IRFIB5N50LPBF N-Channel 500V 4.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFIB5N50LPBF is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage and 4.7A continuous drain current. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The part is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	4.7	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	800	mOhm @ 2.4A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	45	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	1000	pF @ 25V
Power Dissipation (Max)	42	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole
Package	TO-220-3
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRFIB5N50LPBF is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 500V minimum
N-Channel FET topology
Through-hole mounting configuration
TO-220 package family (TO-220-3, TO-220F-3, TO-220SIS acceptable)
Operating temperature range: -55°C to 150°C minimum
RoHS3 compliance

Performance Equivalence Criteria:

Continuous drain current (Id): 4.7A or greater
On-state resistance (Rds On): 800mOhm or lower at rated conditions
Gate threshold voltage (Vgs(th)): 5V or lower
Power dissipation capability: 42W or greater
Gate charge (Qg): 45nC or lower

Substitute parts are grouped into two categories based on package variant: TO-220F-3 (onsemi UniFET™ and STMicroelectronics MDmesh™ II series) and TO-220SIS (Toshiba π-MOSVII series). All substitute parts meet or exceed the electrical specifications of the main part while maintaining functional compatibility in high-voltage switching applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Ciss Max (pF)	Power Diss (W)	Package	Status
IRFIB5N50LPBF	Vishay Siliconix	500	4.7	800 @ 2.4A, 10V	5 @ 250µA	45 @ 10V	1000 @ 25V	42	TO-220-3	Obsolete
FDPF12N50T	onsemi	500	11.5	650 @ 6A, 10V	5 @ 250µA	30 @ 10V	1315 @ 25V	42	TO-220F-3	Obsolete
FDPF8N50NZ	onsemi	500	8	850 @ 4A, 10V	5 @ 250µA	18 @ 10V	735 @ 25V	40.3	TO-220F-3	Obsolete
STF8NM50N	STMicroelectronics	500	5	790 @ 2.5A, 10V	4 @ 250µA	14 @ 10V	364 @ 50V	20	TO-220FP	Active
STP9NK50ZFP	STMicroelectronics	500	7.2	850 @ 3.6A, 10V	4.5 @ 100µA	32 @ 10V	910 @ 25V	30	TO-220FP	Active
TK10A50D(STA4,Q,M)	Toshiba	500	10	720 @ 5A, 10V	4 @ 1mA	20 @ 10V	1050 @ 25V	45	TO-220SIS	Active
TK10A55D(STA4,Q,M)	Toshiba	550	10	720 @ 5A, 10V	4 @ 1mA	24 @ 10V	1200 @ 25V	45	TO-220SIS	Active
TK11A55D(STA4,Q,M)	Toshiba	550	11	630 @ 5.5A, 10V	4 @ 1mA	25 @ 10V	1350 @ 25V	45	TO-220SIS	Active
TK8A50D(STA4,Q,M)	Toshiba	500	8	850 @ 4A, 10V	4 @ 1mA	16 @ 10V	800 @ 25V	40	TO-220SIS	Active
TK9A55DA(STA4,Q,M)	Toshiba	550	8.5	860 @ 4.3A, 10V	4 @ 1mA	20 @ 10V	1050 @ 25V	40	TO-220SIS	Active

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The Toshiba π-MOSVII series devices (TK10A50D, TK10A55D, TK11A55D, TK8A50D, TK9A55DA) are recommended as primary substitutes. These parts are in active production status, ensuring long-term availability and supply chain stability. All Toshiba devices maintain 500V or 550V Vdss ratings, support continuous drain currents equal to or exceeding the original 4.7A specification, and are packaged in TO-220SIS through-hole configuration. These parts carry RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the environmental qualification of the original part.

Secondary Substitutes (Obsolete Status):

The onsemi UniFET™ series (FDPF12N50T, FDPF8N50NZ) and STMicroelectronics MDmesh™ II series (STF8NM50N, STP9NK50ZFP) provide functional equivalence with 500V Vdss ratings and drain currents meeting or exceeding 4.7A. These parts are classified as obsolete but remain available in inventory. The STMicroelectronics STP9NK50ZFP is listed as active and offers superior gate charge characteristics (32nC versus 45nC) with 7.2A continuous drain current capability.

