IRFI520N N-Channel MOSFET 100V 7.6A TO-220 Equivalent & Substitute Parts

Part Overview

The IRFI520N is an N-Channel MOSFET manufactured by Infineon Technologies, designed for general-purpose switching applications requiring 100V drain-source voltage capability and 7.6A continuous drain current. This device features the HEXFET® technology platform and is housed in a TO-220-3 through-hole package.

The IRFI520N is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRFI520N

Infineon TechnologiesIn Stock: 1592IRFI520N Datasheet

Current PartRFQ

FDPF680N10T

Fairchild SemiconductorIn Stock: 1649FDPF680N10T Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFI520N is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 100V
• FET Type: Must be N-Channel MOSFET
• Gate Threshold Voltage (Vgs th): Must be compatible with 4V specification
• Maximum Gate Voltage (Vgs Max): Must support ±20V operation
• Continuous Drain Current (Id): Must meet or exceed 7.6A at 25°C

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole required
• Package / Case: TO-220-3 Full Pack configuration
• Pin compatibility: Direct footprint compatibility

Performance Considerations:

• On-State Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values indicate faster switching capability
• Input Capacitance (Ciss): Affects gate drive requirements
• Power Dissipation: Must support thermal requirements of application
• Operating Temperature Range: Must encompass application operating conditions

The FDPF680N10T from Fairchild Semiconductor meets all electrical and mechanical substitution criteria for the IRFI520N.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRFI520N is classified as obsolete, while the FDPF680N10T is active product. For new designs and ongoing production support, the FDPF680N10T provides assured long-term availability and manufacturer support.

Compliance and Certification: Both devices carry ECCN classification EAR99. The IRFI520N is RoHS non-compliant, while compliance status for the FDPF680N10T is not specified in provided data. Verify RoHS and REACH compliance requirements against specific application and regional regulations before final selection.

Electrical Performance: The FDPF680N10T demonstrates superior electrical characteristics: 58% lower on-state resistance (68 mOhm vs. 200 mOhm), 32% lower gate charge (17 nC vs. 25 nC), and 58% higher continuous drain current rating (12A vs. 7.6A). These improvements result in reduced power dissipation and improved switching performance in equivalent applications.

Thermal Considerations: The FDPF680N10T maximum power dissipation is 24W compared to 30W for the IRFI520N. The IRFI520N supports higher maximum junction temperature (175°C vs. 150°C). Verify thermal design margins for applications operating near maximum temperature limits.

Direct Substitution: The FDPF680N10T is a direct mechanical and electrical substitute for the IRFI520N in TO-220-3 through-hole applications. Pin configuration and package footprint are identical. No circuit modifications are required for substitution.

Frequently Asked Questions (FAQ)

Q: Can the FDPF680N10T directly replace the IRFI520N without circuit modifications?

A: Yes. Both devices are N-Channel MOSFETs in TO-220-3 packages with identical pin configurations. Electrical parameters are compatible across all critical specifications including Vdss (100V), Vgs Max (±20V), and gate threshold voltage. No circuit changes are required.

Q: What are the key differences between these two devices?

A: The FDPF680N10T offers improved performance: lower on-state resistance (68 mOhm vs. 200 mOhm), lower gate charge (17 nC vs. 25 nC), and higher current rating (12A vs. 7.6A). The IRFI520N supports higher maximum junction temperature (175°C vs. 150°C). The FDPF680N10T is active product while the IRFI520N is obsolete.

Q: Are there any thermal design considerations when substituting?

A: The FDPF680N10T has lower maximum power dissipation (24W vs. 30W). Applications operating near thermal limits should verify that the lower power rating is acceptable. The reduced on-state resistance typically results in lower actual power dissipation during operation, which is beneficial for thermal management.

Q: What is the operating temperature range difference?

A: The IRFI520N operates from -55°C to 175°C junction temperature, while the FDPF680N10T operates from -55°C to 150°C. For applications requiring operation above 150°C junction temperature, the IRFI520N specification must be maintained or alternative devices evaluated.

Q: Are both devices RoHS compliant?

A: The IRFI520N is explicitly RoHS non-compliant. RoHS compliance status for the FDPF680N10T is not specified in the provided technical data. Verify compliance requirements with the manufacturer or authorized distributor before final component selection for regulated applications.

Q: What is the significance of the different input capacitance values?

A: The FDPF680N10T has higher input capacitance (1000 pF vs. 330 pF at different measurement voltages). Higher input capacitance requires greater gate drive current for equivalent switching speed. Verify gate driver capability is sufficient for the substitute device in high-frequency switching applications.

Q: Can I use the IRFI520N as a substitute for the FDPF680N10T?

A: No. The IRFI520N has lower current rating (7.6A vs. 12A) and higher on-state resistance (200 mOhm vs. 68 mOhm). Applications designed for the FDPF680N10T may exceed the IRFI520N current or power dissipation limits. Substitution in the reverse direction is not recommended.