IRFL024NPBF N-Channel MOSFET 55V 2.8A SOT-223 Equivalent & Substitute Parts

Part Overview

The IRFL024NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the SOT-223 package. This device operates at 55V drain-to-source voltage with a continuous drain current rating of 2.8A at 25°C and a maximum power dissipation of 1W. The part is currently discontinued at DiGi Electronics, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Suitable alternatives must maintain compatibility with the SOT-223 package footprint and satisfy the electrical requirements of the original application circuit.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	2.8	A (Ta)
Rds On (Max) @ Id, Vgs	75	mOhm @ 2.8A, 10V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18.3	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	400	pF @ 25V
Power Dissipation (Max)	1	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-223	TO-261-4, TO-261AA
FET Type	N-Channel	MOSFET
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRFL024NPBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): Must be equal to or greater than 55V
Package Type: Must be SOT-223 (TO-261-4, TO-261AA)
FET Type: Must be N-Channel MOSFET
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must encompass -55°C to 150°C

Application-Dependent Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 2.8A at rated temperature
Rds On (Max): Lower or equal values are acceptable; higher values may impact circuit performance
Gate Charge (Qg): Lower values reduce switching losses; higher values are acceptable if circuit design permits
Power Dissipation: Must be sufficient for the application thermal environment

The substitute parts listed below satisfy all critical matching parameters and provide electrical characteristics suitable for direct replacement in applications designed for the IRFL024NPBF.

Parameter Comparison

Parameter	IRFL024NPBF	BUK7880-55A/CUX	BUK9880-55A/CUX	STN3NF06	STN3NF06L
Manufacturer	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics
Vdss (V)	55	55	55	60	60
Id @ 25°C (A)	2.8 (Ta)	7 (Tc)	7 (Tc)	4 (Tc)	4 (Tc)
Rds On (Max) (mOhm)	75 @ 2.8A, 10V	80 @ 10A, 10V	73 @ 8A, 10V	100 @ 1.5A, 10V	100 @ 1.5A, 10V
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 1mA	2 @ 1mA	4 @ 250µA	2.8 @ 250µA
Qg (Max) (nC)	18.3 @ 10V	12 @ 10V	11 @ 5V	13 @ 10V	9 @ 5V
Ciss (Max) (pF)	400 @ 25V	500 @ 25V	584 @ 25V	315 @ 25V	340 @ 25V
Power Dissipation (Max) (W)	1 (Ta)	8 (Tc)	8 (Tc)	3.3 (Tc)	3.3 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223
Product Status	Discontinued	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Vdss = 55V, Exact Voltage Match):

BUK7880-55A/CUX and BUK9880-55A/CUX are manufactured by Nexperia USA Inc. and maintain the exact 55V drain-to-source voltage specification of the IRFL024NPBF. Both devices are currently in active production status with substantial inventory availability. The BUK9880-55A/CUX offers superior electrical characteristics, including lower on-resistance (73 mOhm vs. 75 mOhm) and reduced gate charge (11 nC vs. 18.3 nC), resulting in improved switching efficiency. Both Nexperia devices carry AEC-Q100 automotive qualification and ROHS3 compliance, ensuring long-term supply chain stability and regulatory conformance.

Secondary Substitutes (Vdss = 60V, Elevated Voltage Rating):

STN3NF06 and STN3NF06L are manufactured by STMicroelectronics and provide a 60V drain-to-source voltage rating, which exceeds the 55V requirement of the IRFL024NPBF. These devices are suitable for applications where the elevated voltage margin provides additional design headroom. The STN3NF06L variant offers improved gate threshold voltage characteristics (2.8V vs. 4V) and reduced gate charge (9 nC vs. 13 nC), enhancing switching performance. Both STripFET™ II series devices are in active production with robust inventory levels and full ROHS3 compliance.

Selection Criteria:

For direct replacement with identical voltage specification: Select BUK9880-55A/CUX (superior performance) or BUK7880-55A/CUX (equivalent performance)
For applications requiring elevated voltage margin: Select STN3NF06L (optimized switching characteristics) or STN3NF06 (standard performance)
All substitute parts maintain SOT-223 package compatibility, surface mount configuration, and -55°C to 150°C operating temperature range
Verify thermal management capability in target application, as substitute devices exhibit higher power dissipation ratings (3.3W to 8W) compared to the original 1W specification

Frequently Asked Questions (FAQ)

Q: Can BUK9880-55A/CUX be used as a direct replacement for IRFL024NPBF?

A: Yes. Both devices share identical 55V drain-to-source voltage, N-Channel MOSFET topology, SOT-223 package configuration, and -55°C to 150°C operating temperature range. The BUK9880-55A/CUX provides superior electrical performance with lower on-resistance and reduced gate charge. Verify circuit design accommodates the higher power dissipation rating (8W vs. 1W).

Q: What is the difference between BUK7880-55A/CUX and BUK9880-55A/CUX?

A: Both devices maintain 55V Vdss and 7A continuous drain current. The BUK9880-55A/CUX offers lower on-resistance (73 mOhm vs. 80 mOhm) and reduced gate charge (11 nC vs. 12 nC), resulting in improved switching efficiency and reduced power dissipation. Both are suitable substitutes; selection depends on application performance requirements.

Q: Why are STN3NF06 and STN3NF06L rated at 60V instead of 55V?

A: The 60V rating provides additional voltage margin above the 55V requirement of the IRFL024NPBF. This elevated specification is acceptable for direct substitution and offers design flexibility for applications requiring higher voltage headroom. The devices are electrically compatible with 55V circuit designs.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts are available in SOT-223 package (TO-261-4, TO-261AA) with surface mount configuration, ensuring mechanical and electrical compatibility with the original IRFL024NPBF footprint. Verify specific packaging options (Cut Tape, Tape & Reel, or Digi-Reel) with your supplier for procurement requirements.

Q: Do the substitute parts meet the same compliance standards as the IRFL024NPBF?

A: Yes. All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original device specifications. BUK7880-55A/CUX and BUK9880-55A/CUX additionally carry AEC-Q100 automotive qualification, providing enhanced reliability documentation for automotive and industrial applications.

Q: What is the impact of higher gate charge in the IRFL024NPBF compared to substitute parts?

A: The IRFL024NPBF exhibits gate charge of 18.3 nC at 10V, while substitute parts range from 9 nC to 13 nC. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications. If the original circuit design accommodates the higher gate charge, substitute parts with lower values will enhance overall system performance without requiring circuit modifications.

Q: Can STN3NF06L replace IRFL024NPBF in a 55V application?

A: Yes. The STN3NF06L is rated for 60V operation, which exceeds the 55V requirement. The device is electrically compatible with 55V circuit designs and provides improved switching characteristics through lower gate threshold voltage (2.8V vs. 4V) and reduced gate charge (9 nC vs. 18.3 nC). Thermal management must accommodate the 3.3W power dissipation rating.

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