IRFIBF30G N-Channel 900V 1.9A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFIBF30G is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 900V drain-to-source voltage with 1.9A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and dissipates a maximum of 35W. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFIBF30G serves in high-voltage switching applications where N-Channel MOSFET functionality is required within the 900V voltage class. Due to its obsolete status, alternative parts with equivalent or superior electrical characteristics are required to maintain design continuity and ensure component availability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	1.9	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3.7 @ 1.1A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	4 @ 250µA	V
Gate Charge (Qg) @ Vgs	78 @ 10V	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	1200 @ 25V	pF
Power Dissipation (Max)	35	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFIBF30G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 900V
Continuous Drain Current (Id): Must equal or exceed 1.9A at 25°C
Gate Drive Voltage: Must support 10V operation
Mounting Type: Must be through-hole compatible
Package Form Factor: Must be TO-220-3 or compatible TO-220 variant

Secondary Compatibility Factors:

Operating temperature range must encompass -55°C to 150°C
Rds On characteristics must be suitable for the application's switching requirements
Gate charge and input capacitance affect switching speed and driver requirements

Substitute parts are grouped into two categories:

Category 1: Direct Parametric Equivalents — Parts with identical or near-identical electrical specifications and the same base product lineage (IRFIBF30GPBF).

Category 2: Functional Substitutes — Parts from alternative manufacturers (Toshiba, onsemi, IXYS, STMicroelectronics) that meet or exceed the minimum electrical requirements while maintaining TO-220-3 package compatibility and through-hole mounting.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (Ohm)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Power Diss. (W)	Package	Status
IRFIBF30G	Vishay Siliconix	900	1.9	3.7	78	1200	35	TO-220-3	Obsolete
IRFIBF30GPBF	Vishay Siliconix	900	1.9	3.7	78	1200	35	TO-220-3	Active
2SK3564(STA4,Q,M)	Toshiba	900	3.0	4.3	17	700	40	TO-220SIS	Active
2SK3798(STA4,Q,M)	Toshiba	900	4.0	3.5	26	800	40	TO-220SIS	Active
BFL4026-1E	onsemi	900	3.5	3.6	33	650	35	TO-220F-3FS	Obsolete
FQPF4N90C	onsemi	900	4.0	4.2	22	960	47	TO-220F-3	Active
IXFP4N100Q	IXYS	1000	4.0	3.0	39	1050	150	TO-220-3	Not For New Designs
STF5N95K3	STMicroelectronics	950	4.0	3.5	19	460	25	TO-220FP	Active
STF5NK100Z	STMicroelectronics	1000	3.5	3.7	59	1154	30	TO-220FP	Active
STP3NK90ZFP	STMicroelectronics	900	3.0	4.8	22.7	590	25	TO-220FP	Active
STP6NK90ZFP	STMicroelectronics	900	5.8	2.0	60.5	1350	30	TO-220FP	Active

Engineering Selection Recommendations

Recommended Primary Substitute: IRFIBF30GPBF

The IRFIBF30GPBF is the direct equivalent of the IRFIBF30G, manufactured by Vishay Siliconix with identical electrical specifications. This part maintains 900V Vdss, 1.9A continuous drain current, and 35W power dissipation. The IRFIBF30GPBF is currently in active production status and is RoHS3 compliant, addressing regulatory requirements that the original IRFIBF30G does not meet. Packaging is supplied in tube format. This is the preferred substitute for direct replacement in existing designs.

Recommended Secondary Substitutes (Active Status, RoHS3 Compliant):

STMicroelectronics SuperMESH™ Series:

STP6NK90ZFP: Exceeds IRFIBF30G specifications with 5.8A continuous drain current and 2.0Ohm Rds On at 10V. Suitable for applications requiring higher current capacity or lower on-resistance. Active product status.
STF5N95K3: Rated for 950V Vdss with 4.0A continuous drain current and 3.5Ohm Rds On. Provides enhanced performance margin above the 900V requirement. Active product status.
STP3NK90ZFP: Matches 900V Vdss with 3.0A continuous drain current. Suitable for applications where current requirements are moderate. Active product status.
STF5NK100Z: Rated for 1000V Vdss with 3.5A continuous drain current. Provides maximum voltage margin for high-voltage applications. Active product status.

