capability (70A vs. 64A), and superior power dissipation (190W vs. 140W) ensure functional compatibility in applications designed for the IRFP048N.
Q: What is the difference between IRFP048PBF and IRFP048RPBF?
A: Both parts are manufactured by Vishay Siliconix and share identical electrical specifications. The primary difference is packaging format: IRFP048PBF is supplied in Tube packaging, while IRFP048RPBF is also supplied in Tube packaging. Both are ROHS3 compliant and Active products. Selection between these two should be based on inventory availability and procurement requirements.
Q: Will the higher gate charge (110 nC vs. 89 nC) of the substitute parts affect circuit performance?
A: The gate charge difference reflects the slightly larger die size in the substitute parts, which contributes to their higher current and power ratings. This parameter affects gate drive circuit design but does not prevent substitution. Gate drive circuits designed for the IRFP048N will function with the substitute parts; however, gate drive timing may be slightly longer due to the increased gate charge.
Q: Are there any thermal considerations when substituting these parts?
A: The substitute parts offer superior thermal performance (190W vs. 140W power dissipation). This provides additional thermal margin and may allow for reduced heatsink requirements or improved reliability in thermally constrained applications. Existing thermal designs for the IRFP048N will remain valid with the substitute parts.
Q: Why is the IRFP048N obsolete while the substitute parts are Active?
A: The IRFP048N represents an older generation of power MOSFET technology from Infineon. The Vishay Siliconix IRFP048 series represents current-generation equivalents with improved specifications, regulatory compliance (ROHS3), and ongoing manufacturing support. Substitution to Active products ensures long-term design sustainability.
Q: Is PCB layout modification required when substituting these parts?
A: No. All three parts use the TO-247-3 package with identical pin configuration and mechanical dimensions. Existing PCB layouts, heatsink mounting interfaces, and thermal management designs are fully compatible without modification.
Q: What is the impact on RoHS compliance?
A: The IRFP048N is RoHS non-compliant, while both substitute parts (IRFP048PBF and IRFP048RPBF) are ROHS3 compliant. Substitution to either part addresses RoHS compliance requirements for new designs or product updates.
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