IRFL024Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFL024Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 5.1A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and procurement continuity. The HEXFET® series device operates across a wide temperature range from -55°C to 150°C and is suitable for general-purpose switching applications requiring moderate power dissipation up to 1W.

Substiute Parts

IRFL024Z
Infineon TechnologiesIn Stock: 6834IRFL024Z Datasheet
IRFL024Z
Current Part
STN3NF06
STMicroelectronicsIn Stock: 7852STN3NF06 Datasheet
STN3NF06
MFR Recommended
STN3NF06L
STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet
STN3NF06L
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 5.1 A (Ta)
On-State Resistance (Rds On) @ 3.1A, 10V 57.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 14 nC
Input Capacitance (Ciss) @ 25V 340 pF
Power Dissipation (Max) 1 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SOT-223 Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFL024Z is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following criteria establish substitution validity:

Primary Substitution Criteria:

  • FET Type: N-Channel (required match)
  • Technology: MOSFET (Metal Oxide) (required match)
  • Package Type: SOT-223 surface mount (required match)
  • Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
  • Continuous Drain Current (Id): Must equal or exceed 5.1A at rated temperature
  • Operating Temperature Range: Must encompass -55°C to 150°C
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
  • On-State Resistance (Rds On): Lower values indicate improved performance but do not disqualify substitution

Identified Substitute Parts:

The STMicroelectronics STN3NF06 and STN3NF06L meet the core substitution criteria. Both devices are N-Channel MOSFETs in SOT-223 packages with Vdss ratings of 60V (exceeding the 55V requirement) and operating temperature ranges of -55°C to 150°C. Both are classified as active products with current manufacturing status, providing long-term availability advantages over the obsolete IRFL024Z.

Parameter Comparison

Parameter IRFL024Z (Main Part) STN3NF06 STN3NF06L Unit
Manufacturer Infineon Technologies STMicroelectronics STMicroelectronics
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 55 60 60 V
Continuous Drain Current (Id) @ 25°C 5.1 (Ta) 4 (Tc) 4 (Tc) A
On-State Resistance (Rds On) @ 10V 57.5 @ 3.1A 100 @ 1.5A 100 @ 1.5A mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 4 2.8 V
Gate Charge (Qg) @ 10V 14 13 9 nC
Input Capacitance (Ciss) @ 25V 340 315 340 pF
Power Dissipation (Max) 1 (Ta) 3.3 (Tc) 3.3 (Tc) W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Package Type SOT-223 SOT-223 SOT-223
Product Status Obsolete Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STN3NF06 Selection Criteria:

The STN3NF06 is an active product with ROHS3 compliance, providing regulatory alignment for new designs and long-term supply chain stability. The 60V Vdss rating provides 5V margin above the IRFL024Z requirement. The 4A continuous drain current rating is lower than the IRFL024Z 5.1A specification; however, this substitution is valid when circuit design margins accommodate the reduced current capacity. The higher Rds On value (100mOhm vs. 57.5mOhm) results in increased power dissipation during conduction, requiring thermal analysis in power-sensitive applications.

STN3NF06L Selection Criteria:

The STN3NF06L offers superior electrical characteristics for direct substitution. The lower gate threshold voltage (2.8V vs. 4V) and reduced gate charge (9nC vs. 14nC) enable faster switching response and lower drive power requirements. The identical input capacitance (340pF) and matching operating temperature range ensure seamless integration. Like the STN3NF06, the 4A continuous drain current requires circuit margin verification. The STN3NF06L is recommended as the primary substitute when design specifications permit the lower current rating and when enhanced switching performance is beneficial.

Compliance Considerations:

Both substitute parts achieve ROHS3 compliance, addressing environmental and regulatory requirements that the non-compliant IRFL024Z cannot satisfy. Both devices maintain REACH unaffected status and EAR99 export classification, matching the original part's regulatory profile.

Frequently Asked Questions (FAQ)

Q: Can the STN3NF06 or STN3NF06L directly replace the IRFL024Z without circuit modification?

A: Direct replacement is possible only when the circuit design accommodates the 4A continuous drain current rating of the substitute parts, which is lower than the IRFL024Z 5.1A specification. The higher Rds On value requires thermal analysis to confirm acceptable power dissipation. No PCB layout changes are required due to identical SOT-223 packaging.

Q: What is the significance of the lower gate threshold voltage in the STN3NF06L?

A: The STN3NF06L gate threshold voltage of 2.8V (versus 4V in the IRFL024Z) enables operation with lower gate drive voltages and reduces gate charge requirements. This improves switching speed and reduces driver power consumption, providing performance benefits in gate-drive-limited applications.

Q: Are there thermal differences between the IRFL024Z and substitute parts?

A: The IRFL024Z is rated for 1W power dissipation at ambient temperature (Ta), while both STN3NF06 variants are rated for 3.3W at case temperature (Tc). The higher Rds On of the substitutes (100mOhm vs. 57.5mOhm) generates more conduction losses. Thermal performance depends on PCB copper area, airflow, and mounting configuration. Thermal modeling is required for applications operating near maximum power limits.

Q: Why is the continuous drain current lower in the substitute parts?

A: The STN3NF06 and STN3NF06L are rated for 4A continuous drain current at case temperature (Tc), compared to the IRFL024Z 5.1A at ambient temperature (Ta). This reflects different thermal measurement standards. Substitution is valid when circuit peak and average current requirements remain below 4A.

Q: What are the advantages of selecting an active product over the obsolete IRFL024Z?

A: Active products ensure long-term availability, consistent manufacturing processes, and access to technical support. The STN3NF06 and STN3NF06L are manufactured by STMicroelectronics with established supply chains. Both achieve ROHS3 compliance, meeting current environmental regulations. Obsolete parts face supply discontinuation and potential quality variability.

Q: Is the SOT-223 package identical across all three parts?

A: Yes. The IRFL024Z, STN3NF06, and STN3NF06L all use the SOT-223 surface mount package with TO-261-4 and TO-261AA case designations. Pin assignments and footprints are identical, enabling direct PCB substitution without layout modifications.

Q: Which substitute part should be selected for new designs?

A: The STN3NF06L is recommended for new designs when circuit specifications accommodate the 4A continuous drain current. The lower gate threshold voltage and reduced gate charge provide switching performance advantages. The STN3NF06 is suitable when cost optimization is prioritized and switching speed requirements are less stringent.

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