IRFL024ZPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFL024ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 5.1A continuous drain current in a surface mount SOT-223 package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	5.1	A
Rds On (Max) @ 10V	57.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	14	nC
Power Dissipation (Max)	1	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-223	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFL024ZPBF is determined by the following critical parameters: N-Channel FET type, MOSFET technology, surface mount SOT-223 package, operating temperature range of -55°C to 150°C, and RoHS3 compliance. The drain-to-source voltage rating, continuous drain current, on-resistance, and gate charge characteristics define the functional performance envelope within which alternatives must operate.

Substitute parts are grouped based on whether they meet or exceed the original specifications:

Group 1 (Direct Upgrade): Parts with equal or higher Vdss, equal or higher Id, lower or equal Rds On, and compatible package/temperature specifications.

Group 2 (Functional Equivalent): Parts with slightly different electrical characteristics but suitable for applications where the IRFL024ZPBF operates below maximum ratings.

Parameter Comparison

Parameter	IRFL024ZPBF (Infineon)	FDT86102LZ (onsemi)	STN3NF06 (STMicroelectronics)	STN3NF06L (STMicroelectronics)
Manufacturer	Infineon Technologies	onsemi	STMicroelectronics	STMicroelectronics
Vdss (V)	55	100	60	60
Id @ 25°C (A)	5.1	6.6	4	4
Rds On @ 10V (mOhm)	57.5	28	100	100
Vgs(th) @ 250µA (V)	4	3	4	2.8
Qg @ 10V (nC)	14	25	13	9
Power Dissipation (W)	1	2.2	3.3	3.3
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-223	SOT-223-4	SOT-223	SOT-223
Product Status	Discontinued	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDT86102LZ (onsemi PowerTrench®): This part provides superior electrical performance with 100V Vdss rating, 6.6A continuous drain current, and significantly lower on-resistance (28 mOhm @ 10V). The higher power dissipation rating (2.2W) and active product status make this suitable for applications requiring enhanced performance margins. The SOT-223-4 package is mechanically compatible with SOT-223 footprints. RoHS3 compliance and -55°C to 150°C operating range match the original specification.

STN3NF06 (STMicroelectronics STripFET™ II): This part operates at 60V Vdss with 4A continuous drain current. The higher on-resistance (100 mOhm @ 10V) and lower gate charge (13 nC) make it suitable for applications where the IRFL024ZPBF operates below maximum current ratings. Active product status and extensive inventory availability support long-term procurement. RoHS3 compliance and temperature range are equivalent.

STN3NF06L (STMicroelectronics STripFET™ II): This variant offers identical electrical ratings to STN3NF06 with optimized gate charge characteristics (9 nC @ 5V) and lower threshold voltage (2.8V @ 250µA). The reduced Vgs(Max) of ±16V versus ±20V requires gate drive circuit verification. Highest inventory availability (72,446 pcs) and active status provide supply chain stability. RoHS3 compliance and temperature range match original specifications.

All substitute parts maintain RoHS3 compliance, REACH unaffected status, and EAR99 ECCN classification consistent with the original IRFL024ZPBF.

Frequently Asked Questions (FAQ)

Q: Can FDT86102LZ directly replace IRFL024ZPBF in existing PCB layouts?

A: The FDT86102LZ uses SOT-223-4 package versus IRFL024ZPBF SOT-223. Both packages share the same physical footprint and pin assignments for drain, gate, and source. Verification of PCB pad compatibility is required before implementation.

Q: What is the primary difference between STN3NF06 and STN3NF06L?

A: Both parts share identical Vdss (60V) and Id (4A) ratings. STN3NF06L features lower gate charge (9 nC @ 5V versus 13 nC @ 10V), lower threshold voltage (2.8V versus 4V), and reduced maximum gate voltage (±16V versus ±20V). STN3NF06L is optimized for lower gate drive voltage applications.

Q: Why is the IRFL024ZPBF discontinued?

A: Product discontinuation is determined by manufacturer lifecycle decisions. The substitute parts listed represent active alternatives with equivalent or superior electrical performance and ongoing manufacturing support.

Q: Which substitute part offers the best on-resistance performance?

A: FDT86102LZ provides the lowest on-resistance at 28 mOhm @ 10V, compared to 57.5 mOhm for IRFL024ZPBF and 100 mOhm for both STN3NF06 variants. Lower on-resistance reduces power dissipation in switching applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. FDT86102LZ, STN3NF06, and STN3NF06L are all ROHS3 compliant with REACH unaffected status, matching the original IRFL024ZPBF environmental compliance profile.

Q: What is the impact of higher Vdss ratings in substitute parts?

A: FDT86102LZ (100V) and STN3NF06/STN3NF06L (60V) provide higher voltage margins than the original 55V rating. These parts are suitable for applications operating below their maximum Vdss without performance degradation. Higher voltage ratings do not negatively impact circuits designed for lower voltages.

Q: Which substitute part has the highest inventory availability?

A: STN3NF06L maintains the highest inventory level at 72,446 pcs, followed by STN3NF06 at 7,792 pcs and FDT86102LZ at 4,200 pcs. Inventory levels support procurement planning for volume production.

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