IRFL014PBF N-Channel 60V 2.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFL014PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 2.7A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. Equivalent parts maintain identical or superior electrical performance within the specified parameter ranges, while substitute parts provide functional alternatives with minor parameter variations acceptable for the intended application class.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	2.7	A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.6A, 10V	—
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11	nC @ 10V
Power Dissipation (Max)	2	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	SOT-223 (TO-261-4, TO-261AA)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRFL014PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 60V required
Continuous Drain Current (Id): Minimum 2.7A at 25°C
On-State Resistance (Rds On): Maximum 200 mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Maximum 4V at 250µA
Package Type: SOT-223 surface mount configuration
Temperature Range: Minimum -55°C to 150°C junction temperature
Compliance: ROHS3 compliant, MSL 1 rating

Grouping Logic:

Group 1 – Direct Equivalents (Identical Electrical Performance): Parts meeting or exceeding all primary parameters with matching or superior power dissipation ratings and gate charge specifications. These parts are pin-compatible and electrically interchangeable without circuit modification.

Group 2 – Functional Substitutes (Minor Parameter Variations): Parts with Vdss ≥ 60V and Id ≥ 2.7A but with variations in Rds On, gate charge, or power dissipation within acceptable engineering tolerances. These require verification of application-specific thermal and switching requirements.

Group 3 – Enhanced Performance Alternatives (Superior Current Rating): Parts with Id > 2.7A and Vdss ≥ 60V, offering improved current handling and reduced on-state resistance. These provide design margin for current-limited applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Status
IRFL014PBF	Vishay Siliconix	60	2.7 (Tc)	200 @ 1.6A, 10V	4 @ 250µA	11 @ 10V	2 (Ta)	-55 to 150	Obsolete
IRFL014NTRPBF	Infineon Technologies	55	1.9 (Ta)	160 @ 1.9A, 10V	4 @ 250µA	11 @ 10V	1 (Ta)	-55 to 150	Active
NDT014	onsemi	60	2.7 (Ta)	200 @ 1.6A, 10V	4 @ 250µA	11 @ 10V	3 (Ta)	-65 to 150	Active
NDT014L	onsemi	60	2.8 (Ta)	160 @ 3.4A, 10V	3 @ 250µA	5 @ 4.5V	3 (Ta)	-65 to 150	Active
NDT3055L	onsemi	60	4 (Ta)	100 @ 4A, 10V	2 @ 250µA	20 @ 10V	3 (Ta)	-65 to 150	Active
NTF3055L108T1G	onsemi	60	3 (Ta)	120 @ 1.5A, 5V	2 @ 250µA	15 @ 5V	1.3 (Ta)	-55 to 175	Active
STN3NF06L	STMicroelectronics	60	4 (Tc)	100 @ 1.5A, 10V	2.8 @ 250µA	9 @ 5V	3.3 (Tc)	-55 to 150	Active
ZXMN6A11GTA	Diodes Incorporated	60	3.1 (Ta)	120 @ 2.5A, 10V	3 @ 250µA	5.7 @ 10V	2 (Ta)	-55 to 150	Active

Engineering Selection Recommendations

Primary Recommendation – Direct Equivalent:

The NDT014 (onsemi) is the primary direct equivalent to the IRFL014PBF. It maintains identical Vdss (60V), Id (2.7A), Rds On (200 mOhm @ 1.6A, 10V), Vgs(th) (4V @ 250µA), and gate charge (11 nC @ 10V) specifications. The NDT014 is ROHS3 compliant, MSL 1 rated, and carries active product status with 40,800 pieces in stock. Extended temperature range (-65°C to 150°C) provides additional design margin. Pin-compatible SOT-223-4 packaging enables direct board-level substitution without circuit modification.

Secondary Recommendation – Enhanced Performance Alternative:

The NDT014L (onsemi) provides improved electrical performance with 2.8A continuous drain current, reduced Rds On (160 mOhm @ 3.4A, 10V), and lower gate threshold voltage (3V @ 250µA). Gate charge is reduced to 5 nC @ 4.5V, enabling faster switching characteristics. This part is suitable for applications requiring improved thermal performance or higher current margins. Active status, ROHS3 compliance, and 40,900 pieces in stock support production deployment.

