IRFL1006 N-Channel MOSFET 60V 1.6A Equivalent & Substitute Parts

Part Overview

The IRFL1006 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the SOT-223 package. This device operates at 60V drain-to-source voltage with a continuous drain current rating of 1.6A at 25°C and maximum power dissipation of 1W. The IRFL1006 is classified as an obsolete product, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Substiute Parts

IRFL1006

Infineon TechnologiesIn Stock: 3908IRFL1006 Datasheet

Current PartRFQ

BSP295H6327XTSA1

Infineon TechnologiesIn Stock: 43296BSP295H6327XTSA1 Datasheet

MFR RecommendedRFQ

ZXMN6A11GTA

Diodes IncorporatedIn Stock: 6147ZXMN6A11GTA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFL1006 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 60V
• FET Type: Must be N-Channel MOSFET
• Mounting Type: Must be Surface Mount
• Package Compatibility: Must be compatible with SOT-223 footprint (TO-261-4, TO-261AA)
• Operating Temperature Range: Must span -55°C to 150°C (TJ)
• Gate Voltage Rating (Vgs Max): Must be ±20V or greater

Performance Parameters for Substitution:

• Continuous Drain Current (Id): Substitute must meet or exceed 1.6A at 25°C
• Rds On (Max): Substitute must not exceed 220mOhm at specified Id and Vgs conditions
• Power Dissipation: Substitute must support minimum 1W at Ta

The identified substitute parts BSP295H6327XTSA1 and ZXMN6A11GTA satisfy these criteria with enhanced electrical performance characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

BSP295H6327XTSA1 Selection Criteria: The BSP295H6327XTSA1 is an active Infineon Technologies product with ROHS3 compliance. This substitute provides 1.8A continuous drain current, exceeding the IRFL1006 requirement of 1.6A. The device maintains 60V Vdss rating and -55°C to 150°C operating temperature range. Power dissipation capability increases to 1.8W, providing thermal margin. The PG-SOT223-4 package is footprint-compatible with the original SOT-223 specification. Gate threshold voltage is lower at 1.8V, requiring circuit design verification for gate drive compatibility. This substitute is suitable for direct replacement in applications where lower gate threshold and higher current capacity are acceptable.

ZXMN6A11GTA Selection Criteria: The ZXMN6A11GTA is an active Diodes Incorporated product with ROHS3 compliance. This substitute provides superior electrical performance with 3.1A continuous drain current and 120mOhm Rds On at 2.5A, significantly lower than the IRFL1006 specification. Power dissipation capability reaches 2W. The SOT-223-3 package maintains footprint compatibility. Gate charge is reduced to 5.7nC, improving switching speed characteristics. This substitute is suitable for applications requiring enhanced current handling and reduced on-resistance, with gate drive circuit compatibility verification required due to lower threshold voltage of 3V.

Compliance Consideration: Both substitute parts are ROHS3 compliant and REACH unaffected, addressing regulatory requirements absent in the obsolete IRFL1006. Selection between substitutes depends on application current requirements and gate drive circuit design parameters.

Frequently Asked Questions (FAQ)

Q: Can BSP295H6327XTSA1 and ZXMN6A11GTA be used interchangeably with IRFL1006?

A: Both parts meet the critical electrical parameters (60V Vdss, N-Channel MOSFET, surface mount SOT-223 package, -55°C to 150°C operating range). However, they are not directly interchangeable without circuit evaluation. Gate threshold voltage differences (IRFL1006: 4V, BSP295H6327XTSA1: 1.8V, ZXMN6A11GTA: 3V) require gate drive circuit verification. Rds On characteristics differ, affecting power dissipation and thermal management.

Q: What are the package compatibility considerations?

A: IRFL1006 uses SOT-223 package (TO-261-4, TO-261AA). BSP295H6327XTSA1 uses PG-SOT223-4 package, and ZXMN6A11GTA uses SOT-223-3 package. All three packages are mechanically and electrically compatible with standard SOT-223 PCB footprints. Pin configuration must be verified against specific device datasheets before assembly.

Q: Why do the substitute parts have higher gate charge values?

A: BSP295H6327XTSA1 exhibits 17nC gate charge compared to IRFL1006 at 8nC. This reflects different semiconductor process technology and die geometry. Higher gate charge increases gate drive power requirements but does not prevent substitution if gate drive circuitry has adequate current capacity.

Q: Are there current rating differences that affect circuit design?

A: IRFL1006 is rated 1.6A continuous drain current. BSP295H6327XTSA1 provides 1.8A, and ZXMN6A11GTA provides 3.1A. Higher-rated substitutes offer design margin but do not require circuit modification if original design operated below 1.6A. Applications operating at maximum IRFL1006 current must evaluate thermal performance with substitute parts.

Q: What compliance advantages do the substitute parts offer?

A: Both BSP295H6327XTSA1 and ZXMN6A11GTA are ROHS3 compliant, addressing environmental and regulatory requirements. IRFL1006 is RoHS non-compliant. This compliance status is critical for new product designs and markets with mandatory RoHS requirements.

Q: How do Rds On differences impact circuit performance?

A: IRFL1006 specifies 220mOhm Rds On at 1.6A, 10V. BSP295H6327XTSA1 specifies 300mOhm at 1.8A, 10V, resulting in higher on-state power dissipation. ZXMN6A11GTA specifies 120mOhm at 2.5A, 10V, providing lower dissipation. Circuit thermal analysis must account for these differences when selecting substitutes for power-sensitive applications.