IRFHM9331TR2PBF P-Channel MOSFET 30V 11A Equivalent & Substitute Parts

Part Overview

The IRFHM9331TR2PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C (Ta) and 24A at case temperature (Tc). This device is packaged in a 3x3 PQFN (8-PowerTDFN) surface mount configuration with a gate charge of 48 nC and on-resistance of 10 mOhm at 11A, 20V.

The IRFHM9331TR2PBF is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this P-Channel MOSFET topology.

Substiute Parts

IRFHM9331TR2PBF

Infineon TechnologiesIn Stock: 1241IRFHM9331TR2PBF Datasheet

Current PartRFQ

SI7121ADN-T1-GE3

Vishay SiliconixIn Stock: 7067SI7121ADN-T1-GE3 Datasheet

MFR RecommendedRFQ

SI7617DN-T1-GE3

Vishay SiliconixIn Stock: 45930SI7617DN-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFHM9331TR2PBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel topology required
• Drain to Source Voltage (Vdss): Minimum 30V rating
• Continuous Drain Current (Id): Minimum 11A at Ta or equivalent thermal performance
• On-Resistance (Rds On): Maximum 15 mOhm to maintain thermal and efficiency characteristics
• Gate Threshold Voltage (Vgs(th)): Range 2.4V to 2.5V for gate drive compatibility
• Gate Charge (Qg): Maximum 60 nC to preserve switching characteristics
• Input Capacitance (Ciss): Maximum 1900 pF for gate drive circuit compatibility

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package Configuration: PQFN or equivalent PowerPAK footprint acceptable
• Moisture Sensitivity Level: MSL 1 (Unlimited) required

The substitute parts SI7121ADN-T1-GE3 and SI7617DN-T1-GE3 satisfy these criteria through equivalent or superior electrical ratings and compatible surface mount packaging.

Parameter Comparison

Engineering Selection Recommendations

SI7121ADN-T1-GE3 (Vishay Siliconix TrenchFET®)

The SI7121ADN-T1-GE3 is an active product with ROHS3 compliance and REACH unaffected status. It provides 12A continuous drain current at Ta, exceeding the IRFHM9331TR2PBF minimum requirement of 11A. Gate charge of 50 nC and input capacitance of 1870 pF remain within acceptable switching performance parameters. On-resistance of 15 mOhm at 7A, 10V is compatible with the original specification. This substitute is suitable for applications where current requirements do not exceed 12A at ambient temperature.

SI7617DN-T1-GE3 (Vishay Siliconix TrenchFET®)

The SI7617DN-T1-GE3 is an active product with ROHS3 compliance and REACH unaffected status. It provides 35A continuous drain current at Tc, substantially exceeding the IRFHM9331TR2PBF rating of 24A at Tc. On-resistance of 12.3 mOhm at 13.9A, 10V is superior to the original specification. Gate charge of 59 nC and input capacitance of 1800 pF remain within acceptable parameters. This substitute is suitable for applications requiring higher current capacity or improved thermal performance.

Both substitute parts are manufactured by Vishay Siliconix, classified as active products, and maintain compliance with ROHS3 and REACH requirements. Package footprints differ from the original PQFN configuration; PCB layout modification is required for implementation.

Frequently Asked Questions (FAQ)

Q: Can SI7121ADN-T1-GE3 or SI7617DN-T1-GE3 be used as direct pin-for-pin replacements for IRFHM9331TR2PBF?

A: No. The IRFHM9331TR2PBF uses an 8-PowerTDFN (3x3 PQFN) package, while both substitute parts use PowerPAK® 1212-8 packaging. Although both are surface mount configurations with 8 pins, the physical footprints and pin layouts differ. PCB redesign is required for implementation.

Q: What are the key electrical differences between the substitute parts?

A: SI7121ADN-T1-GE3 provides 12A continuous drain current at ambient temperature, suitable for lower-current applications. SI7617DN-T1-GE3 provides 35A continuous drain current at case temperature, suitable for higher-current or thermally demanding applications. Both maintain 30V Vdss rating and compatible gate drive characteristics (Vgs(th) 2.5V, Qg 50-59 nC).

Q: Are the substitute parts compliant with current regulatory requirements?

A: Yes. Both SI7121ADN-T1-GE3 and SI7617DN-T1-GE3 are ROHS3 compliant and REACH unaffected. The original IRFHM9331TR2PBF is REACH unaffected but RoHS status is not specified.

Q: How do gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The original part specifies 48 nC at 10V, while substitutes specify 50 nC (SI7121ADN-T1-GE3) and 59 nC (SI7617DN-T1-GE3). These differences are within acceptable margins for most gate driver circuits designed for P-Channel MOSFETs in the 30V class.

Q: What is the significance of input capacitance (Ciss) in substitution?

A: Input capacitance affects gate drive circuit performance and switching speed. The original part specifies 1543 pF at 25V, while substitutes specify 1870 pF and 1800 pF at 15V. Higher capacitance may require slightly increased gate drive current but remains compatible with standard gate driver topologies.

Q: Which substitute part should be selected for new designs?

A: Selection depends on application current requirements. For applications requiring 11-12A continuous current, SI7121ADN-T1-GE3 is appropriate. For applications requiring higher current capacity or improved thermal performance, SI7617DN-T1-GE3 is appropriate. Both are active products with long-term availability.