IRFIBF20G N-Channel 900V 1.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFIBF20G is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 900V drain-to-source voltage with 1.2A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is rated for 30W maximum power dissipation. The IRFIBF20G is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	1.2	A (Tc)
On-State Resistance (Rds On) @ 720mA, 10V	8	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	30	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IRFIBF20G is determined by the following critical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 900V minimum
Mounting Type: Through Hole
Package Type: TO-220 family

Performance Parameters (Application-Dependent):

Continuous Drain Current (Id): Minimum 1.2A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Power Dissipation: Minimum 30W at Tc
Operating Temperature Range: -55°C to 150°C (TJ)

Substitute parts are grouped into two categories:

Category 1: Direct Parametric Equivalents Parts that match or exceed all critical parameters with identical or compatible package configurations.

Category 2: Enhanced Performance Substitutes Parts that exceed the original specifications in voltage rating, current capacity, or power dissipation while maintaining electrical compatibility and through-hole mounting.

Parameter Comparison

Parameter	IRFIBF20G	IRFIBF20GPBF	2SK3566(STA4,Q,M)	IXFP4N100Q	IXTP2N100	STP3NK90ZFP
Manufacturer	Vishay Siliconix	Vishay Siliconix	Toshiba Semiconductor	IXYS	IXYS	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	900	900	900	1000	1000	900
Id @ 25°C (A)	1.2 (Tc)	1.2 (Tc)	2.5 (Ta)	4 (Tc)	2 (Tc)	3 (Tc)
Rds On @ 10V (Ohm)	8 @ 720mA	8 @ 720mA	6.4 @ 1.5A	3 @ 2A	7 @ 1A	4.8 @ 1.5A
Vgs(th) @ Specified Id (V)	4 @ 250µA	4 @ 250µA	4 @ 1mA	5 @ 1.5mA	4.5 @ 250µA	4.5 @ 50µA
Gate Charge Qg @ 10V (nC)	38	38	12	39	40	22.7
Power Dissipation Max (W)	30 (Tc)	30 (Tc)	40 (Tc)	150 (Tc)	100 (Tc)	25 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220SIS	TO-220-3	TO-220-3	TO-220FP
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFIBF20GPBF (Vishay Siliconix)

This part is the direct parametric equivalent to the IRFIBF20G with identical electrical specifications. The primary distinction is product status: IRFIBF20GPBF is active and ROHS3 compliant, whereas the original IRFIBF20G is obsolete and non-compliant. IRFIBF20GPBF is packaged in tube format and maintains the same TO-220-3 configuration. This substitute is suitable for direct replacement in existing designs requiring regulatory compliance.

2SK3566(STA4,Q,M) (Toshiba Semiconductor)

This part meets the 900V voltage requirement and exceeds the current rating at 2.5A continuous drain current. The on-state resistance is lower at 6.4 Ohm, indicating improved efficiency. Power dissipation is rated at 40W, exceeding the original 30W specification. The package is TO-220SIS, which is mechanically compatible with TO-220-3 applications. This part is active and RoHS compliant. Selection is appropriate for applications requiring enhanced current handling or improved thermal performance.

IXTP2N100 (IXYS)

This part exceeds the voltage rating at 1000V and provides 2A continuous drain current, surpassing the original 1.2A specification. On-state resistance is 7 Ohm at 1A, comparable to the original device. Power dissipation is rated at 100W, significantly exceeding the 30W requirement. The TO-220-3 package is identical to the original. This part is active and ROHS3 compliant. Selection is appropriate for applications requiring higher voltage margin or increased power handling capability.

STP3NK90ZFP (STMicroelectronics)

This part maintains the 900V voltage rating and provides 3A continuous drain current, exceeding the original 1.2A specification. On-state resistance is 4.8 Ohm at 1.5A, indicating superior switching performance. The TO-220FP package is mechanically compatible with TO-220-3 applications. This part is active and ROHS3 compliant. Selection is appropriate for applications requiring improved current capacity while maintaining the original voltage specification.

IXFP4N100Q (IXYS)

This part exceeds the voltage rating at 1000V and provides 4A continuous drain current. On-state resistance is 3 Ohm at 2A, indicating excellent switching efficiency. Power dissipation is rated at 150W, substantially exceeding the original specification. The TO-220-3 package is identical. However, this part is classified as "Not For New Designs," limiting its suitability for new development. Selection is appropriate only for legacy system maintenance or where existing inventory is available.

Frequently Asked Questions (FAQ)

Q: Can IRFIBF20GPBF be used as a direct replacement for IRFIBF20G?

A: Yes. IRFIBF20GPBF is a direct parametric equivalent with identical electrical specifications: 900V Vdss, 1.2A continuous drain current, 8 Ohm Rds On, and 30W power dissipation. The primary differences are product status (active versus obsolete) and RoHS compliance (ROHS3 compliant versus non-compliant). Both use TO-220-3 packaging. Electrical performance and pin configuration are identical.

Q: What is the difference between TO-220-3 and TO-220SIS packaging?

A: Both are through-hole packages with three leads suitable for N-Channel MOSFETs. TO-220-3 is the standard configuration with a flat isolated tab. TO-220SIS is a variant with similar electrical and mechanical compatibility. Mounting hole spacing and lead positioning are compatible for most applications, though mechanical fit should be verified for specific PCB layouts.

Q: Can I use IXTP2N100 or IXFP4N100Q in place of IRFIBF20G?

A: Yes, with design considerations. Both parts exceed the original voltage rating (1000V versus 900V) and current capacity (2A and 4A respectively versus 1.2A). This provides additional design margin for voltage transients and current surges. However, higher current ratings and power dissipation capabilities do not require circuit modification if the original design operates within the IRFIBF20G specifications. Verify that the higher input capacitance (825 pF and 1050 pF respectively versus 490 pF) does not affect gate drive circuit performance.

Q: Why is IXFP4N100Q marked "Not For New Designs"?

A: This designation indicates the manufacturer has discontinued active development and support for this part. While existing inventory may be available, the part is not recommended for new circuit designs. For new development, select from parts with "Active" status: IRFIBF20GPBF, 2SK3566(STA4,Q,M), IXTP2N100, or STP3NK90ZFP.

Q: What is the significance of RoHS compliance status?

A: RoHS (Restriction of Hazardous Substances) compliance is a regulatory requirement in many markets. IRFIBF20G is non-compliant, while IRFIBF20GPBF, 2SK3566(STA4,Q,M), IXTP2N100, and STP3NK90ZFP are all compliant. For applications subject to RoHS regulations or customer requirements, select a compliant substitute.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original IRFIBF20G requires 38 nC at 10V. Substitutes range from 12 nC (2SK3566) to 40 nC (IXTP2N100). Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge requires more gate drive energy but does not prevent substitution if the gate drive circuit has adequate current capacity. Verify gate drive circuit specifications for the selected substitute.

Q: Can I use STP3NK90ZFP if my application requires exactly 30W power dissipation?

A: STP3NK90ZFP is rated for 25W maximum power dissipation at Tc, which is lower than the original 30W specification. If your application requires the full 30W dissipation capability, this part is not suitable. Select IRFIBF20GPBF (30W), 2SK3566 (40W), IXTP2N100 (100W), or IXFP4N100Q (150W) instead.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use through-hole TO-220 family packaging (TO-220-3, TO-220SIS, or TO-220FP), which are mechanically compatible for most PCB layouts. However, specific mounting hole spacing and tab isolation characteristics may vary. Verify mechanical compatibility with your PCB design before final part selection.

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