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IRFIZ48VPBF N-Channel MOSFET 60V 39A Equivalent & Substitute Parts
Part Overview
The IRFIZ48VPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for through-hole applications in the TO-220AB Full-Pak package. This device operates at 60V drain-to-source voltage with a continuous drain current rating of 39A at 25°C and maximum power dissipation of 43W. The product is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling capacity, thermal characteristics, and mechanical packaging to ensure direct replacement capability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 39 | A (Tc) |
| On-State Drain Resistance (Rds On Max) @ Id, Vgs | 12 | mOhm @ 43A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 110 | nC @ 10V |
| Maximum Gate Voltage (Vgs Max) | ±20 | V |
| Input Capacitance (Ciss Max) @ Vds | 1985 | pF @ 25V |
| Power Dissipation (Max) | 43 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-220-3 Full Pack | Through Hole |
| Moisture Sensitivity Level | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitution of the IRFIZ48VPBF is determined by strict electrical and mechanical parameter alignment. The primary substitute identified is the PSMN015-60PS,127 manufactured by Nexperia USA Inc.
Substitution Criteria:
The PSMN015-60PS,127 qualifies as a substitute based on the following parameter alignment:
- Drain-to-Source Voltage (Vdss): Both devices rated at 60V, ensuring voltage compatibility in circuit applications
- Package Type: Both use TO-220AB through-hole mounting, providing mechanical and thermal interface compatibility
- Gate Voltage Range (Vgs Max): Both rated at ±20V, ensuring gate drive circuit compatibility
- Operating Temperature Range: Both operate across -55°C to 175°C (TJ), maintaining thermal performance envelope
- Technology: Both are Metal Oxide Semiconductor (MOSFET) N-Channel devices with identical switching characteristics
Parameter Differences Permitting Substitution:
The PSMN015-60PS,127 exhibits higher continuous drain current (50A vs. 39A) and greater power dissipation capability (86W vs. 43W), representing an uprated substitute. The on-state resistance (Rds On) is 14.8 mOhm at 15A, 10V versus 12 mOhm at 43A, 10V for the IRFIZ48VPBF. Gate charge is lower (20.9 nC vs. 110 nC), and input capacitance is reduced (1220 pF vs. 1985 pF), providing improved switching performance characteristics.
Parameter Comparison
| Parameter | IRFIZ48VPBF (Main Part) | PSMN015-60PS,127 (Substitute) | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Nexperia USA Inc. | — |
| Drain to Source Voltage (Vdss) | 60 | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 39 | 50 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 12 @ 43A, 10V | 14.8 @ 15A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 @ 250µA | 4 @ 1mA | V |
| Gate Charge (Qg Max) @ Vgs | 110 @ 10V | 20.9 @ 10V | nC |
| Maximum Gate Voltage (Vgs Max) | ±20 | ±20 | V |
| Input Capacitance (Ciss Max) @ Vds | 1985 @ 25V | 1220 @ 30V | pF |
| Power Dissipation (Max) | 43 | 86 | W (Tc) |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Package Type | TO-220-3 Full Pack | TO-220-3 | Through Hole |
| Moisture Sensitivity Level | 1 (Unlimited) | 1 (Unlimited) | — |
| Product Status | Obsolete | Obsolete | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
Primary Substitute: PSMN015-60PS,127
The PSMN015-60PS,127 is the qualified substitute for the IRFIZ48VPBF based on electrical parameter compatibility and mechanical packaging equivalence. Both devices are classified as obsolete products, indicating end-of-life status from their respective manufacturers. The substitute maintains identical voltage ratings (60V Vdss) and gate voltage specifications (±20V Vgs Max), ensuring direct compatibility with existing gate drive and power supply circuits.
The PSMN015-60PS,127 provides enhanced performance characteristics through higher continuous drain current (50A vs. 39A) and increased power dissipation capability (86W vs. 43W). These uprated specifications ensure the substitute can handle equivalent or higher current loads without thermal derating. The reduced gate charge (20.9 nC vs. 110 nC) and lower input capacitance (1220 pF vs. 1985 pF) result in faster switching transitions and reduced gate drive power requirements.
Both devices maintain identical operating temperature ranges (-55°C to 175°C TJ) and moisture sensitivity levels (MSL 1, Unlimited), confirming environmental and storage compatibility. REACH compliance status is identical for both parts (REACH Unaffected), supporting regulatory continuity in applications subject to chemical substance restrictions.
The TO-220AB through-hole package is mechanically identical between both devices, permitting direct PCB footprint compatibility without layout modifications. Thermal interface characteristics remain consistent, allowing existing heatsink and thermal management designs to function without redesign.
Frequently Asked Questions (FAQ)
Q: Can the PSMN015-60PS,127 directly replace the IRFIZ48VPBF in existing designs?
A: Yes. Both devices share identical drain-to-source voltage (60V), gate voltage range (±20V), operating temperature range (-55°C to 175°C), and TO-220AB package configuration. The substitute provides equal or superior electrical performance with no circuit modifications required.
Q: What are the key electrical differences between these two MOSFETs?
A: The PSMN015-60PS,127 offers higher continuous drain current (50A vs. 39A) and greater power dissipation (86W vs. 43W). Gate charge is significantly lower (20.9 nC vs. 110 nC), and input capacitance is reduced (1220 pF vs. 1985 pF). These differences represent performance improvements rather than incompatibilities.
Q: Are there thermal management considerations when substituting these parts?
A: The PSMN015-60PS,127 has double the power dissipation rating (86W vs. 43W), allowing operation at higher current levels or reduced heatsink requirements. Existing thermal designs for the IRFIZ48VPBF will remain valid for the substitute, with potential for improved thermal margin.
Q: Do both parts have identical gate drive requirements?
A: Yes. Both devices specify ±20V maximum gate voltage and 4V gate threshold voltage, ensuring compatibility with existing gate drive circuits. The lower gate charge of the substitute (20.9 nC vs. 110 nC) may reduce gate drive power consumption but does not require circuit changes.
Q: What is the significance of the reduced gate charge in the PSMN015-60PS,127?
A: Lower gate charge (20.9 nC vs. 110 nC) results in faster switching transitions, reduced gate drive power dissipation, and improved high-frequency performance. This represents a performance advantage with no negative impact on circuit compatibility.
Q: Are moisture sensitivity and storage requirements identical?
A: Yes. Both devices are rated MSL 1 (Unlimited moisture sensitivity level), indicating no moisture-related storage restrictions. Handling and storage procedures are identical for both parts.
Q: What is the regulatory compliance status for both devices?
A: Both the IRFIZ48VPBF and PSMN015-60PS,127 are REACH Unaffected, confirming compliance with EU chemical substance regulations. No additional regulatory documentation is required for substitution.
Q: Can the PSMN015-60PS,127 be used in applications requiring the exact specifications of the IRFIZ48VPBF?
A: Yes. The substitute meets or exceeds all critical electrical specifications of the original part. The higher current and power ratings of the substitute ensure compatibility with applications designed for the IRFIZ48VPBF.
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