Toshiba π-MOSIV Series:

2SK3564(STA4,Q,M): Rated for 900V Vdss with 3.0A continuous drain current. Active product status with RoHS3 compliance.
2SK3798(STA4,Q,M): Rated for 900V Vdss with 4.0A continuous drain current and 3.5Ohm Rds On. Active product status with RoHS3 compliance.

onsemi QFET® Series:

FQPF4N90C: Rated for 900V Vdss with 4.0A continuous drain current and 47W power dissipation. Active product status with RoHS3 compliance.

Not Recommended for New Designs:

IXFP4N100Q: Marked as "Not For New Designs" by manufacturer. While electrically capable, this status indicates limited future support and availability.
BFL4026-1E: Obsolete status limits long-term availability and support.

All recommended active substitutes maintain through-hole mounting and TO-220 package compatibility. Selection among active alternatives depends on specific application requirements for current capacity, on-resistance, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can IRFIBF30GPBF be used as a direct replacement for IRFIBF30G?

A: Yes. IRFIBF30GPBF is the direct parametric equivalent with identical electrical specifications: 900V Vdss, 1.9A continuous drain current, 3.7Ohm Rds On at 10V, and 35W power dissipation. The primary difference is product status (active vs. obsolete) and RoHS3 compliance. Pinout and TO-220-3 package are identical.

Q: What is the minimum drain current requirement for a substitute part?

A: The substitute must support at least 1.9A continuous drain current at 25°C to meet the IRFIBF30G specification. All listed substitutes meet or exceed this requirement.

Q: Are TO-220SIS and TO-220FP packages compatible with TO-220-3?

A: TO-220SIS and TO-220FP are variants of the TO-220 package family with identical pin configurations and through-hole mounting. They are mechanically and electrically compatible with TO-220-3 applications. Verify specific PCB footprint requirements for your design.

Q: What is the significance of the 900V Vdss rating?

A: The 900V Vdss rating specifies the maximum drain-to-source voltage the MOSFET can withstand in the off-state. Substitute parts must equal or exceed 900V to ensure safe operation in the same circuit. Parts rated at 950V or 1000V provide additional voltage margin and are acceptable substitutes.

Q: How does Rds On affect substitute selection?

A: Rds On (on-resistance) determines conduction losses and heat dissipation during switching. Lower Rds On values reduce power loss. The IRFIBF30G specifies 3.7Ohm at 1.1A and 10V. Substitutes with equal or lower Rds On values improve efficiency. Higher Rds On values increase thermal load and may require design verification.

Q: Why is RoHS3 compliance important?

A: RoHS3 compliance indicates the part meets current environmental and regulatory standards for hazardous substance restrictions. The original IRFIBF30G is RoHS non-compliant. Active substitutes with RoHS3 compliance ensure compatibility with modern procurement and environmental regulations.

Q: Can I use a substitute with higher continuous drain current?

A: Yes. Substitutes with higher continuous drain current (e.g., 3.0A, 4.0A, or 5.8A) are acceptable and provide design margin. Higher current ratings do not negatively affect applications designed for lower currents. Verify that gate drive circuitry and thermal management remain adequate.

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds. The IRFIBF30G specifies 78nC at 10V. Substitutes with lower Qg (e.g., 17nC to 60.5nC) may improve switching performance but require verification that gate driver circuits are compatible.

Q: Are all listed substitutes available in the same packaging format?

A: No. While all substitutes use TO-220 package variants (TO-220-3, TO-220SIS, TO-220FP, TO-220F-3FS), the specific packaging format and tape/tube options vary. Verify packaging availability with your supplier for procurement requirements.

Q: What is the operating temperature range requirement?

A: The IRFIBF30G operates from -55°C to 150°C junction temperature. All listed substitutes support this full temperature range, ensuring thermal compatibility across industrial and extended temperature applications.

Q: Should I select a substitute based on lowest Rds On?

A: Not necessarily. While lower Rds On reduces conduction losses, other factors including gate charge, input capacitance, power dissipation rating, and thermal characteristics must align with your circuit design. Select the substitute that best matches your application's switching frequency, current profile, and thermal budget.

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