IRFL210PBF N-Channel MOSFET 200V 960mA Equivalent & Substitute Parts

Part Overview

The IRFL210PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 960mA continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete product status. Due to its obsolescence and limited availability relative to active alternatives, equivalent substitute parts are necessary to maintain design continuity and ensure long-term supply chain reliability. Substitute parts listed below maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	960	mA
Rds On (Max) @ Id, Vgs	1.5	Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	140	pF @ 25V
Power Dissipation (Max)	2 (Ta), 3.1 (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFL210PBF are selected based on strict electrical and mechanical compatibility criteria. All substitute parts maintain the following core parameters:

Critical Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA (SOT-223 variants)
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Electrical Performance Criteria: Substitute parts are grouped by continuous drain current capacity and on-resistance characteristics. The IRFL210PBF operates at 960mA continuous drain current with 1.5Ohm maximum on-resistance at 580mA, 10V. Substitute parts either match or exceed these specifications while maintaining the same voltage rating and thermal operating range.

Parameter Comparison

Parameter	IRFL210PBF (Vishay)	BSP297H6327XTSA1 (Infineon)	STN1NF20 (STMicroelectronics)	STN4NF20L (STMicroelectronics)	ZVNL120GTA (Diodes)
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	200V	200V	200V	200V	200V
Id @ 25°C	960mA (Tc)	660mA (Ta)	1A (Tc)	1A (Tc)	320mA (Ta)
Rds On (Max) @ 10V	1.5Ohm @ 580mA	1.8Ohm @ 660mA	1.5Ohm @ 500mA	1.5Ohm @ 500mA	10Ohm @ 250mA, 5V
Vgs(th) (Max) @ Id	4V @ 250µA	1.8V @ 400µA	4V @ 250µA	3V @ 250µA	1.5V @ 1mA
Gate Charge (Qg) @ 10V	8.2nC	16.1nC	5.7nC	0.9nC	—
Ciss (Max) @ 25V	140pF	357pF	90pF	150pF	85pF
Power Dissipation (Max)	2W (Ta), 3.1W (Tc)	1.8W (Ta)	2W (Ta)	3.3W (Tc)	2W (Ta)
Operating Temperature	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Package	SOT-223	PG-SOT223-4	SOT-223	SOT-223	SOT-223-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: STN1NF20 (STMicroelectronics)

The STN1NF20 is the closest functional equivalent to the IRFL210PBF. Both devices share identical drain-to-source voltage (200V), equivalent on-resistance (1.5Ohm @ 10V), matching gate threshold voltage (4V @ 250µA), and identical power dissipation rating (2W Ta). The STN1NF20 is classified as active product status with full ROHS3 compliance and unlimited moisture sensitivity rating. Inventory availability is 44,095 units.

Secondary Substitute: STN4NF20L (STMicroelectronics)

The STN4NF20L offers enhanced thermal performance with 3.3W maximum power dissipation at Tc, compared to 2W for the IRFL210PBF. This device maintains 200V Vdss, 1.5Ohm on-resistance, and operates across the same temperature range. The STN4NF20L features significantly lower gate charge (0.9nC vs. 8.2nC), enabling faster switching characteristics. Product status is active with ROHS3 compliance. Inventory availability is 64,100 units.

Alternative Substitute: BSP297H6327XTSA1 (Infineon Technologies)

The BSP297H6327XTSA1 maintains 200V Vdss rating and SOT-223 package compatibility. This device operates at 660mA continuous drain current with 1.8Ohm on-resistance, representing a lower current rating than the IRFL210PBF. The BSP297H6327XTSA1 is classified as active product status with ROHS3 compliance and REACH unaffected designation. Inventory availability is 480,400 units, the highest among all substitutes.

Limited Substitute: ZVNL120GTA (Diodes Incorporated)

The ZVNL120GTA maintains 200V Vdss and SOT-223 package compatibility but operates at only 320mA continuous drain current with significantly higher on-resistance (10Ohm @ 250mA, 5V). This device is suitable only for applications where the lower current rating and higher on-resistance are acceptable. Product status is active with ROHS3 compliance and REACH unaffected designation. Inventory availability is 2,503 units.

Frequently Asked Questions (FAQ)

Q: Can the STN1NF20 directly replace the IRFL210PBF in all applications?

A: The STN1NF20 is electrically compatible with the IRFL210PBF across all specified parameters: 200V Vdss, 1.5Ohm on-resistance at 10V, 4V gate threshold voltage, and 2W power dissipation. Both devices use identical SOT-223 packaging. Direct substitution is supported for applications operating within these electrical specifications.

Q: What is the primary advantage of the STN4NF20L over the STN1NF20?

A: The STN4NF20L provides enhanced thermal performance with 3.3W maximum power dissipation at Tc, compared to 2W for the STN1NF20. Additionally, the STN4NF20L features significantly lower gate charge (0.9nC vs. 5.7nC), resulting in faster switching response. Both devices maintain identical on-resistance and voltage ratings.

Q: Why is the ZVNL120GTA listed as a limited substitute?

A: The ZVNL120GTA operates at only 320mA continuous drain current, substantially below the IRFL210PBF rating of 960mA. Additionally, its on-resistance is 10Ohm at 5V, significantly higher than the 1.5Ohm specification of the IRFL210PBF. This device is suitable only for applications with reduced current requirements and where higher on-resistance is acceptable.

Q: Are all substitute parts available in the same SOT-223 package?

A: All substitute parts are available in SOT-223 variants compatible with TO-261-4 and TO-261AA package specifications. The BSP297H6327XTSA1 uses PG-SOT223-4 designation, the STN1NF20 and STN4NF20L use standard SOT-223, and the ZVNL120GTA uses SOT-223-3. All variants are mechanically compatible with standard SOT-223 footprints.

Q: What is the inventory status of substitute parts?

A: All substitute parts are classified as active product status with current inventory availability. STN4NF20L has the highest availability at 64,100 units, followed by BSP297H6327XTSA1 at 480,400 units, STN1NF20 at 44,095 units, and ZVNL120GTA at 2,503 units. The original IRFL210PBF has 2,199 units available but is classified as obsolete.

Q: Do all substitute parts meet RoHS3 compliance requirements?

A: All substitute parts listed are ROHS3 compliant. The IRFL210PBF is also ROHS3 compliant. All devices maintain moisture sensitivity level 1 (unlimited), indicating no special handling requirements during storage or assembly.

Q: What is the gate charge difference between substitute options?

A: Gate charge varies significantly among substitutes. The STN4NF20L has the lowest gate charge at 0.9nC, followed by STN1NF20 at 5.7nC, IRFL210PBF at 8.2nC, and BSP297H6327XTSA1 at 16.1nC. Lower gate charge enables faster switching transitions and reduced driver power consumption. The ZVNL120GTA gate charge specification is not provided in available data.

Q: Are there thermal performance differences between substitutes?

A: Power dissipation ratings differ among substitutes. The STN4NF20L offers the highest thermal capability at 3.3W (Tc), while the BSP297H6327XTSA1 is rated at 1.8W (Ta). The STN1NF20 and ZVNL120GTA are both rated at 2W (Ta), matching the IRFL210PBF. Selection should account for application thermal requirements and heat dissipation capabilities.

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