Tertiary Recommendation – High Current Alternative:

The NDT3055L (onsemi) and STN3NF06L (STMicroelectronics) offer 4A continuous drain current with significantly reduced on-state resistance (100 mOhm @ 4A, 10V). These parts are appropriate for applications where the original 2.7A rating provides insufficient margin or where thermal dissipation is critical. Both maintain 60V Vdss rating, ROHS3 compliance, and MSL 1 moisture sensitivity. STN3NF06L includes STripFET™ II technology designation and higher power dissipation rating (3.3W Tc).

Not Recommended:

The IRFL014NTRPBF (Infineon Technologies) exhibits reduced Vdss (55V) and Id (1.9A), falling below the minimum 60V and 2.7A requirements of the original specification. This part is unsuitable for direct substitution in applications requiring full 60V voltage rating or 2.7A current capacity.

All recommended substitutes maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and surface mount SOT-223 packaging. Selection should be based on thermal budget, switching frequency requirements, and available inventory.

Frequently Asked Questions (FAQ)

Q: Can the IRFL014NTRPBF replace the IRFL014PBF?

A: No. The IRFL014NTRPBF has a reduced Vdss rating of 55V compared to the required 60V, and reduced continuous drain current of 1.9A versus the required 2.7A. This part does not meet the minimum electrical specifications and is not suitable for direct substitution.

Q: What is the difference between the NDT014 and NDT014L?

A: Both parts maintain 60V Vdss and meet or exceed 2.7A continuous drain current. The NDT014L offers improved performance with 2.8A rating, reduced on-state resistance (160 mOhm vs. 200 mOhm), lower gate threshold voltage (3V vs. 4V), and significantly reduced gate charge (5 nC vs. 11 nC). The NDT014L is preferred for applications requiring faster switching or improved thermal characteristics.

Q: Are all substitute parts pin-compatible with the IRFL014PBF?

A: Yes. All recommended substitute parts use the SOT-223 surface mount package with TO-261-4 and TO-261AA case designations, providing mechanical and electrical pin compatibility. No PCB layout modifications are required for direct substitution.

Q: What is the significance of the temperature range difference between parts?

A: The IRFL014PBF specifies -55°C to 150°C junction temperature range. The NDT014 and NDT014L extend this to -65°C to 150°C, providing 10°C additional margin at the lower temperature extreme. The NTF3055L108T1G extends the upper limit to 175°C, suitable for high-temperature applications. Selection depends on the specific operating environment and thermal requirements.

Q: How do I determine which substitute part is appropriate for my application?

A: Evaluate the following criteria in order: (1) Verify Vdss ≥ 60V and Id ≥ 2.7A; (2) Confirm Rds On does not exceed 200 mOhm at the specified gate voltage; (3) Assess thermal dissipation requirements against the power rating; (4) Verify operating temperature range encompasses your application limits; (5) Confirm ROHS3 compliance and MSL 1 rating for your supply chain requirements. The NDT014 provides the most direct replacement. Use NDT014L or higher-current alternatives only if application-specific requirements justify the parameter variations.

Q: What does MSL 1 (Unlimited) moisture sensitivity mean?

A: MSL 1 indicates the component has unlimited shelf life and requires no special moisture control during storage or handling. All recommended substitute parts carry this rating, matching the original IRFL014PBF specification and eliminating moisture-related procurement constraints.

Q: Are there any switching frequency considerations when selecting a substitute?

A: Yes. Gate charge (Qg) directly affects switching speed and power dissipation in switching applications. The IRFL014PBF specifies 11 nC @ 10V. The NDT014L and ZXMN6A11GTA offer reduced gate charge (5 nC and 5.7 nC respectively), enabling faster switching transitions and lower switching losses. For low-frequency applications (< 100 kHz), gate charge differences are negligible. For high-frequency switching (> 1 MHz), reduced gate charge variants are preferred.

Q: What is the difference between Ta and Tc power dissipation ratings?

A: Ta denotes power dissipation at ambient temperature (typically 25°C in still air), while Tc denotes power dissipation at case temperature with thermal management. The IRFL014PBF specifies 2W (Ta) and 3.1W (Tc). Most substitute parts specify Ta ratings. Verify thermal management requirements against the specific rating used in your application's thermal analysis.

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