IRFL1006PBF N-Channel MOSFET 60V 1.6A Equivalent & Substitute Parts

Part Overview

The IRFL1006PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the SOT-223 package. This device features a 60V drain-to-source voltage rating with 1.6A continuous drain current capability and 1W power dissipation. The IRFL1006PBF is classified as an obsolete product, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and legacy system maintenance.

Substiute Parts

IRFL1006PBF
Infineon TechnologiesIn Stock: 23709IRFL1006PBF Datasheet
IRFL1006PBF
Current Part
BSP295H6327XTSA1
Infineon TechnologiesIn Stock: 43296BSP295H6327XTSA1 Datasheet
BSP295H6327XTSA1
MFR Recommended
ZVN4306GTA
Diodes IncorporatedIn Stock: 15516ZVN4306GTA Datasheet
ZVN4306GTA
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 1.6 A
Power Dissipation (Max) 1 W
Rds On (Max) @ 1.6A, 10V 220 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 8 nC
Input Capacitance (Ciss) @ 25V 160 pF
Operating Temperature Range -55 to 150 °C
Package Type SOT-223 -
Mounting Type Surface Mount -

Substitute Part Grouping Explanation

Substitution of the IRFL1006PBF is determined by strict electrical and mechanical compatibility within the following criteria:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 60V minimum
  • Package Type: SOT-223 or equivalent TO-261-4/TO-261AA footprint
  • Mounting Type: Surface Mount
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: -55°C to 150°C minimum

Allowable Variation Parameters:

  • Continuous Drain Current (Id): Equal to or greater than 1.6A
  • Power Dissipation: Equal to or greater than 1W
  • Rds On (Max): Equal to or less than 220mOhm (lower resistance acceptable)
  • Gate Charge (Qg): Equal to or less than 8nC (lower charge acceptable)
  • Input Capacitance (Ciss): Equal to or less than 160pF (lower capacitance acceptable)
  • Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification

The substitute parts listed below meet all mandatory parameters and maintain electrical compatibility for direct replacement applications.

Parameter Comparison

Parameter IRFL1006PBF BSP295H6327XTSA1 ZVN4306GTA Unit
Manufacturer Infineon Technologies Infineon Technologies Diodes Incorporated -
Product Status Obsolete Active Active -
Drain to Source Voltage (Vdss) 60 60 60 V
Continuous Drain Current (Id) @ 25°C 1.6 1.8 2.1 A
Power Dissipation (Max) 1 1.8 3 W
Rds On (Max) @ 10V 220 @ 1.6A 300 @ 1.8A 330 @ 3A mOhm
Gate Threshold Voltage (Vgs(th)) 4 @ 250µA 1.8 @ 400µA 3 @ 1mA V
Gate Charge (Qg) @ 10V 8 17 - nC
Input Capacitance (Ciss) @ 25V 160 368 350 pF
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C
Package Type SOT-223 PG-SOT223-4 SOT-223-3 -
Mounting Type Surface Mount Surface Mount Surface Mount -
RoHS Status - ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

BSP295H6327XTSA1 (Infineon Technologies)

The BSP295H6327XTSA1 is an active product from the same manufacturer as the IRFL1006PBF, providing direct manufacturer continuity. This substitute offers 1.8A continuous drain current and 1.8W power dissipation, both exceeding the original specification. The device maintains the same 60V Vdss rating and operating temperature range. The BSP295H6327XTSA1 is ROHS3 compliant and carries REACH Unaffected status, meeting modern regulatory requirements. The higher gate charge (17nC versus 8nC) and increased input capacitance (368pF versus 160pF) represent trade-offs in switching characteristics but remain within acceptable parameters for most applications. This part is recommended for designs requiring manufacturer consistency and active product support.

ZVN4306GTA (Diodes Incorporated)

The ZVN4306GTA is an active product from Diodes Incorporated offering the highest current rating at 2.1A and maximum power dissipation of 3W. This device maintains the 60V Vdss specification and full operating temperature range compatibility. The ZVN4306GTA is ROHS3 compliant and REACH Unaffected. The increased current and power handling capabilities provide additional design margin. The higher input capacitance (350pF) and Rds On specification (330mOhm @ 3A) reflect different device optimization compared to the original part. This substitute is suitable for applications requiring enhanced thermal performance or higher current capacity within the same voltage class.

Both substitute parts are currently in active production with substantial inventory availability, ensuring long-term supply chain reliability for legacy system support and new designs.

Frequently Asked Questions (FAQ)

Q: Can the BSP295H6327XTSA1 or ZVN4306GTA be used as direct drop-in replacements for the IRFL1006PBF?

A: Both substitute parts are mechanically and electrically compatible for direct PCB replacement in SOT-223 footprints. The pin configurations and package dimensions are equivalent. However, the higher input capacitance and gate charge of these substitutes may affect switching speed in high-frequency applications. Circuit simulation or bench testing is appropriate for applications operating above 1MHz switching frequency.

Q: What are the key differences between the two substitute options?

A: The BSP295H6327XTSA1 maintains manufacturer continuity with Infineon Technologies and offers moderate performance enhancement (1.8A, 1.8W). The ZVN4306GTA from Diodes Incorporated provides maximum current and power ratings (2.1A, 3W) but with higher parasitic capacitance. Selection depends on whether manufacturer consistency or maximum thermal headroom is prioritized.

Q: Are there any compliance or regulatory differences between these parts?

A: All three devices carry identical REACH Unaffected and ECCN EAR99 classifications. The substitute parts are ROHS3 compliant, meeting current environmental standards. Moisture sensitivity level is uniform at MSL 1 (Unlimited) across all options.

Q: How do the gate charge and input capacitance differences affect circuit design?

A: The IRFL1006PBF features lower gate charge (8nC) and input capacitance (160pF), enabling faster switching transitions with lower gate drive power requirements. The BSP295H6327XTSA1 (17nC, 368pF) and ZVN4306GTA (350pF) require proportionally higher gate drive current and exhibit slightly slower switching characteristics. Applications with gate drive circuits designed for the original part specifications should evaluate whether the increased capacitive loading remains within driver output current limits.

Q: What is the significance of the different Rds On specifications?

A: The IRFL1006PBF specifies 220mOhm maximum at 1.6A and 10V gate voltage. The BSP295H6327XTSA1 specifies 300mOhm at 1.8A and 10V, while the ZVN4306GTA specifies 330mOhm at 3A and 10V. Higher Rds On values result in increased on-state power dissipation. For applications operating at or near the original 1.6A specification, the substitute parts will generate slightly higher heat. Thermal analysis is recommended for power-sensitive applications.

Q: Are all three parts available in the same packaging format?

A: All three devices use SOT-223 package variants (SOT-223, PG-SOT223-4, SOT-223-3) with equivalent TO-261-4 and TO-261AA footprints. PCB layout compatibility is maintained across all options without redesign requirements.

Q: What inventory status should be considered for production planning?

A: The IRFL1006PBF (obsolete) has 23,657 pieces in stock. The BSP295H6327XTSA1 (active) has 43,200 pieces available. The ZVN4306GTA (active) has 15,420 pieces in stock. For new designs or long-term production, the active substitute parts provide superior supply chain continuity and availability assurance.

Request Quote (Ships tomorrow)