IRFL210 Equivalent & Substitute Parts

Part Overview

The IRFL210 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 960mA continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRFL210

Vishay SiliconixIn Stock: 6624IRFL210 Datasheet

Current PartRFQ

BSP297H6327XTSA1

Infineon TechnologiesIn Stock: 480425BSP297H6327XTSA1 Datasheet

MFR RecommendedRFQ

STN1NF20

STMicroelectronicsIn Stock: 44113STN1NF20 Datasheet

MFR RecommendedRFQ

STN4NF20L

STMicroelectronicsIn Stock: 64184STN4NF20L Datasheet

MFR RecommendedRFQ

ZVNL120GTA

Diodes IncorporatedIn Stock: 2564ZVNL120GTA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFL210 are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Matching Parameters:

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Mounting Type: Surface Mount
• Package: SOT-223 (TO-261-4, TO-261AA)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Functional Compatibility Parameters:

• Continuous Drain Current (Id) @ 25°C: Equal to or greater than 960mA
• Rds On (Max) @ 10V: Equal to or less than 1.5 Ohm
• Gate Threshold Voltage Vgs(th): Within ±20V maximum gate voltage specification
• Power Dissipation: Sufficient for application thermal requirements

The four substitute parts listed below meet these criteria with varying performance characteristics in drain current capacity, on-resistance, and power dissipation ratings.

Parameter Comparison

Engineering Selection Recommendations

STN1NF20 (STMicroelectronics)

The STN1NF20 provides the closest electrical match to the IRFL210. It maintains identical Vdss (200V), equivalent Rds On (1.5 Ohm @ 10V), and matching gate threshold voltage (4V @ 250µA). Continuous drain current is rated at 1A (Tc), exceeding the IRFL210 specification of 960mA. Power dissipation is rated at 2W (Ta), matching the IRFL210 specification. The device is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain support. The STripFET™ II series technology provides proven performance in equivalent applications.

STN4NF20L (STMicroelectronics)

The STN4NF20L offers enhanced thermal performance with power dissipation rated at 3.3W (Tc), exceeding the IRFL210 by 6% when measured at case temperature. Electrical parameters are equivalent to the STN1NF20, with identical Vdss, Rds On, and drain current ratings. Gate charge is significantly reduced (0.9 nC @ 10V versus 8.2 nC for IRFL210), enabling faster switching characteristics. ROHS3 compliance and active product status support long-term design continuity. This device is suitable for applications requiring improved thermal margin or higher switching frequency operation.

BSP297H6327XTSA1 (Infineon Technologies)

The BSP297H6327XTSA1 meets the 200V Vdss requirement and provides Rds On of 1.8 Ohm @ 10V, representing a 20% increase in on-resistance compared to the IRFL210. Continuous drain current is rated at 660mA (Ta), approximately 31% below the IRFL210 specification. Power dissipation is 1.8W (Ta), approximately 10% below the IRFL210. This device is suitable for applications where drain current requirements do not exceed 660mA and thermal dissipation is not a limiting factor. ROHS3 compliance and active product status are confirmed. The SIPMOS® series provides established performance in industrial applications.

ZVNL120GTA (Diodes Incorporated)

The ZVNL120GTA meets the 200V Vdss requirement but exhibits significantly higher on-resistance (10 Ohm @ 5V), representing a 567% increase compared to the IRFL210. Continuous drain current is rated at 320mA (Ta), approximately 67% below the IRFL210 specification. This device is suitable only for applications with substantially reduced current requirements and where on-resistance is not a critical design parameter. ROHS3 compliance and active product status are confirmed. This part should be considered only when current and power dissipation requirements are substantially lower than the IRFL210 design specification.

Frequently Asked Questions (FAQ)

Q: Can the STN1NF20 directly replace the IRFL210 in existing designs?

A: The STN1NF20 is electrically compatible with the IRFL210 for applications operating at or below 960mA drain current. Both devices share identical Vdss (200V), Rds On (1.5 Ohm @ 10V), gate threshold voltage (4V @ 250µA), and power dissipation (2W Ta). The SOT-223 package pinout is identical. No circuit modifications are required for direct substitution in existing PCB layouts.

Q: What is the primary difference between STN1NF20 and STN4NF20L?

A: Both devices share identical electrical ratings for Vdss, Rds On, and drain current. The primary difference is gate charge: STN4NF20L exhibits significantly lower gate charge (0.9 nC @ 10V versus 5.7 nC for STN1NF20). This enables faster switching transitions in STN4NF20L, making it preferable for high-frequency switching applications. Power dissipation is also higher in STN4NF20L (3.3W Tc versus 2W Ta for STN1NF20), providing improved thermal performance.

Q: Why is the ZVNL120GTA listed as a substitute if it has lower current rating and higher on-resistance?

A: The ZVNL120GTA meets the mandatory substitution criteria (N-Channel, 200V Vdss, SOT-223 package, -55°C to 150°C operating range, MSL 1). However, it is suitable only for applications where actual drain current requirements are 320mA or lower and where the 10 Ohm on-resistance does not exceed thermal or efficiency constraints. It should not be selected for designs requiring the full 960mA current capacity of the IRFL210.

Q: Are all substitute parts RoHS compliant?

A: All four substitute parts (BSP297H6327XTSA1, STN1NF20, STN4NF20L, ZVNL120GTA) are ROHS3 compliant. The original IRFL210 is RoHS non-compliant. Designs transitioning from IRFL210 to any of these substitutes will achieve RoHS3 compliance.

Q: What is the impact of higher input capacitance in the BSP297H6327XTSA1?

A: The BSP297H6327XTSA1 exhibits input capacitance (Ciss) of 357 pF @ 25V, compared to 140 pF for the IRFL210. Higher input capacitance increases gate charge requirements and may extend switching transition times. This affects gate driver design and power dissipation during switching events. Applications with tight switching frequency or gate drive current constraints should prioritize STN1NF20 or STN4NF20L, which exhibit lower input capacitance values (90 pF and 150 pF respectively).

Q: Can the BSP297H6327XTSA1 be used in high-current applications?

A: The BSP297H6327XTSA1 is rated for 660mA continuous drain current (Ta), approximately 31% below the IRFL210 specification of 960mA. It is not suitable for applications requiring sustained drain currents above 660mA. For applications requiring the full 960mA capacity or higher, STN1NF20 or STN4NF20L are the appropriate selections.

Q: What packaging considerations apply to these substitute parts?

A: All substitute parts are supplied in SOT-223 surface mount packages with identical pinout to the IRFL210 (TO-261-4, TO-261AA). PCB layout modifications are not required for direct substitution. All devices maintain MSL 1 (Unlimited) moisture sensitivity classification, requiring no changes to storage or handling procedures.

Q: Which substitute part offers the best thermal performance?

A: The STN4NF20L provides the highest power dissipation rating at 3.3W (Tc), approximately 6% higher than the IRFL210 specification of 3.1W (Tc). This device is recommended for applications where thermal margin is critical or where junction temperature must be minimized. The STN4NF20L also exhibits the lowest gate charge (0.9 nC @ 10V), reducing switching losses in high-frequency applications.