Package Compatibility:

All substitute parts utilize through-hole mounting in TO-220 package variants (TO-220F-3, TO-220FP, TO-220SIS). These packages are mechanically and electrically compatible with TO-220-3 footprints in standard PCB designs. Pin configurations remain consistent across all variants.

Compliance and Certification:

All substitute parts maintain RoHS3 compliance and EAR99 export classification, matching the regulatory status of the original IRFIB5N50LPBF. Operating temperature ranges span -55°C to 150°C across all substitutes, ensuring thermal compatibility in equivalent application environments.

Frequently Asked Questions (FAQ)

Q: Can the FDPF12N50T directly replace the IRFIB5N50LPBF in existing designs?

A: The FDPF12N50T meets all critical electrical parameters for substitution: 500V Vdss, 11.5A continuous drain current (exceeding the 4.7A requirement), 650mOhm on-state resistance, and 42W power dissipation capability. The TO-220F-3 package is mechanically compatible with TO-220-3 footprints. However, the higher drain current rating and lower on-state resistance result in different thermal characteristics. Circuit performance remains functionally equivalent for switching applications within the original design specifications.

Q: What is the difference between TO-220-3, TO-220F-3, TO-220FP, and TO-220SIS packages?

A: All four package variants are through-hole mounted TO-220 family devices with identical pin configurations and electrical interfaces. TO-220-3 features an isolated tab, TO-220F-3 includes a full pack design, TO-220FP is a full pack variant with specific thermal characteristics, and TO-220SIS is a Toshiba-specific variant. These packages are mechanically interchangeable on standard PCB layouts designed for TO-220 footprints.

Q: Why are some substitute parts listed as obsolete?

A: The onsemi FDPF12N50T and FDPF8N50NZ, along with the STMicroelectronics STF8NM50N, are classified as obsolete by their respective manufacturers. However, these parts remain available in current inventory. The Toshiba π-MOSVII series and STMicroelectronics STP9NK50ZFP maintain active production status, providing superior long-term availability assurance.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the FET on and off. The original IRFIB5N50LPBF specifies 45nC at 10V. Substitute parts range from 14nC to 32nC, resulting in faster switching transitions and reduced gate drive power requirements. Lower gate charge values improve efficiency in high-frequency switching applications but do not affect DC operating characteristics or thermal performance at equivalent current levels.

Q: Are there thermal performance differences between substitute parts?

A: Power dissipation ratings vary across substitutes: the original part specifies 42W, while substitutes range from 20W to 45W. These ratings reflect maximum thermal capability under specified conditions. Actual thermal performance in circuit depends on junction temperature, ambient temperature, and thermal management design. Parts with higher power dissipation ratings (45W) provide additional thermal margin in demanding applications.

Q: Can I use a 550V rated device (TK10A55D, TK11A55D, TK9A55DA) in a 500V application?

A: Yes. Devices rated for 550V Vdss are fully compatible with 500V applications. The higher voltage rating provides additional design margin and does not degrade performance in lower-voltage circuits. All electrical characteristics remain equivalent or superior to the original 500V-rated part.

Q: What is the significance of RoHS3 compliance for this part?

A: RoHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All substitute parts maintain RoHS3 compliance, ensuring compatibility with environmental regulations and procurement standards applicable to the original IRFIB5N50LPBF.

Q: How do I verify electrical compatibility before implementing a substitute?

A: Verify that the substitute part meets or exceeds the following parameters from the original specification: Vdss (500V minimum), continuous drain current (4.7A minimum), on-state resistance (800mOhm maximum at rated conditions), gate threshold voltage (5V maximum), and operating temperature range (-55°C to 150°C). All listed substitute parts satisfy these criteria. Circuit simulation or bench testing under application-specific load conditions provides additional validation.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message